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Device for directly doubling frequency of locking mold photonic crystal semiconductor laser to generate low wave length laser

A photonic crystal and laser direct technology, applied in the direction of lasers, phonon exciters, laser components, etc., can solve the problems of difficult epitaxy, low efficiency and reliability, etc., and achieve the effect of simple preparation process, compact structure and improved efficiency

Inactive Publication Date: 2015-10-07
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, different semiconductor epitaxy materials can be used to directly generate short wavelengths (such as red, green, blue, etc.). Low-level shortcomings, technology is mainly in the hands of a few companies

Method used

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  • Device for directly doubling frequency of locking mold photonic crystal semiconductor laser to generate low wave length laser
  • Device for directly doubling frequency of locking mold photonic crystal semiconductor laser to generate low wave length laser
  • Device for directly doubling frequency of locking mold photonic crystal semiconductor laser to generate low wave length laser

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Embodiment 1

[0041] figure 1 Schematic diagram of the geometric structure of the device for direct frequency doubling of mode-locked photonic crystal semiconductor lasers to generate short-wavelength lasers. The device includes a mode-locked photonic crystal semiconductor laser and a frequency doubling crystal. The structure of the mode-locked photonic crystal semiconductor laser is as follows figure 2 As shown, the lasing wavelength is 1.06 μm, and the width of the ridge structure is 20 μm. The photonic crystal contains 16 pairs of alternately grown Al x Ga 1-x As / Al y Ga 1-y As layer, the total thickness is close to 25 μm. image 3 It shows that the far-field distribution in the direction of the fast axis of the output fundamental frequency light is a Gaussian distribution, and its full width at half maximum is 3 degrees. Figure 4 It shows that the far-field distribution in the direction of the slow axis of the output fundamental frequency light is also Gaussian distribution, an...

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PUM

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Abstract

The invention discloses a device for directly doubling frequency of locking mold photonic crystal semiconductor laser to generate low wave length laser, comprising a mold photonic crystal semiconductor laser and a frequency-doubling crystal connected to the mold photonic crystal semiconductor laser, wherein the locking mold photonic semiconductor laser is of an laminating structure and comprises an N-type substrate, a lower electrode, an N-type limitation layer, an photonic crystal, an active layer, a P -type limitation layer, a P-type covering layer, an electric insulation layer, and an upper electrode. The lower electrode is made on the lower surface on the N-type substrate; the N-type limitation layer is made on the upper surface of the N-type substrate; the phonic crystal is made on the N-type limitation layer; the active layer is made on the phonic crystal; the P-type limitation layer is made on the active layer, and the P type limitation layer has a projected ridge structure in the middle; the P-type covering layer is made on the ridge structure of the P type limitation layer; an insulation groove is formed in the middle of the P type cover layer on the ridge structure; the electric insulation layer is formed on the P-type limitation layer on the two sides of the ridge structure and on the P-type limitation layer inside the insulation groove; and the upper electrode is formed on the P-type cover layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a mode-locked photonic crystal semiconductor laser direct frequency doubling laser device for realizing short-wavelength laser. Background technique [0002] Due to the characteristics of high photon energy, low diffraction limit, and naked eye resolution, short-wavelength lasers have a wide range of applications in the fields of laser display, optical information storage, and laser printing. Early short-wavelength lasers were generated by gas lasers, but gas lasers face disadvantages such as large volume, low efficiency, and poor reliability. The use of all-solid-state laser frequency doubling can improve the power and stability of short-wavelength lasers, but it also faces problems such as low efficiency. Moreover, the short-wavelength laser required for laser display applications has relatively poor coherence, and the application of all-solid-stat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/098H01S3/109H01S3/091
Inventor 郑婉华刘磊刘云渠红伟
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI