Vertical-structure LED chip manufacturing method
A LED chip and vertical structure technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of N-type gallium nitride surface roughness, difficulty in controlling the etching depth, uneven energy, etc., to solve the problem of uneven etching depth The effect of solving the problem of uneven energy, solving the problem of energy unevenness, and reducing the damage of internal stress
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[0035] The preparation method of the vertical structure LED chip of the present invention mainly includes the following links:
[0036] (1) Isolation groove etching: The epitaxial wafer is put into the ICP etching equipment for isolating groove etching. In addition, the epitaxial wafer can be a flat wafer, PSS epitaxial wafer, secondary etched epitaxial wafer, and epitaxial wafers prepared by other methods. The etching depth is from the epitaxial wafer surface to the sapphire substrate Al 2 O 3 On the surface, use silicon oxide and photoresist to mask the area outside the isolation trench during etching, and use hot acid H after etching 2 SO 4 : H 3 PO 4 =3:1 solution 200~250℃ soak for 3~5min to form a chip isolation tank.
[0037] (2) N electrode etching and mirror evaporation: use ICP etching technology for traditional N electrode etching; use electron beam evaporation machine for mirror evaporation (Ni / Ag or Ni / Al), evaporation The edge of the covered area of the plated mirror...
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