ITO film sputtering target material cleaning method

A sputtering target and target technology, which is applied in the field of surface cleaning of ITO thin film sputtering targets, can solve problems such as difficulty in improving the cleanliness of sputtering targets, pollution of dust-free workshops, and increased manufacturing costs. The effect of nodulation on the surface of the material, improvement of product quality, and improvement of utilization rate

Inactive Publication Date: 2015-11-18
SHANDONG JINDING ELECTRONICS MATERIALS CO LTD
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Problems solved by technology

Blowing off with an air gun can easily cause pollution in the clean room, and the use of non-residual adhesive tape not only increases the manufacturing cost, but also cannot remove all impurities

Method used

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  • ITO film sputtering target material cleaning method
  • ITO film sputtering target material cleaning method
  • ITO film sputtering target material cleaning method

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Embodiment Construction

[0026] In order to more clearly set forth the structural features, technical means and the specific purpose and functions achieved by the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings:

[0027] Such as figure 1 As shown, the device for ITO thin film sputtering production includes a sealed cavity 1, and an unwinding roll 2, a winding roll 4, a coating main roll 3 and a target 5 arranged in the sealed cavity 1, and the unwinding roll 2 and winding roll 3 are respectively located on both sides of the sealed chamber 1, the coating main roll 3 is located below between the unwinding roll 2 and the winding roll 4, and the target 5 is located directly below the coating main roll 3 , the substrate 6 on the unwinding roll 2 bypasses the lower end of the coating main roll 3 and reaches the winding roll 4 . During the film forming process, the impurities on the surface of the target 5 below are continuousl...

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Abstract

The invention discloses an ITO film sputtering target material cleaning method comprising the following steps: 1, using a deduster to thoroughly remove large particles; 2, using a sand paper of a corresponding mesh number to grind a target material sputtering surface, a grinding direction complies with a track direction formed on the target material sputtering surface, thus removing oxide and impurity of the sputtering surface; 3, using the deduster to thoroughly remove particles and dusts generated by the sand paper grinding the target material sputtering surface; 4, using a dust-free cloth to dip a little alcohol so as to clean the target material sputtering surface, thus removing the remaining dusts; 5, repeating the step 4 until the surface of the dust-free cloth only has slight color changes. The said steps can effectively remove the oxide, impurity and dusts on the target material sputtering surface, thus reducing target material surface nodulation in ITO film production, reducing target material cleaning frequency, improving production efficiency, improving target material utilization rate, and reducing production cost.

Description

technical field [0001] The invention relates to a surface cleaning technology for an ITO thin film sputtering target, in particular to a cleaning method for an ITO thin film sputtering target. Background technique [0002] In the production process of ITO sputtering film formation, due to the low cleanliness of the target surface, some black oxides ranging in size from a few microns to a few millimeters are usually accumulated on the sputtering surface of the target. These foreign objects are considered to be IN or SI Incomplete oxides are generally called nodules. Nodules are insulating, and the amount of nodules increases, which often causes abnormal discharges during the sputtering process, causing particles to appear in the ITO film and affecting the film quality. With the increase of abnormal nodules on the surface of the target, it is necessary to stop the sputtering operation and clean and reproduce the nodules on the surface of the sputtering target. However, due to...

Claims

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Application Information

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IPC IPC(8): B08B1/00B08B5/04C23C14/34B24B27/033
CPCB08B1/006B08B5/04B24B27/033C23C14/3407
Inventor 耿国凌由龙陈帅王洪浜邹威
Owner SHANDONG JINDING ELECTRONICS MATERIALS CO LTD
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