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A kind of flexible copper-zinc-tin-sulfur thin film solar cell and preparation method thereof

A solar cell, copper-zinc-tin-sulfur technology, applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of pollution costs, large usage of rare elements, etc., and achieve the effect of low cost, simple structure, and wide application prospects

Inactive Publication Date: 2018-04-03
MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0005] In order to overcome the problems of large amount of rare elements used in the prior art, pollution and high cost, the present invention provides a flexible copper-zinc-tin-sulfur thin-film solar cell with less rare elements and green environmental protection

Method used

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  • A kind of flexible copper-zinc-tin-sulfur thin film solar cell and preparation method thereof

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Embodiment

[0030] The flexible copper-zinc-tin-sulfur thin-film solar cell includes a flexible substrate 1, and a Mo back electrode layer 2 deposited layer by layer from bottom to top on the flexible substrate, Cu 2 ZnSnS 4 Light absorbing layer 3, CdS buffer layer 4, AZO / i-ZnO window layer 5, MgF 2 Anti-reflection layer 6 and Ni-Al gate electrode 7. Its core layer is made of Cu 2 ZnSnS 4 Replaced traditional CuInGaSe 2 as a light absorbing layer. In this embodiment, a polyimide film is used as a flexible substrate, and both the Mo back electrode layer and the AZO / i-ZnO window layer adopt a double-layer structure. Specifically, the Mo back electrode layer is composed of a high damping layer and a low damping layer stacked up and down, wherein the thickness of the high damping layer is 100 ± 5 nm, and the thickness of the low damping layer is 500 ± 25 nm; The AZO / i-ZnO window layer is composed of an intrinsic ZnO barrier layer and an aluminum-doped ZnO conductive layer stacked up an...

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Abstract

The invention discloses a flexible Cu2ZnSnS4 thin-film solar cell, which comprises a flexible substrate, an Mo back electrode layer, a Cu2ZnSnS4 light absorption layer, a CdS buffer layer, an AZO / i-ZnO window layer, an MgF2 antireflection layer and an Ni-Al gate electrode. According to the invention, Cu2ZnSnS4 is adopted to replace traditional CuInGaSe2 to act as a light absorption layer of the thin-film solar cell, and Zn, Sn and S, which are friendly to the environment, are used to replace rare elements of In, Ga and Se, thereby reducing the content of the rare elements in thin-film cells, reducing the manufacturing cost of the thin-film solar cell and devices thereof, being green and environment friendly, and being applicable to industrial production of roll-to-roll large-area flexible thin-film solar cells. The thin-film solar cell disclosed by the invention is light in weight, high in specific power, capable of being curled and easy to carry, and has a wide application market.

Description

technical field [0001] The invention relates to the technical field of solar cell device preparation, in particular to a flexible copper-zinc-tin-sulfur thin-film solar cell and a preparation method thereof. Background technique [0002] copper indium gallium selenide (CuIn x Ga 1-x Se 2 ) Thin-film solar cells have the advantages of high conversion efficiency, good long-term stability, strong radiation resistance, and laboratory photoelectric conversion efficiency exceeding 20%, and are considered to be one of the most promising thin-film solar cells. As many companies have proposed and gradually realized CuIn x Ga 1-x Se 2 Large-scale industrialization of solar cells, CuIn x Ga 1-x Se 2 The development of solar cells has reached a new level. At present, the efficiency of its large-area modules has exceeded 15%, and the global annual production capacity has exceeded 1GW. [0003] However, CuIn x Ga 1-x Se 2 In, Ga, and Se in the absorbing layer are rare elements...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L31/18
CPCH01L31/0326H01L31/18Y02E10/50Y02P70/50
Inventor 杨盼赵晓冲杨锁龙杨瑞龙杨蕊竹
Owner MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS