Rapid-heating-assisted ultrasonic stripping method for two-dimensional nanometer Ti3C2 lamella

A two-dimensional nano-ultrasonic peeling technology, which is applied in the direction of nanotechnology, can solve the problem of poor peeling effect of sheets

Inactive Publication Date: 2015-08-05
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention is to solve the existing method of stripping two-dimensional nano-Ti 3 C 2 The problem of poor peeling effect of the sheet provides a rapid heating-assisted ultrasonic peeling of two-dimensional nano-Ti 3 C 2 lamellar approach

Method used

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  • Rapid-heating-assisted ultrasonic stripping method for two-dimensional nanometer Ti3C2 lamella
  • Rapid-heating-assisted ultrasonic stripping method for two-dimensional nanometer Ti3C2 lamella

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specific Embodiment approach 1

[0016] Specific embodiment 1: In this embodiment, a rapid heating-assisted ultrasonic exfoliation of two-dimensional nano-Ti 3 C 2 The layer-by-layer method is accomplished in the following steps:

[0017] 1. After mixing Ti, Al, and C powders in a molar ratio of 3:(1~1.1):2, they are subjected to pressureless sintering at 1400°C to 1500°C to obtain Ti 3 AlC 2 phase ceramics, and then crush it through 400 mesh to obtain Ti 3 AlC 2 powder;

[0018] Second, the Ti 3 AlC 2 The powder is corroded in hydrofluoric acid with a concentration of 20wt.% to 50wt.% for 4 to 24 hours, and then added to deionized water for centrifugation to remove the liquid phase, and then dry the solid phase to obtain stacked lamellar Ti 3 C 2 T x Powder;

[0019] 3. The layered Ti layer that will be stacked 3 C 2 T x Put the powder into a quartz glass tube, close the tube mouth after vacuuming, and then immediately put it into a heat treatment furnace at a constant temperature of 600-1200 ° ...

specific Embodiment approach 2

[0026] Embodiment 2: This embodiment differs from Embodiment 1 in that: the speed of centrifugation in step 2 is 3500 r / min. Other steps and parameters are the same as those in the first embodiment.

specific Embodiment approach 3

[0027] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the drying described in step 2 refers to drying at 30-80° C. for 12 hours. Other steps and parameters are the same as those in Embodiment 1 or 2.

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Abstract

The invention discloses a rapid-heating-assisted ultrasonic stripping method for a two-dimensional nanometer Ti3C2 lamella, relates to a method for stripping a two-dimensional nanometer Ti3C2 lamella, and aims at solving the problem of poor stripping effect of the existing method for stripping the two-dimensional nanometer Ti3C2 lamella. The method comprises the steps of firstly, preparing Ti3AlC2 powder; secondly, preparing stacked lamellar Ti3C2Tx powder, and then, immediately placing the stacked lamellar Ti3C2Tx powder into a thermal treatment furnace after vacuumizing; then, adding the powder in a pipe into an organic solvent after cooling, and centrifuging after stirring to obtain a solid substance; and vibrating and dispersing after adding deionized water into the solid substance, filtering to obtain a powdery sample, and drying to obtain the two-dimensional nanometer Ti3C2 lamella. The ratio of single-layer or n-layer nano lamellas in the two-dimensional nanometer Ti3C2 lamella stripped by using the method disclosed by the invention is relatively high (n<10). The rapid-heating-assisted ultrasonic stripping method for the two-dimensional nanometer Ti3C2 lamella is applied to the fields of synthesis and preparation of nano ceramic materials.

Description

technical field [0001] The invention relates to a two-dimensional nano Ti 3 C 2 slice method. Background technique [0002] Two-dimensional material Ti 3 C 2 It is more stable than graphene. to Ti 3 C 2 The first-principle calculations carried out show that it has a high elastic modulus when stretched along its base plane, the bending strength is higher than that of graphene with the same thickness, and the near-Fermi energy density is its precursor MAX phase (Ti 3 AlC 2 ) 2.5 to 4.5 times. The MAX phase was treated with etchant such as HF to obtain MXene with functional groups such as F, OH, and O, and the presence of these functional groups would change the electronic properties of MXene. Theoretical calculations show that Ti with F and OH functional groups 3 C 2 It exhibits obvious semiconducting properties, and MXene-based materials with magnetic properties can be obtained by proper surface modification and controlling the type and degree of modified functiona...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/30B82Y40/00
Inventor 段小明孙亚建贾德昌刘博慧周玉
Owner HARBIN INST OF TECH
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