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A trench type vdmos manufacturing method and a trench type vdmos

A manufacturing method and groove-type technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as burnout and overheating, achieve strong practicability, optimize device structure, and improve the effects of burnout phenomena

Active Publication Date: 2017-11-21
FOUNDER MICROELECTRONICS INT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention provides a trench type VDMOS manufacturing method and a trench type VDMOS, in order to solve the technical problem in the prior art that it is easy to burn out due to local overheating when a large current passes through

Method used

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  • A trench type vdmos manufacturing method and a trench type vdmos

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Embodiment Construction

[0049] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0050] Embodiments of the present invention firstly propose a trench type VDMOS manufacturing method, see figure 2 shown, including:

[0051] Step 201: On the substrate of the first conductivity type, form a first conductivity type epitaxial layer including a low resistance region, the low resistance region is located inside the first conductivi...

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Abstract

The invention provides a trench-type VDMOS manufacturing method and a trench-type VDMOS. The method comprises steps: on a substrate of a first conductive type, an epitaxial layer of the first conductive type comprising a low resistance region is formed, wherein the low resistance region is located in the inner part of the epitaxial layer of the first conductive type and parallel to the substrate of the first conductive type; a gate is formed on the epitaxial layer of the first conductive type, wherein the bottom part of the gate is located at the bottom part of the low resistance region; a body region of a second conductive type and a source region of the first conductive type are formed on the epitaxial layer of the first conductive type, wherein the second conductive type is opposite to the first conductive type, and the bottom part of the body region of the second conductive type is located at the top part of the low resistance region; a dielectric layer and a source metal layer are formed on the surface of the epitaxial layer of the first conductive type, and a drain metal layer is formed on the back face of the substrate of the first conductive type. The device structure is optimized, current passing through the device is uniformly distributed, and the burnt down phenomenon due to local overheating caused by large current is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing technology, in particular to a trench type VDMOS manufacturing method and a trench type VDMOS. Background technique [0002] Vertical Double Diffused Metal-Oxide Semiconductor Field-Effect Transistor (VDMOS) combines the advantages of bipolar transistors and ordinary Metal-Oxide Semiconductor Field-Effect Transistor (MOS) devices, whether it is switching applications or linear applications, VDMOS is ideal for power device. VDMOS is mainly used in motor speed regulation, inverter, uninterruptible power supply, electronic switch, high-fidelity audio, automotive electrical appliances and electronic ballast, etc. [0003] In a trench VDMOS device, due to the effect of the trench, when the device is turned on, the gate voltage makes the polysilicon band in the trench positively pressurized, attracting a large number of electrons around the trench, making the resistivity of the area near the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/78H01L29/06
CPCH01L29/06H01L29/66712H01L29/7802
Inventor 马万里
Owner FOUNDER MICROELECTRONICS INT
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