Silicon controlled rectifier
A technology of silicon-controlled rectifier and doped region, which is applied to electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of increasing the size of silicon-controlled rectifiers, increasing the complexity and cost of overall circuit design, etc. Achieve the effect of increasing the holding voltage and expanding the application range
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[0022] Embodiments of the present invention will be described below in conjunction with related drawings. In the drawings, the same reference numerals represent the same or similar elements or method flows.
[0023] figure 1 It is a simplified cross-sectional view of a silicon controlled rectifier 100 according to an embodiment of the present invention. The silicon controlled rectifier 100 includes a substrate 110, an N well region (N well) 120, a P well region (P well) 130, a first N-type doped region (N-type doped region, N region) 122, a A first P-type doped region (P region, P region) 124, a second N-type doped region 132, a second P-type doped region 134, a first oxide isolation region (oxide isolation region) 142 , a second oxidation isolation region 144 , an anode terminal 150 , and a cathode terminal 160 .
[0024] Such as figure 1 As shown, the N-well region 120 is disposed on a first side of the substrate 110 . The P well region 130 is disposed on the first side...
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