Temperature control system of semiconductor coating device

Abstract

A temperature control system of a semiconductor coating device comprises a heating disc of an integrated structure. The interior of the heating disc is not of an ordinary heating wire structure while a medium pipeline is arranged to control the temperature of the heating disc. According to the heating structure, the medium pipeline is adopted to be arranged inside the heating disc in a casting mode or corresponding grooves are machined in a machining mode, and then the medium pipeline is welded in the heating disc. The medium pipeline structure is arranged according to vortexes, the medium pipeline is arranged evenly as much as possible, and therefore the temperature control can be better achieved. An air inlet channel is arranged in the middle of the heating disc, a heat transferring medium enters the part between the heating disc and a wafer, and a certain air gap is formed between the heating disc and the wafer; due to the fact that the heat conduction effect of the heat transferring medium is good, the heat of the heating disc can be rapidly and evenly conducted to the wafer, or the heat of the wafer is rapidly conducted to the heating disc to be conducted out. By means of the reasonable ventilation structure design, the heat transferring medium can rapidly and evenly flow in the gap, and heat exchange of the heating disc and the wafer is achieved in time.

Description

technical field [0001] The invention relates to a temperature control system for semiconductor coating equipment, which is mainly suitable for semiconductor coating equipment to control the temperature of heat sources, and belongs to the application technical field of semiconductor thin film deposition. Background technique [0002] Semiconductor equipment often needs to heat the wafer and the chamber or maintain the temperature required for the deposition reaction during the deposition reaction, so the heating plate must have a heating structure to meet the purpose of preheating the wafer. Most of the semiconductor thin film deposition equipment will have plasma to participate in the deposition reaction during the deposition process. Due to the release of plasma energy and the energy release of the reaction between chemical gases, the temperature of the heating plate and wafer will increase with the increase of radio frequency and process time. The temperature will continue...

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Problems solved by technology

However, semiconductor thin film deposition reactions are mostly carried out under vacuum conditions. In vacuum conditions, heat conduction mainly depends on radiation. The heat conduction efficiency is low, and heat will accumulate on the wafer surface.

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