Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Resonators for Noise Reduction in Lithography Equipment

A technology of lithography equipment and resonator, which is applied in the direction of microlithography exposure equipment, photolithography exposure device, etc., and can solve the problems such as the huge influence of the internal world of the lithography machine

Active Publication Date: 2018-03-02
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The defect in the above-mentioned technical solution for noise elimination is that reverberation noise also has a huge impact on the internal world of the lithography machine, and there is no solution for this in the existing technical solution

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resonators for Noise Reduction in Lithography Equipment
  • Resonators for Noise Reduction in Lithography Equipment
  • Resonators for Noise Reduction in Lithography Equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] A resonator for lithography equipment according to a specific embodiment of the present invention will be described in detail below with reference to the accompanying drawings. However, the present invention should be understood as not limited to such embodiments described below, and the technical idea of ​​the present invention can be implemented in combination with other known technologies or other technologies having the same functions as those known technologies.

[0027]In the following description, in order to clearly show the structure and working method of the present invention, many directional words will be used to describe, but "front", "rear", "left", "right", "outer", "inner" should be used Words such as ", "outward", "inward", "upper" and "lower" are to be understood as convenient terms, and should not be understood as restrictive terms. In addition, the term "X direction" used in the following description mainly refers to the direction parallel to the hor...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a resonator for noise reduction of lithographic equipment, which comprises: an inner cavity and a nozzle connected to the inner cavity, the nozzle is composed of multi-layer materials, and the nozzle includes outer walls from outside to inside , air layer, sound-absorbing layer and perforated panels on the inner wall. The resonator provided by the invention can realize the adjustable resonant frequency, making it the same as the frequency of the noise source, so as to achieve the technical effect of effective sound absorption.

Description

technical field [0001] The invention relates to the field of integrated circuit equipment manufacturing, in particular to a resonator used for noise reduction of lithography equipment. Background technique [0002] A lithographic apparatus is a machine that applies a desired pattern to a substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). In this case, a patterning device, alternatively referred to as a mask or reticle, may be used to generate a circuit pattern corresponding to a single layer of the IC. The pattern can be imaged onto a target portion (eg, comprising a portion, one or more dies) on a substrate (eg, a silicon wafer). Pattern imaging is performed by imaging the pattern onto a layer of radiation sensitive material (resist) provided on the substrate. Typically, a single substrate will contain a network of adjacent target portions that are sequentially exposed. A conventional lithographic apparatus compri...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
Inventor 胡月钟亮王璟
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products