Substrate processing apparatus and manufacturing method of semiconductor device
A substrate processing device and gas processing technology, which is applied in semiconductor/solid-state device manufacturing, coating, gaseous chemical plating, etc., can solve difficult problems and achieve the effect of less ion damage
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no. 1 approach ＞
[0035] Below, use figure 1 A substrate processing apparatus according to a first embodiment of the present invention will be described. figure 1 is a cross-sectional view of the substrate processing apparatus of this embodiment.
[0036] (1) Configuration of the substrate processing device
[0037] The processing device 100 of this embodiment will be described. The substrate processing device 100 is a device for forming a thin film, such as figure 1 As shown, it is configured as a single-sheet processing type substrate processing apparatus.
[0038] like figure 1 As shown, the substrate processing apparatus 100 includes a processing container 202 . The processing container 202 is configured, for example, as a closed container having a circular and flat cross section. In addition, the side wall and the bottom wall of the processing container 202 are made of metal materials such as aluminum (Al) and stainless steel (SUS), for example. In the processing container 202, a pr...
no. 2 approach ＞
[0168] Next, use Figure 7 The ion trap unit according to the second embodiment of the present invention will be described. The other configurations are the same as those of the first embodiment, so explanations are omitted. In the ion trapping unit of the second embodiment, a rod-shaped conductive member 403 is provided inside a pipe 403 . The rod-shaped conductive member 403 is grounded, and traps ions in the plasma passing through the pipe 401 .
[0169] A rod-shaped conductive member 403 for trapping ions protrudes from the center of the pipe 401 , so that ions in the plasma flowing in the center of the pipe 301 can be trapped. And, with Image 6 Compared with the above embodiment, since the area through which the gas passes is larger, the flow rate of the gas can be further increased.
no. 3 approach ＞
[0171] Next, use Figure 8 The ion trap unit according to the third embodiment of the present invention will be described. The other configurations are the same as those of the first embodiment, so explanations are omitted. Figure 8 (a) is a horizontal sectional view of the piping 401, Figure 8 (b) is a vertical cross-sectional view of the piping 401 . The ion trapping part of the third embodiment and Figure 7 Compared with the described ion trapping part, a rod-shaped conductive member 404 is further provided. The rod-shaped conductive member 403 is arranged so as to face the rod-shaped conductive member 404 in the horizontal direction, and is arranged at a position different from the rod-shaped conductive member 404 in the vertical direction.
[0172] The rod-shaped conductive member 403 traps ions in the plasma passing through the pipe 401 , and the conductive member 404 traps ions in the plasma flowing in a region away from the conductive member 403 .
[0173] In t...
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