Segmental thermoelectric generator structure design method

A thermoelectric generator and structural design technology, applied in the direction of generator/motor, thermoelectric device manufacturing/processing, electrical components, etc., can solve the research problems of scholars

Active Publication Date: 2015-10-21
TIANJIN UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, in the segmented structure design, the calculation of the segmented ratio is an important factor directly related to the performance of the segmented thermoelectric generator, and no scholars have conducted special research on it.

Method used

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  • Segmental thermoelectric generator structure design method
  • Segmental thermoelectric generator structure design method
  • Segmental thermoelectric generator structure design method

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Embodiment Construction

[0081] The technical scheme of the present invention will be further described below in conjunction with specific examples.

[0082] The conductive connection layer used in this example is copper, and two p-type semiconductors and two n-type semiconductors are used, and the two p-type semiconductor materials are LiNiO and BiSbTeC 60 , assuming that the physical parameters of the two n-type semiconductors are the same as those of the two p-type semiconductors, namely α n1 =-α p1 , σ n1 = σ p1 , lambda n1 =λ p1 、α n2 =-α p2 , σ n2 = σ p2 , lambda n2 =λ p2 (So ​​all parameters of p-type semiconductor and n-type semiconductor are the same, the following design process only needs to calculate the proportion of p-type semiconductor), the physical parameters of the two p-type semiconductors are as follows:

[0083] 1. α p1 =1.76×10 -12 T 3 -4.18×10 -9 T 2 +2.57×10 -6 T-2.67×10 -4 V K -1

[0084] σ p1 =1.62×10 -6 T 5 -3.31×10 -3 T 4 +2.69T 3 -1.08×10 3 T 2 ...

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Abstract

The invention discloses a segmental thermoelectric generator structure design method comprising the steps of determining the physical parameters, geometric parameters and work environment of a material for thermoelectric generators, designing a power factor and an efficiency factor, using the two factors to calculate the working temperature range of the two ends of a p / n-type semiconductor through an iteration method, and calculating the segmenting proportion of a segmental thermoelectric generator after the working temperature range is determined, thus obtaining the design structure of the segmental thermoelectric generator. Compared with the prior art, by adopting the design method of the invention, semiconductor materials with different optimal working temperature ranges can be combined, so that the potential of existing semiconductor materials can be utilized to be maximum, and the performance of thermoelectric generators can be improved greatly.

Description

technical field [0001] The invention belongs to the field of thermoelectric power generation, and is a structural design method of a segmental thermoelectric generator (used to calculate the segment ratio of different semiconductor materials of the segmental thermoelectric generator), and the design method can greatly improve the existing thermoelectric generator output power and thermoelectric conversion efficiency. Background technique [0002] A thermoelectric generator (TEG) is a device that directly converts heat energy into electrical energy based on the Seebeck effect. It has the advantages of compact design, high reliability, and zero emissions. However, due to its low thermoelectric conversion efficiency (generally not higher than 5%) ), its development has been greatly restricted. The main reason for its low thermoelectric conversion efficiency is that the optimal operating temperature range of the semiconductor materials currently used to make TEGs is mostly smal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02N11/00H01L35/34
CPCH02N11/002H10N10/01
Inventor 焦魁张国宾樊林浩牛志强
Owner TIANJIN UNIV
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