Carrier gas flow controllable single crystal furnace prepared by adopting PVT method for single crystal

Abstract

The invention relates to a carrier gas flow field controllable single crystal furnace prepared by adopting a PVT method for a single crystal. A quartz filter screen is added between seed crystals in a growth pipe and a temperature region of a raw material region, the quartz filter screen is a quartz product, the diameter of the quartz filter screen is the same with the inner diameter of the growth pipe, the quartz filter screen and the growth pipe fit tightly, and the quartz filter screen is 5-30mm long. The quartz filter screen is internally provided with closely arranged, connective and winding channels, and maximum calibre of the channels is 0.5-3mm. The carrier gas flow field controllable single crystal furnace prepared by adopting the PVT method for the single crystal has the beneficial effects that uniformity of a carrier gas flow is controlled, environmental stability on the crystal growth surface is improved, crystal growth process repeatability and crystal growth quality can be beneficially improved, and crystal yield can be obviously increased.

Description

technical field [0001] The invention relates to a single crystal furnace for preparing a single crystal by a PVT method, in particular to a single crystal furnace for preparing a single crystal by a PVT method which can control a carrier gas field. Background technique [0002] In the process of preparing single crystal by PVT method, the growth raw material is placed in the high-temperature sublimation zone. After being heated, the raw material is transported in gaseous form along the temperature gradient to the low-temperature zone, and desublimated on the surface of the lower temperature seed crystal. PVT method The process of growing a single crystal is a material transfer process. By adjusting the temperature field distribution of the single crystal furnace, the growth pressure, the flow rate of the carrier gas, and the process control structure and other process parameters, high-quality single crystal materials can be prepared. For the traditional PVT method to prepare ...

AI Technical Summary

Problems solved by technology

[0002] In the process of preparing single crystal by PVT method, the growth raw material is placed in the high-temperature sublimation zone. After being heated, the raw material is transported in gaseous form along the temperature gradient to the low-temperature zone, and desublimated on the surface of the lower temperature seed crystal. PVT method The process of growing single crystal is a material transfer process. By adjusting the temperature field distribution of single crystal furnace, growth pressure, carrier gas flow rate, and process control structure and other process parameters, high-quality single crystal materials can be prepared. For the traditional PVT method to prepare single crystal During the process, it is difficult to control the uniformity of the carrier gas flow, so that the gaseous raw materials will form turbulence and other unstable phenomena during the transmission process, which will affect the stability of the crystal growth surface environment, resulting in poor repeatability of the crystal growth process and affecting the quality of the crystal. Yield reduction

Images