A method for improving p-type conductivity of boron-doped nanodiamond film
A nano-diamond, conductive performance technology, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problem that the electrical properties of boron-doped nano-diamond film have not been reported, and achieve carrier concentration and Effects of increased mobility, simple method, and ease of operation
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Embodiment 1
[0025] Polish the monocrystalline silicon wafer with nano-scale diamond powder, and the grinding time is about half an hour. Polished silicon wafers were ultrasonically cleaned with deionized water and acetone in turn, dried, and used as substrates for the growth of nano-diamond films. The hot wire chemical vapor deposition method (chemical vapor deposition equipment was purchased from Shanghai Jiaoyou Diamond Coating Co., Ltd., model JUHF CVD001) was used, with acetone dissolved in dimethyl borate as the carbon source, and the acetone was brought into the surface by hydrogen bubbling. In the reaction chamber, the concentration of boron in acetone is 1060ppm, the temperature of the reaction chamber is controlled at 600-700° C., the preparation time is 5 hours, and a boron-doped nano-diamond film with a thickness of 3 μm is prepared.
[0026] figure 1 It is a field emission scanning electron microscope (FESEM) photo of a boron-doped nano-diamond film with a boron doping concen...
Embodiment 2
[0030] Polish the monocrystalline silicon wafer with nano-scale diamond powder, and the grinding time is about half an hour. Polished silicon wafers were ultrasonically cleaned with deionized water and acetone in turn, dried, and used as substrates for the growth of nano-diamond films. The hot wire chemical vapor deposition method (chemical vapor deposition equipment was purchased from Shanghai Jiaoyou Diamond Coating Co., Ltd., model JUHF CVD001) was used, with acetone dissolved in dimethyl borate as the carbon source, and the acetone was brought into the surface by hydrogen bubbling. In the reaction chamber, the concentration of boron in acetone is 4250ppm, the temperature of the reaction chamber is controlled at 600-700° C., the preparation time is 5 hours, and a boron-doped nano-diamond film with a thickness of 3 μm is prepared. The surface morphology of the film was observed by field emission scanning electron microscopy, and the microstructure of the film was observed by...
Embodiment 3
[0034] Polish the monocrystalline silicon wafer with nano-scale diamond powder, and the grinding time is about half an hour. Polished silicon wafers were ultrasonically cleaned with deionized water and acetone in turn, dried, and used as substrates for the growth of nano-diamond films. Using hot wire chemical vapor deposition (chemical vapor deposition equipment purchased from Shanghai Jiaoyou Diamond Coating Co., Ltd.), using acetone dissolved in dimethyl borate as a carbon source, acetone is brought into the reaction chamber by hydrogen bubbling. The concentration of boron in acetone is 1060ppm, the temperature of the reaction chamber is controlled at 600-700° C., the preparation time is 5 hours, and a nano-diamond film with a thickness of 3 μm is prepared.
[0035] The above-mentioned boron-doped nano-diamond film was incubated in the air at 600°C for 15 minutes, and the Raman spectrum with a wavelength of 514nm was used to analyze the composition of the film, as shown in ...
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