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Manufacturing method for TI-IGBT (Triple Mode Integrate-Insulated Gate Bipolar Transistor)

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of high cost, wafer warpage, long production cycle, etc., and achieve higher production efficiency, lower costs, and higher quality products. rate effect

Active Publication Date: 2015-10-14
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +2
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  • Abstract
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  • Claims
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Problems solved by technology

[0007] The invention provides a method for manufacturing TI-IGBT to solve the problems of high cost, long production cycle and wafer warpage or fragments in the TI-IGBT production process

Method used

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  • Manufacturing method for TI-IGBT (Triple Mode Integrate-Insulated Gate Bipolar Transistor)
  • Manufacturing method for TI-IGBT (Triple Mode Integrate-Insulated Gate Bipolar Transistor)
  • Manufacturing method for TI-IGBT (Triple Mode Integrate-Insulated Gate Bipolar Transistor)

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Embodiment Construction

[0023] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0024] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0025] Secondly, the present invention is described in detail in combination with schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the gener...

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Abstract

The invention provides a manufacturing method for a TI-IGBT (Triple Mode Integrate-Insulated Gate Bipolar Transistor). The method comprises a step of providing a semiconductor substrate, and performing a first doping on the surface at one side of the semiconductor substrate; a step of annealing the semiconductor substrate to activate doped impurities in the first doping; performing a second doping which is opposite to the first doping in doping type on the semiconductor substrate, so as to enable the doping depth of the second doping is larger than or equal to the doping depth of the first doping and to enable the doping concentration of the second doping is larger than the doping concentrate of the first doping at different doping depths within the doping range; and scanning a to-be-formed second collector region in a region of the second doping using the laser so as to annealing the to-be-formed second collector region, activating doped impurities in the second doping in the to-be-formed second collector region to form a second collector region, wherein a region of the first doping, adjacent to the second collector region, is a first collector region. The method provided by the invention can reduce the production cost, improve the production efficiency, and solve problems of wafer warping or fragment.

Description

technical field [0001] The present invention relates to the field of semiconductor technology, and more specifically, to a method for manufacturing a TI-IGBT (Triple Mode Integrate-Insulated Gate Bipolar Transistor, triple mode integrated insulated gate bipolar transistor). Background technique [0002] TI-IGBT is a traditional VDMOS (Vertical Double Diffused Metal Oxide Semiconductor Field Effect Transistor, vertical double diffused metal oxide semiconductor field effect transistor), IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) and FRD ( Fast Recovery Diode, fast recovery diode) The structure and function of the three devices are integrated into one semiconductor device. [0003] Taking N-channel TI-IGBT as an example, the structure of TI-IGBT is as follows figure 1 As shown, it includes: a relative MOS (Metal Oxide Semiconductor, metal oxide semiconductor) structure 11 and a collector structure 13, and an N- (N-type lightly doped) drift regi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/77
Inventor 张文亮朱阳军田晓丽
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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