A method for preparing nitrogen-doped graphene by combustion synthesis
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HARBIN INST OF TECH
- Publication Date
- 2017-05-31
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of carbon materials, and relates to a method for preparing nitrogen-doped graphene. Background technique
[0002] Graphene is a new type of carbon material with a single-layer sheet structure composed of carbon atoms. It has excellent physical, chemical and mechanical properties, and is widely used in chemical power sources, optoelectronic devices and heterogeneous catalysis.
[0003] However, since graphene has no energy band gap, its conductivity cannot be fully controlled like traditional semiconductors, and graphene is smooth and inert, which is not conducive to the recombination with other materials, thus hindering the application of graphene. Doping graphene with nitrogen can open the energy band gap and adjust the conductivity type, change the electronic structure of graphene, increase the free carrier density of graphene, and thus regulate the performance of graphene.
[0004] At present, many studi...