Switching device

Abstract

A switching device provided herewith includes first to fourth semiconductor layers and a gate electrode. The second semiconductor layer is of a first conductive type or an un-dope type and located on the first semiconductor layer. A hetero junction is formed between the first and the second semiconductor layers. The third semiconductor layer is of a second conductive type and located on the second semiconductor layer. The fourth semiconductor layer is of a second conductive type and located on the third semiconductor layer. A hetero junction is formed between the third and the fourth semiconductor layers. The gate electrode electrically connected to the fourth semiconductor layer.

Description

technical field [0001] The technology disclosed in this specification relates to a switching element. Background technique [0002] Patent Document 1 discloses a first nitride layer, a second nitride layer forming a heterojunction with the first nitride layer, a p-type nitride layer in contact with the second nitride layer, and a p-type nitride layer in contact with the p-type nitride layer. A HEMT (High Electron Mobility Transistor: High Electron Mobility Transistor) with an n-type nitride layer in contact with the n-type nitride layer and a gate electrode connected to the n-type nitride layer. This HEMT uses a 2DEG (Two-Dimensional Electron Gas: Two-Dimensional Electron Gas) channel formed at the interface between the first nitride layer and the second nitride layer as a current path. Since a part of the interface is depleted by the depletion layer extending from the p-type nitride layer when the gate voltage is low, a 2DEG channel is not formed in the depleted region. T...

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Problems solved by technology

Thus, the HEMT of Patent Document 1 has the problem of high gate threshold

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