Manufacturing method for TI-IGBT (Triple Mode Integrate-Insulated Gate Bipolar Transistor)

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of high cost, wafer warpage, long production cycle, etc., and achieve higher production efficiency, lower costs, and higher quality products. rate effect
CN104979283AActive Publication Date: 2015-10-14INST OF MICROELECTRONICS CHINESE ACAD OF SCI +2
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Publication Date
2015-10-14

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Abstract

The invention provides a manufacturing method for a TI-IGBT (Triple Mode Integrate-Insulated Gate Bipolar Transistor). The method comprises a step of providing a semiconductor substrate, and performing a first doping on the surface at one side of the semiconductor substrate; a step of annealing the semiconductor substrate to activate doped impurities in the first doping; performing a second doping which is opposite to the first doping in doping type on the semiconductor substrate, so as to enable the doping depth of the second doping is larger than or equal to the doping depth of the first doping and to enable the doping concentration of the second doping is larger than the doping concentrate of the first doping at different doping depths within the doping range; and scanning a to-be-formed second collector region in a region of the second doping using the laser so as to annealing the to-be-formed second collector region, activating doped impurities in the second doping in the to-be-formed second collector region to form a second collector region, wherein a region of the first doping, adjacent to the second collector region, is a first collector region. The method provided by the invention can reduce the production cost, improve the production efficiency, and solve problems of wafer warping or fragment.
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Description

technical field

[0001] The present invention relates to the field of semiconductor technology, and more specifically, to a method for manufacturing a TI-IGBT (Triple Mode Integrate-Insulated Gate Bipolar Transistor, triple mode integrated insulated gate bipolar transistor). Background technique

[0002] TI-IGBT is a traditional VDMOS (Vertical Double Diffused Metal Oxide Semiconductor Field Effect Transistor, vertical double diffused metal oxide semiconductor field effect transistor), IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) and FRD ( Fast Recovery Diode, fast recovery diode) The structure and function of the three devices are integrated into one semiconductor device.

[0003] Taking N-channel TI-IGBT as an example, the structure of TI-IGBT is as follows figure 1 As shown, it includes: a relative MOS (Metal Oxide Semiconductor, metal oxide semiconductor) structure 11 and a collector structure 13, and an N- (N-type lightly doped) drift regi...

Claims

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