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Test method and test circuit for dynamic voltage-balancing characteristic and reverse recovery characteristic of SiC IGBT (Insulated Gate Bipolar Transistor) serial connection valve block

A dynamic voltage equalization and reverse recovery technology, applied in the field of power electronics, can solve the problem that the double-pulse test method cannot fully adapt to the SiCIGBT series valve group test, etc., and achieve the effect of fast and accurate measurement

Active Publication Date: 2015-11-11
STATE GRID CORP OF CHINA +2
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0008] The object of the invention is: in order to overcome the situation that the existing double-pulse test method cannot fully adapt to the test of the SiCIGBT series valve group, propose a test method and test circuit for the dynamic pressure equalization characteristics and reverse recovery characteristics of the SiCIGBT series valve group

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  • Test method and test circuit for dynamic voltage-balancing characteristic and reverse recovery characteristic of SiC IGBT (Insulated Gate Bipolar Transistor) serial connection valve block
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  • Test method and test circuit for dynamic voltage-balancing characteristic and reverse recovery characteristic of SiC IGBT (Insulated Gate Bipolar Transistor) serial connection valve block

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Embodiment 1

[0027] Embodiment 1: The principle of the test circuit used for SiCIGBT series valve group dynamic pressure equalization characteristic and reverse recovery characteristic test of this embodiment is as follows image 3 shown. image 3 Among them, C is the bus capacitance, G1 and G2 are two IGBT series valve groups measured at the same time, G1 is the upper half valve arm, and G2 is the lower half valve arm. S1 and S2 are air switches, and resistance R and reactance L constitute a power load unit. The specific structures of G1 and G2 are as follows Figure 4 As shown, all of them are directly connected in series with multiple SiCIGBTs. G1 and G2 are connected in series in the same direction to form the unit under test, and are connected in parallel with the bus capacitor C. One end of the power load unit is connected between G1 and G2, and the other end is connected to both ends of the bus capacitor C through S1 and S2 respectively. remove image 3 In addition, the test cu...

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Abstract

The invention discloses a test method and test circuit for dynamic voltage-balancing characteristic and reverse recovery characteristic of SiC IGBT (Insulated Gate Bipolar Transistor) serial connection valve block, and belongs to the technical field of power electronics. From the closely relevant dynamic characteristics in an IGBT direct serial connection application, the test method for dynamic voltage-balancing characteristic and reverse recovery characteristic of SiC IGBT serial connection valve block uses a special test circuit and a fixed frequency multiple pulse method to obtain a continuous dynamic process. The test method of the invention can measure two serial connection valve blocks at the same time and perform different test contents for two times continuously so that one test process is finished, thus being simple and efficient for the test.

Description

technical field [0001] The invention belongs to the technical field of power electronics, and in particular relates to a test method and a test circuit for the dynamic pressure equalization characteristics and reverse recovery characteristics of a SiCIGBT series valve group. Background technique [0002] In high-voltage and high-power converters, the IGBT single-tube withstand voltage level is very limited, which is far from meeting the needs of practical engineering applications. IGBT direct series technology is an important method to solve this problem. This method greatly simplifies the structure of the high-voltage high-power converter, and the control system is simple. The key problem is how to ensure the dynamic and static voltage balance of each series device, especially the dynamic voltage balance, so as to prevent the device from being damaged due to overvoltage. [0003] There are many reasons for the dynamic voltage imbalance of series devices, one of which is ve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
Inventor 王志刚侯凯骆健董长城李伟邦范镇淇辛甜
Owner STATE GRID CORP OF CHINA
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