Semiconductor device

A semiconductor, conductive type technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as FWD88 damage

Active Publication Date: 2015-10-07
FUJI ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, due to the n under the edge termination structure 67 - Holes accumulated in region 53 will concentrate and flow through anode tip region 55 during reverse recovery, thus causing damage to FWD 88

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] figure 1 It is a sectional view of main parts of the semiconductor device 100 according to the first embodiment of the present invention. figure 1 is equivalent to Figure 8 The main part cross section of the FWD of FWD88 in the figure shows the main part cross section of the semiconductor device from the vicinity of the edge part of an active part to the outer peripheral part of a semiconductor substrate. figure 1 Among them, the semiconductor device 100 includes the p anode region 4 arranged on the upper surface of the n drift region 2 . The p diffusion region 5 is provided on the n drift region 2 . The p diffusion region 5 is disposed in contact with the p anode region 4 and has a lower concentration than the p anode region 4 and has a deeper diffusion depth. n in the epitaxial part of the n drift region 2 - Region 3 forms edge termination structures 17 and the like.

[0073] in n - On the area 3, there are provided: a resistance area 6 arranged in contact wit...

Embodiment 2

[0094] image 3 It is a cross-sectional view of main parts of a semiconductor device 200 according to Embodiment 2 of the present invention. The difference from Example 1 is that a high-concentration p region 25 (p + ). When the surface concentration of the p-diffusion region 5 is low, ohmic contact with the anode electrode 10 becomes difficult and the contact resistance increases. As the contact resistance increases, the amount of holes trapped from the p diffusion region 5 decreases, and almost all the holes are trapped in the p anode region 4 . As a result, current concentration occurs in the p anode region 4, resulting in damage to the element.

[0095] As a countermeasure to prevent this phenomenon, in order to reduce the contact resistance with the anode electrode 10 while keeping the impurity concentration of the p diffusion region 5 low, it is possible to set the impurity concentration higher than the p diffusion region 5 and the diffusion depth to be lower. Shallo...

Embodiment 3

[0098] Figure 4 It is a sectional view of main parts of a semiconductor device 300 according to Embodiment 3 of the present invention. This semiconductor device 300 differs from Embodiment 1 in the following two points. The first point is: the resistance region 26 is arranged in such a way as to be in contact with the p anode region 4 and the resistance end region 7, that the diffusion depth of the resistance region 26 is deeper than that of the p anode region 4 and the resistance region 6, and is deeper than that of the p anode region 4 and the resistance region 6. The diffusion depth of the guard ring region 8 is shallow. The second point is to separate (shrink) the end of the portion where the p anode region 4 contacts the anode electrode 10 from the resistance region 26 . Figure 4 In the figure, the insulating film 11 is represented by two insulating films of PSG film 11b of phosphorous glass and thermal oxide film 11a.

[0099] The buffer region 18 of Example 3 also ...

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Abstract

This semiconductor device (100) is provided with a p anode region (4) disposed on an n drift region (2) and a p diffusion region (5) disposed on the n drift region (2) in contact with the p anode region (4). The device is also provided with, on an n- region (3), a resistance region (6) disposed in contact with the p diffusion region (5), a plurality of p guard ring regions (8), and a p stopper region (9) disposed separate from the p guard regions (8). By providing the p diffusion region (5), the extraction of holes concentrated in the p anode region is suppressed during reverse recovery, and thus a semiconductor device having high reverse recovery tolerance can be provided.

Description

technical field [0001] The present invention relates to semiconductor devices such as power semiconductor modules. Background technique [0002] In recent years, the application of power semiconductor modules has been expanding in response to the requirement for energy saving. An example of this power semiconductor module will be described. Figure 8 It is a main part circuit diagram of the power semiconductor module 500. The circuit of this power semiconductor module 500 is constituted by a rectifier unit 81 , a brake unit 82 , and an inverter unit 83 . [0003] The rectifier unit 81 is formed of three phases, U-phase, V-phase, and W-phase, each phase is composed of upper and lower arms, and each arm is composed of a diode 84 . The stopper unit 82 is composed of a diode 85 and an IGBT (Insulated Gate Bipolar Transistor) 86 . In the brake unit 82 , a diode 85 and an IGBT 86 are connected in series. [0004] The inverter unit 83 is formed of three phases, U-phase, V-phase...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L21/329H01L29/06H01L29/868
CPCH01L29/861H01L29/0615H01L29/0619H01L29/36
Inventor 河野凉一椎木崇
Owner FUJI ELECTRIC CO LTD
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