A chemical-mechanical polishing fluid for barrier layer planarization and its application method
A chemical-mechanical and polishing liquid technology, used in polishing compositions containing abrasives, electrical components, circuits, etc., can solve problems such as chip corrosion, and achieve the effect of solving corrosion
Active Publication Date: 2019-02-15
宁波安集微电子科技有限公司
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Problems solved by technology
Solve the problem of chip corrosion when the polishing machine fails during the polishing process by using a combination of corrosion inhibitor and copper surface protectant
Method used
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[0026] Table 1 has provided comparison polishing liquid 1~4 and polishing liquid 1~13 of the present invention, by the formula given in the table, other components except oxidizing agent are mixed homogeneously, with KOH or HNO 3 Adjust to desired pH. Add oxidant before use and mix evenly. Water is the balance.
[0027] Table 1 contrasts polishing liquid 1~4 and polishing liquid 1~13 of the present invention
[0028]
[0029]
[0030]
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Abstract
The invention discloses a chemical mechanical polishing solution for barrier layer planarization. The polishing solution contains grinding particles, a corrosion inhibitor, a copper surface protection agent, a complexing agent, polyvinylpyrrolidone, an oxidant and water. The chemical mechanical polishing solution can meet requirements of the polishing rates and the selectivity ratios of all materials in a barrier layer polishing process, has very strong rectification ability on defects of the surface of a semiconductor device to rapidly realize planarization, can prevent local and integral corrosion generated in the metal polishing process, improves the work efficiency, and reduces the production cost.
Description
technical field [0001] The invention relates to a chemical mechanical polishing fluid for planarizing a barrier layer and a method for using the same. Background technique [0002] In the manufacture of integrated circuits, the standard of interconnection technology is improving. With the increase of the number of interconnection layers and the reduction of process feature size, the requirements for the flatness of the silicon wafer surface are getting higher and higher. If there is no planarization ability, The creation of complex and dense structures on semiconductor wafers is very limited, and the chemical mechanical polishing method CMP is the most effective method to achieve the planarization of the entire silicon wafer. [0003] The CMP process uses an abrasive mixture and a polishing pad to polish the surface of an integrated circuit. In a typical chemical mechanical polishing method, the substrate is placed in direct contact with a rotating polishing pad, and a load...
Claims
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IPC IPC(8): H01L21/321H01L21/3105C23F3/04C09G1/02
CPCC09G1/02C23F3/04H01L21/3105H01L21/321
Inventor 姚颖荆建芬邱腾飞蔡鑫元张建
Owner 宁波安集微电子科技有限公司