LDMOS device and manufacturing method thereof

Abstract

This invention provides an LDMOS device and a manufacturing method thereof. The LDMOS device comprises a semiconductor substrate, a body region and a drift region arranged in the semiconductor substrate, a gate arranged on the semiconductor substrate and a drain electrode arranged in the drift region, and the drift region also comprises a drift blocking part which blocks drift region hot carrier drift. According to the LDMOS device and the manufacturing method, the drift of a hot carrier to a gate direction can be blocked by the drift blocking part arranged at the drift region, the electric field intensity under the gate can be reduced, the position of strongest electric field generation moves downward to be far from the gate oxide layer of the gate. The electric field intensity is reduced, the breakdown voltage of the drift region is raised, and the generation of impact ionization is reduced, which means that the number of hot carrier generation is reduced. Since the position of the strongest electric field moves downward, the distance to the gate oxide layer is increased, the number of the hot carriers which act on the gate oxide layer actually is reduced, thus the effect of blocking the hot carriers is realized finally, and the reliability of the device is improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular, to an LDMOS device and a manufacturing method thereof. Background technique [0002] With the development of science and technology, the types of electronic products are increasing day by day, and the integration degree of integrated circuits of electronic products is also getting higher and higher. Among them, laterally diffused metal oxide transistor (LDMOS) devices have been developing towards high gain and high efficiency. With the reduction of gate oxide thickness, junction depth, and channel length, devices will inevitably produce high In the electric field area, the electric field strength in the MOSFET channel increases, and the carriers in the channel will obtain high energy under the action of this strong electric field. These high-energy carriers are called "hot carriers". The hot carriers hit the lattice atoms, and impact ionization oc...

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Problems solved by technology

[0004] The purpose of this application is to provide an LDMOS device and its manufacturing method to solve the problem in the prior art that the hot carrier effect seriously causes the breakdown of the gate oxide layer of the device

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