Air Supply Mechanism of Sensor Single Crystal Silicon Etching Device

Abstract

The invention discloses an air supply mechanism for a sensor monocrystalline silicon etching apparatus. The air supply mechanism comprises a reaction chamber, a gas supply pipe arranged on the upper end portion of the reaction chamber and connected to a gas souse chamber outside the reaction chamber, and a reaction end cap arranged on the upper end face of the reaction chamber and having a hollow structure. The gas supply pipe extends to the internal of the reaction end cap. A plurality of gas guiding pipes are arranged in the lower end face of the reaction end cap, and each gas guiding pipe comprises a first pipe portion, a second pipe portion and a third pipe portion. The diameter of the first pipe portion becomes smaller gradually along the vertical direction, and the diameter of the third pipe portion becomes larger gradually along the vertical direction. Pressure difference is formed between the first pipe portion and the third pipe portion through the gas guiding pipes, and reaction gas rapidly enters into the reaction chamber and gas leakage due to reaction gas returning back to the reaction end cap is prevented through pressure difference.

Description

technical field [0001] The invention relates to a processing device for sensor components, in particular to an air delivery mechanism of a sensor single crystal silicon etching device. Background technique [0002] During the processing of monocrystalline silicon for sensors, it needs to be etched; in the existing etching process, it is often done by stacking multiple monocrystalline silicon Introduce the reaction gas at the position, and make the reaction gas generate plasma in the electric field environment to etch the single crystal silicon; It is only possible to carry out airtight treatment through the sealing ring, and it is difficult to completely avoid the phenomenon of reaction gas leakage. When the reaction gas leaks out of the chamber, it will not only affect the etching accuracy of the single crystal silicon inside the reaction vessel, but also cause pollution to the outside. Contents of the invention [0003] The technical problem to be solved by the present...

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Problems solved by technology

[0002] During the processing of monocrystalline silicon for sensors, it needs to be etched; in the existing etching process, it is often done by stacking multiple monocrystalline silicon Introduce the reaction gas at the position, and make the reaction gas generate plasma in the electric field environment to etch the single crystal silicon; It can only be sealed through the sealing ring, and it is difficult to completely avoid the leakage of reaction gas

When the reaction gas leaks out of the chamber, it will not only affect the etching accuracy of the single crystal silicon inside the reaction vessel, but also cause pollution to the outside world

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