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MEMS pressure sensor manufacturing method

A technology of microelectronic machinery and system pressure, which is applied in the direction of measuring fluid pressure through electromagnetic components, measuring fluid pressure, and manufacturing microstructure devices, etc. It can solve problems such as sacrificial layer cracking, affecting device performance and yield, etc.

Active Publication Date: 2017-03-15
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally, amorphous carbon is used as a sacrificial layer to form a cavity. Before the deposition of the sacrificial layer, the substrate has a height difference, so the sacrificial layer cracks after the deposition of the sacrificial layer, causing subsequent SiGe deposition to be embedded in the sacrificial layer cracked area, affecting Device performance and yield

Method used

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  • MEMS pressure sensor manufacturing method
  • MEMS pressure sensor manufacturing method
  • MEMS pressure sensor manufacturing method

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Embodiment Construction

[0029] An embodiment of the manufacturing method of the MEMS pressure sensor of the present invention includes:

[0030] Such as figure 1 Shown, step 1) carries out surface planarization to silicon substrate;

[0031] Such as figure 2 As shown, step 2) at the position of the pre-formed cavity, deposit amorphous carbon to form a sacrificial layer, and in N 2 Environment for thermal annealing, the annealing temperature is 350°C-450°C, preferably 420°C;

[0032] Such as image 3 As shown, step 3) adopt DARC (SiON+SiO 2 ) or SRO (silicon-rich oxide) deposition to form a protective layer;

[0033] Such as Figure 4 Shown, step 4) form contact hole to silicon substrate photolithography;

[0034] Such as Figure 5 As shown, step 5) deposit SiGe on the protective layer and the silicon substrate (including the contact hole);

[0035] Such as Image 6 As shown, step 6) SiGe etching forms a release hole, and the release hole will pass through the SiGe layer and the protective ...

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Abstract

The invention discloses a manufacturing method for a micro-electro-mechanical system pressure sensor. The method includes: conducting surface flattening on a silicon substrate; performing deposition to form a sacrificial layer; performing deposition to form a protective layer; carrying out photoetching to form contact holes; conducting SiGe deposition; performing SiGe etching to form release holes; and removing a sacrificial layer. The manufacturing method for the micro-electro-mechanical system pressure sensor provided by the invention can avoid embedding of SiGe deposit into a sacrificial layer cracking area caused by sacrificial layer cracking, and improves the device performance and product yield.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a micro-electro-mechanical system (MEMS, Micro-Electro-Mechanical System) pressure sensor. Background technique [0002] MEMS (micro-electro-mechanical systems) pressure sensors can be mass-produced with high precision and low cost using similar integrated circuit (IC) design techniques and manufacturing processes, so that MEMS can be used in large quantities at low cost for consumer electronics and industrial process control products Sensors open the door to easy and intelligent pressure control. [0003] The traditional mechanical quantity pressure sensor is based on the deformation of the metal elastic body under force, from the elastic deformation of the mechanical quantity to the power conversion output, so it cannot be as small as an IC like the MEMS pressure sensor, and the cost is much higher than that of the MEMS pressure sensor. . Compared with traditional m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00G01L1/00G01L9/00G01L23/08
Inventor 曹苗苗冯凯季伟
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP