Inverted structure of III conductor light-emitting device

Abstract

The invention discloses an inverted structure of an III conductor light-emitting device. The inverted structure comprises a substrate, a buffer layer, an N-type nitride semiconductor layer, an active layer, a P-type nitride semiconductor layer, a transparent conductive layer, a first insulating layer structure, P-type contact metal, N-type contact metal, a second insulating layer structure, an inverted P-type electrode and an inverted N-type electrode. The substrate, the buffer layer, the N-type nitride semiconductor layer, the active layer and the P-type nitride semiconductor layer arranged in order from top to bottom form a linear raised top. The linear raised top replaces the prior multiple vias; the first insulating layer structure, using a Bragg reflector layer-metal layer-single oxide insulating layer or a Bragg reflector layer-metal layer-multiple oxide insulating layers as a reflector structure and insulating layer, replaces the inverted reflector structure and first insulating layer; a metal protective layer can be omitted.

Description

technical field [0001] The present application relates to the technical field of semiconductor lighting, and specifically relates to a flip-chip structure of a Group III semiconductor light emitting device. Background technique [0002] Traditional light-emitting diodes adopt a front-mount structure. Generally, the transparent conductive layer is made of high-transmittance materials, such as ITO, AZO, etc., and the electrodes are generally made of Cr / Pt / Au, etc. However, in the flip-chip structure, the light excited by the active layer It is directly emitted from the substrate on the other side of the electrode, so the requirement for the P-type electrode is changed to a highly reflective material covering the entire p-type nitride semiconductor layer as a mirror structure. The first is on the p-type nitride semiconductor layer Plating a transparent electrode with high transmittance plus high reflective metal, such as ITO / Ag, etc., the other is to directly coat a high reflec...

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Problems solved by technology

[0002] Traditional light-emitting diodes adopt a front-mount structure. Generally, the transparent conductive layer is made of high-transmittance materials, such as ITO, AZO, etc., and the electrodes are generally made of Cr / Pt / Au, etc. However, in the flip-chip structure, the light excited by the active layer It is directly emitted from the substrate on the other side of the electrode, so the requirement for the P-type electrode is changed to a highly reflective material covering the entire p-type nitride semiconductor layer as a mirror structure. The first is on the p-type nitride semiconductor layer Plating a transparent electrode with high transmittance plus high reflective metal, such as ITO / Ag, etc., the other is to directly coat a high reflective metal on the p-type nitride semiconductor layer as an ohmic contact layer and a mirror, For example, Ag, Al, etc., no matter which method is selected, a metal protective layer (guard metal) must be used later to cover the highly reflective material to avoid instability, and then etch multiple holes (vias). The schematic diagram of the structure is as follows figure 1 , the entire surface is covered with the first insulating layer, the n-type nitride semiconductor layer and the metal protection layer are opened to access the n-type nitride semiconductor layer and the metal protection layer, and then the P-type contact metal and the N-type contact metal are plated, and the entire surface is covered with the second insulating layer, and the hole is accessed to access the P Type contact metal and N-type contact metal, and finally flip-chip P-type electrodes and N-type electrodes are plated. Due to the relatively high precision of etching holes, the process is complicated and the production cost is also high.

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