Semiconductor device defect detection method

Abstract

The invention provides a semiconductor device defect detection method comprising the following steps: growing a metal layer on a substrate surface having an oxide layer, wherein the metal layer is positioned above the oxide layer; coating photoresist on the surface of the metal layer so as to form a protection layer aiming at a non-defect zone in the metal layer; carrying out metal layer etching and oxide layer etching on the substrate with the photoresist; removing the photoresist on the surface of the substrate; etching the metal layer off; detecting whether the oxide layer has defect or not so as to determine the semiconductor device has defect or not. The method can conveniently detect pin hole defects in the semiconductor device, thus ensuring the life and reliability of the semiconductor device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for detecting defects of semiconductor devices. Background technique [0002] IC (Integrated Circuit, integrated circuit) detection and analysis methods in the semiconductor industry mainly include OM (Optical Microscopy, optical microscope), SEM (Scanning electron microscopy, scanning electron microscope), slitting and dyeing, RIE etching (Reactive Ion Microscopy) Etching, reactive ion etching), CMP (Chemical Mechanical Polishing, chemical mechanical planarization), wet etching, EMMI (Emission Microscope, low-light microscope), elemental composition analysis, etc. For the defects of environmental particles and foreign objects, KLA scanning can also be performed (KLA equipment is a kind of surface defect detection equipment). KLA equipment is an instrument for inspection and analysis of semiconductor surface defects. The signals collected by the sensor can quickl...

AI Technical Summary

Problems solved by technology

At the same time, because the metal layer is light in color and has high reflectivity, it is difficult to detect defects directly on the metal layer by means of conventional microscope inspection and KLA scanning.

However, the existence of such defects will affect the life and reliability of the product, which is a difficult problem that must be solved in the actual product manufacturing process.

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