A temperature-controllable heating plate with snowflake-shaped surface structure
A surface structure and heating plate technology, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as the inability to quickly and accurately control the wafer temperature, achieve the effect of enhancing heat conduction efficiency and improving yield
Active Publication Date: 2018-06-26
PIOTECH CO LTD
View PDF7 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] The purpose of the present invention is to solve the above problems, and mainly solve the problem that the existing heating plate and electrostatic chuck cannot quickly and accurately control the wafer temperature
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment
[0013] Such as figure 1 As shown, a temperature-controllable heating plate with a snowflake-shaped surface structure includes a heating plate 4 with a central air inlet 1 . The edge of the heating plate 4 is provided with a gas recovery hole 3; the surface of the heating plate 4 is formed with a gas flow groove 2 along a snowflake-shaped layout; the width of the gas flow groove 2 gradually becomes smaller from the center. The heat transfer medium flows from the center to the edge region of the heating plate 4 through a plurality of radial grooves. During the flow of the heat transfer medium, the flow rate will be reduced due to pressure loss, which will reduce the heat transfer efficiency. The gradual change in the width of the gas flow groove 2 in the structure makes the flow and conduction between the heat-conducting media smoother, strengthens the temperature unevenness caused by the flow loss, and accurately controls the wafer temperature. The gas will eventually return ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a temperature-controllable heating plate with snowflake-shaped surface structure, mainly solves the problem that an existing heating plate and static chuck fail to rapidly and accurately control the temperature of a wafer. The heating plate provided with a central gas inlet is provided. The edge of the heating plate is provided with gas recovery holes. Gas flowing grooves arranged in a snowflake shape are arranged on the surface of the heating plate. The widths of the gas flowing grooves are gradually reduced from the center. By adopting the grooves with the snowflake-shaped surface structure, certain gas gap space is formed between the heating plate and a wafer, and a heat-conducting medium relatively high in heat conduction coefficient is introduced into the gas gap space to enhance the heat conduction efficiency under a vacuum environment. Through the reasonable plate surface structure design, the heat-conducting medium can rapidly and uniformly flow in gaps, and heat exchange between the heating plate and the wafer is realized. The temperature-controllable heating plate with the snowflake-shaped surface structure can be widely applied to the technical field of semiconductor film deposition application.
Description
technical field [0001] The invention relates to a disk surface structure of a temperature-controllable heating disk applied to semiconductor deposition equipment. Use snowflake-shaped disk gas distribution to achieve precise control of wafer temperature. The invention belongs to the technical field of semiconductor thin film deposition application and manufacture. Background technique [0002] Semiconductor equipment often needs to preheat the wafer and chamber space or maintain the temperature required for the deposition reaction during the deposition reaction. Most semiconductor deposition equipment uses heating plates or electrostatic chucks to achieve the purpose of preheating the wafer. However, because the deposition reaction is mostly carried out under vacuum conditions, the vacuum environment has poor thermal conductivity due to the lack of heat-conducting media. It is often not possible to preheat the wafer to the required temperature quickly, or to preheat the wa...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67
CPCH01L21/67011
Inventor 陈英男姜崴郑旭东关帅
Owner PIOTECH CO LTD