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An epitaxial growth method for adjusting substrate warpage

A technology of epitaxial growth and warpage, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems affecting the wavelength uniformity of light-emitting diodes, etc., to solve the problems of wavelength uniformity, temperature uniformity, and improvement of uniformity Effect

Active Publication Date: 2017-09-29
JIANGXI EPITOP OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides an epitaxial growth method for adjusting substrate warpage, which effectively controls the stress generated during heterogeneous epitaxy, so that the warpage of the epitaxial wafer is controlled within a certain range, and the uniformity of the wavelength is improved. Solve the technical problem in the prior art that the wavelength uniformity of light-emitting diodes is affected due to the increased warpage of the substrate

Method used

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  • An epitaxial growth method for adjusting substrate warpage
  • An epitaxial growth method for adjusting substrate warpage
  • An epitaxial growth method for adjusting substrate warpage

Examples

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Effect test

Embodiment A

[0040] 1. Put a sapphire (Patterned Sapphire Substrate, PSS for short) substrate with a bow of -3.5 into the reaction chamber, and control the N 2 :H 2 : NH 3 The flow ratio is 0:120:0 (ie H 2 The flow rate can be 120L / min), the pressure of the reaction chamber is 200 Torr, the control temperature is 1080°C, and the substrate is purified at high temperature for 300 seconds.

[0041] 2. Control the temperature to 530°C, N 2 :H 2 : NH 3 The flow rate ratio is 75:150:56, the pressure in the reaction chamber is 500 Torr, and the low-temperature Al with a thickness of 35nm is grown 0.2 Ga 0.98 In the N buffer layer, the molar content of the Al component is 20%.

[0042] 3. The control temperature is 1060°C, N2 :H 2 : NH 3 The flow rate ratio is 75:150:56, the pressure of the reaction chamber is 200 Torr, the growth rate is 2.2um / h, and the high-temperature undoped gallium nitride (U-GaN) lateral growth structure layer with a thickness of 1100nm is grown.

[0043] 4. The c...

Embodiment B

[0051] The Al component ratio of the buffer layer is set at 3%, the growth thickness of the lateral growth structure layer is 800nm, the pressure is 500 Torr, and the growth temperature is 980°C

[0052] 1. Put a sapphire substrate with a bow of +1.6 into the reaction chamber, N 2 :H 2 : NH 3 The flow ratio of the substrate is 0:120:0, the pressure of the reaction chamber is 200 Torr, and the control temperature is 1080°C. The substrate is purified at high temperature and stabilized for 300 seconds.

[0053] 2. The control temperature is 540°C, N 2 :H 2 : NH 3 The flow rate ratio is 75:150:56, the pressure in the reaction chamber is 500 Torr, and the low-temperature Al with a thickness of 40nm is grown. 0.03 Ga 0.97 In the N buffer layer, the molar content of the Al component is 3%.

[0054] 3. The control temperature is 980°C, N 2 :H 2 : NH 3 The flow rate ratio is 75:150:56, the pressure of the reaction chamber is 200 Torr, the growth rate is 2.5um / h, and the high-...

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Abstract

The invention provides an epitaxial growth method for adjusting warping degree of a substrate. The method includes: growing a buffer layer on the substrate; growing a transverse grown structural layer on the buffer layer; growing a non-doped gallium nitride layer on the transverse grown structural layer; growing an N-type doped layer on the non-doped gallium nitride layer; growing a quantum well light-emitting layer on the N-type doped layer; growing a P-type doped layer on the quantum well light-emitting layer. The method has the advantages that the warping degree of the substrate is effectively adjusted, wavelength uniformity is improved, and the technical problem that in the prior art, increase in the warping degree of the substrate affects the wavelength uniformity of an LED is solved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial growth method for adjusting substrate warpage. Background technique [0002] The general technique for growing gallium nitride (GaN)-based light-emitting diodes is to use heteroepitaxy, that is, to grow GaN epitaxial structure layers on sapphire substrates. [0003] At present, the GaN epitaxial structure layer is often grown at high temperature by Metal-organic Chemical Vapor Deposition (MOCVD) technology. In the process of growth, the warpage of the epitaxial wafer will be too large to directly affect the uniformity of the temperature at the bottom of the epitaxial wafer, and the deterioration of the temperature uniformity will directly affect the uniformity of the wavelength, while the wavelength of the light-emitting diode The uniformity of the wavelength is a key parameter of the product. The uniformity of the wavelength directly affects the sorting cost...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L33/0075H01L33/02H01L33/12
Inventor 焦建军黄小辉周德保康建梁旭东
Owner JIANGXI EPITOP OPTOELECTRONICS