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Silicon controlled rectifier

A technology of silicon-controlled rectifier and doped region, which is applied to electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of increasing the size of silicon-controlled rectifiers, increasing the complexity and cost of overall circuit design, etc. Achieve the effect of increasing the holding voltage and expanding the application range

Inactive Publication Date: 2015-11-04
RICHTEK TECH
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  • Summary
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, increasing the channel length of the silicon-controlled rectifier will inevitably lead to an increase in the size of the silicon-controlled rectifier, and the use of other additional auxiliary circuits will increase the design complexity and cost of the overall circuit
Therefore, the aforementioned two methods are not ideal solutions

Method used

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  • Silicon controlled rectifier

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Embodiment Construction

[0022] Embodiments of the present invention will be described below in conjunction with related drawings. In the drawings, the same reference numerals represent the same or similar elements or method flows.

[0023] figure 1 It is a simplified cross-sectional view of a silicon controlled rectifier 100 according to an embodiment of the present invention. The silicon controlled rectifier 100 includes a substrate 110, an N well region (N well) 120, a P well region (P well) 130, a first N-type doped region (N-type doped region, N region) 122, a A first P-type doped region (P region, P region) 124, a second N-type doped region 132, a second P-type doped region 134, a first oxide isolation region (oxide isolation region) 142 , a second oxidation isolation region 144 , an anode terminal 150 , and a cathode terminal 160 .

[0024] Such as figure 1 As shown, the N-well region 120 is disposed on a first side of the substrate 110 . The P well region 130 is disposed on the first side...

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Abstract

The invention provides a silicon controlled rectifier comprising a substrate; an N well region and a P well region which are arranged at the first side of the substrate and adjacent to each other; a first N-type doped region and a first P-type doped region which are arranged at the upper surface of the N well region and adjacent to each other; a second N-type doped region and a second P-type doped region which are arranged at the upper surface of the P well region; a first oxidation isolation region which isolates the first P-type doped region and the second N-type doped region; a second oxidation isolation region which isolates the second N-type doped region and the second P-type doped region; an anode end which is coupled with the first N-type doped region and the first P-type doped region; and a cathode end which is coupled with the second N-type doped region and the second P-type doped region. Ion doping concentration of the first P-type doped region is lower than that of the second P-type doped region for eighty percent. According to the framework of the silicon controlled rectifier, sustaining voltage of the silicon controlled rectifier can be effectively enhanced without increasing channel length or using additional auxiliary circuit.

Description

technical field [0001] The present invention relates to an electrostatic discharge protection device, in particular to a silicon-controlled rectifier for providing electrostatic protection for high-voltage circuits. Background technique [0002] In related fields, a silicon controlled rectifier (SCR) is often used as an electrostatic discharge protection device (ESD protection device). Since the silicon controlled rectifier will produce a positive feedback effect during operation, the holding voltage is usually low, making the traditional silicon controlled rectifier only suitable for use as an electrostatic protection device for integrated circuits with an operating voltage below 5V. [0003] Traditionally, the holding voltage of the silicon controlled rectifier can be increased by increasing the channel length of the silicon controlled rectifier or using other additional auxiliary circuits. However, increasing the channel length of the silicon controlled rectifier will in...

Claims

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Application Information

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IPC IPC(8): H01L23/60
Inventor 洪崇佑李建兴高字成黄宗义
Owner RICHTEK TECH
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