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Contact Silicide Having a Non-Angular Profile

A technology of silicide and metal silicide, which is used in the manufacture of electrical components, semiconductor devices, semiconductor/solid-state devices, etc.

Inactive Publication Date: 2015-09-16
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thus, although existing methods of fabricating semiconductor devices are generally adequate for their intended purposes, they are not fully satisfactory in every respect

Method used

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  • Contact Silicide Having a Non-Angular Profile
  • Contact Silicide Having a Non-Angular Profile
  • Contact Silicide Having a Non-Angular Profile

Examples

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Embodiment Construction

[0032] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are formed in direct contact, and may also include that additional components may be formed on the first component and the second component. Between the second part, such that the first part and the second part are not in direct contact. Furthermore, the present invention may repeat reference numerals and / or letters in various instances. This repetition is for simplicity and clarity and does not in itself imply a relationship between the various embodiments and / or configura...

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Abstract

A semiconductor device includes a transistor having a source / drain region. A conductive contact is disposed over the source / drain region. A silicide element is disposed below the conductive contact. The silicide element has a non-angular cross-sectional profile. In some embodiments, the silicide element may have an approximately curved cross-sectional profile, for example an ellipse-like profile. The silicide element is formed at least in part by forming an amorphous region in the source / drain region via an implantation process. The implantation process may be a cold implantation process.

Description

[0001] Priority Claims and Cross References [0002] This application is related to U.S. Patent Application No. ___ (Attorney Docket No.: TSMC2013-1662 / 24061.2762) entitled "Contact Silicide Formation Using a Spike Annealing Process" filed on _Month_, 2014, the entire contents of which incorporated herein by reference. technical field [0003] The present invention generally relates to the field of semiconductor technology, and more particularly, to a semiconductor device and a manufacturing method thereof. Background technique [0004] The semiconductor integrated circuit (IC) industry has experienced rapid development. Technological advances in IC materials and design have produced generations of ICs, where each generation has smaller and more complex circuits than the previous generation. However, these advances have increased the complexity of handling and manufacturing ICs, and similar developments in IC processing and manufacturing processes are required to achieve t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/417H01L21/336H01L21/28
CPCH01L29/66568H01L29/456H01L29/41725H01L21/28568H01L21/324H01L21/28518H01L29/16H01L21/26593H01L29/78H01L21/32133H01L21/26506H01L21/76814H01L21/76843H01L21/76855H01L29/66575H01L29/7833
Inventor 陈圣文施侑伸罗加聘林彦华谭伦光林钰庭
Owner TAIWAN SEMICON MFG CO LTD