Silicon controlled rectifier

Abstract

The invention provides a silicon controlled rectifier comprising a substrate; an N well region and a P well region which are arranged at the first side of the substrate and adjacent to each other; a first N-type doped region and a first P-type doped region which are arranged at the upper surface of the N well region and adjacent to each other; a second N-type doped region and a second P-type doped region which are arranged at the upper surface of the P well region; a first oxidation isolation region which isolates the first P-type doped region and the second N-type doped region; a second oxidation isolation region which isolates the second N-type doped region and the second P-type doped region; an anode end which is coupled with the first N-type doped region and the first P-type doped region; and a cathode end which is coupled with the second N-type doped region and the second P-type doped region. Ion doping concentration of the first P-type doped region is lower than that of the second P-type doped region for eighty percent. According to the framework of the silicon controlled rectifier, sustaining voltage of the silicon controlled rectifier can be effectively enhanced without increasing channel length or using additional auxiliary circuit.

Description

technical field [0001] The present invention relates to an electrostatic discharge protection device, in particular to a silicon-controlled rectifier for providing electrostatic protection for high-voltage circuits. Background technique [0002] In related fields, a silicon controlled rectifier (SCR) is often used as an electrostatic discharge protection device (ESD protection device). Since the silicon controlled rectifier will produce a positive feedback effect during operation, the holding voltage is usually low, making the traditional silicon controlled rectifier only suitable for use as an electrostatic protection device for integrated circuits with an operating voltage below 5V. [0003] Traditionally, the holding voltage of the silicon controlled rectifier can be increased by increasing the channel length of the silicon controlled rectifier or using other additional auxiliary circuits. However, increasing the channel length of the silicon controlled rectifier will in...

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Problems solved by technology

However, increasing the channel length of the silicon-controlled rectifier will inevitably lead to an increase in the size of the silicon-controlled rectifier, and the use of other additional auxiliary circuits will increase the design complexity and cost of the overall circuit

Therefore, the aforementioned two methods are not ideal solutions

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