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Bix (Bi0.5Na0.4K0.1) 1-xTi1-xMexO3 lead-free antiferroelectric high energy density ceramic and preparation method thereof

A high energy storage density, antiferroelectric technology, applied in the field of energy storage ceramic capacitor manufacturing, can solve the problems of low energy storage density, low electric field strength, etc., and achieve the effect of high energy storage density and simple preparation method

Inactive Publication Date: 2015-09-09
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to its high P r value and withstand relatively low electric field strength, making its energy storage density low

Method used

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  • Bix (Bi0.5Na0.4K0.1) 1-xTi1-xMexO3 lead-free antiferroelectric high energy density ceramic and preparation method thereof
  • Bix (Bi0.5Na0.4K0.1) 1-xTi1-xMexO3 lead-free antiferroelectric high energy density ceramic and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] 1) Bi was synthesized using traditional powder synthesis technology x (Bi 0.5 Na 0.4 K 0.1 ) 1-x Ti 1-x Me x o 3 Powder: choose Bi with high purity (≧99.8%) 2 o 3 、Na 2 CO 3 、K 2 CO 3 , MeO y (metal oxide), TiO 2 Powder as raw material, according to Bi 2 o 3 : Na 2 CO 3 :K 2 CO 3 : MeO y (Metal oxide): TiO 2 =(0.25+0.25x):(0.2-0.2x):(0.05-0.05x):x:(1-x) molar ratio mixed, then fully mixed in a high-energy ball mill, taken out and dried;

[0021] 2) Grinding, heat preservation at 900-950°C for 2-4 hours to synthesize Bi x (Bi 0.5 Na 0.4 K 0.1 ) 1-x Ti 1-x Me x o 3 Powder;

[0022] 3) Add PVA to the powder obtained in (2) and press it into a disc green body, then raise the temperature of the disc green body to 1050°C without heat preservation, directly lower it to 950°C and keep it warm for 12 hours, then naturally cool to obtain Bi x (Bi 0.5 Na 0.4 K 0.1 ) 1-x Ti 1-x Me x o 3 Lead-free antiferroelectric high energy storage density ce...

Embodiment 2

[0025] 1) Bi was synthesized using traditional powder synthesis technology x (Bi 0.5 Na 0.4 K 0.1 ) 1-x Ti 1-x Me x o 3 Powder: choose Bi with high purity (≧99.8%) 2 o 3 、Na 2 CO 3 、K 2 CO 3 , MeO y (metal oxide), TiO 2 Powder as raw material, according to Bi 2 o 3 : Na 2 CO 3 :K2 CO 3 : MeO y (Metal oxide): TiO 2 =(0.25+0.25x):(0.2-0.2x):(0.05-0.05x):x:(1-x) molar ratio mixed, then fully mixed in a high-energy ball mill, taken out and dried.

[0026] 2) Grinding, heat preservation at 900-950°C for 2-4 hours to synthesize Bi x (Bi 0.5 Na 0.4 K 0.1 ) 1-x Ti 1-x Me x o 3 Powder.

[0027] 3) Add PVA to the powder obtained in (2) and press it into a disc green body, then raise the temperature of the disc green body to 1050°C without heat preservation, directly lower it to 950°C and keep it warm for 48 hours, then naturally cool to obtain Bi x (Bi 0.5 Na 0.4 K 0.1 ) 1-x Ti 1-x Me x o 3 Lead-free antiferroelectric high energy storage density cera...

Embodiment 3

[0030] (1) Synthesize Bi by traditional powder synthesis technology 0.63 Na 0.296 K 0.074 Ti 0.87 Zn 0.13 o 3 Powder: choose Bi with high purity (≧99.8%) 2 o 3 、Na 2 CO 3 、K 2 CO 3 , ZnO, TiO 2 Powder as raw material, according to Bi 2 o 3 : Na 2 CO 3 :K 2 CO 3 :ZnO:TiO 2 = 0.315: 0.148: 0.037: 0.13: 0.87 molar ratio mixed, then fully mixed in a high-energy ball mill, taken out and dried,

[0031] (2) Grinding and incubating at 900°C for 2 hours to synthesize Bi 0.63 Na 0.296 K 0.074 Ti 0.87 Zn 0.13 o 3 Powder.

[0032] (3) Add PVA to the powder obtained in (2) and press it into a disc green body, then raise the temperature of the disc green body to 1050°C without heat preservation, directly lower it to 950°C and keep it warm for 48 hours, and then naturally cool it to get Bi 0.63 Na 0.296 K 0.074 Ti 0.87 Zn 0.13 o 3 Lead-free antiferroelectric high energy storage density ceramics.

[0033] Performance test results: energy storage density is abo...

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Abstract

The invention relates to a Bix (Bi0.5Na0.4K0.1) 1-xTi1-xMexO3 lead-free antiferroelectric high energy density ceramic and a preparation method thereof. Me is one of Al<3+>, Co<3+>, Cr<3+>, (Zn0.5Ti0.5) <3+>, (Mg0.5Ti0.5) <3+>, (Ni0.5Ti0.5) <3+>, and x satisfies the relation of 0.1<=x<=0.3. First a conventional synthesis technology is used to synthesize a Bix (Bi0.5Na0.4K0.1)1-x Ti1-xMexO3 powder; then a two-step technology is used to prepare Bix(Bi0.5Na0.4K0.1) 1-x Ti1-x MexO3 lead-free antiferroelectric high energy density ceramic. The high energy density ceramic prepared by the invention has energy density of 0.7-1.8 J / cm<3>, and the energy density is adjustable based on component and technology.

Description

technical field [0001] The invention belongs to the field of energy storage ceramic capacitor manufacturing, in particular to Bi x (Bi 0.5 Na 0.4 K 0.1 ) 1-x Ti 1-x Me x o 3 Lead-free antiferroelectric high energy storage density ceramics and a preparation method thereof. Background technique [0002] Capacitors with high energy storage density have been developed for more than 50 years and have become the ultimate weapon in the military field due to their instantaneous pulse capability. For example, missile defense systems and warship protection systems all need to use directional high-energy lasers. However, driving such high-power lasers requires a high-power pulse power system. The use of a drive medium with a low density of the energy storage film will result in a larger volume and tonnage, which is not conducive to the invisibility of the military system, making it an easy target for attack. In order to meet the needs of lightweight, miniaturized and highly in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/462C04B35/622
Inventor 袁昌来周星星冯琴刘笑周昌荣杨涛许积文黎清宁陈国华
Owner GUILIN UNIV OF ELECTRONIC TECH