Piezoresistive pressure sensor and preparation method thereof

A pressure sensor and piezoresistive technology, which is applied in the measurement of fluid pressure by changing ohmic resistance and the measurement of the property force of piezoresistive materials. It can solve problems such as poor biocompatibility and reduce transmission channels. , the effect of increasing the forbidden band width and increasing the resistivity

Active Publication Date: 2015-11-25
SOUTHEAST UNIV
View PDF7 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the silicon-based piezoresistive pressure sensor with this structure is inflexible and has poor biocompatibility

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Piezoresistive pressure sensor and preparation method thereof
  • Piezoresistive pressure sensor and preparation method thereof
  • Piezoresistive pressure sensor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The technical solutions of the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0033] Such as figure 1 As shown, a piezoresistive pressure sensor according to an embodiment of the present invention includes an LCP substrate 1 , an LCP film layer 2 , a metal electrode 3 , a graphene film layer 4 and a graphene array layer 7 . The LCP thin film layer 2 is fixedly connected on the LCP substrate 1 , the LCP thin film layer 2 is provided with through holes in an array structure, and the metal electrodes 3 are connected above the two ends of the LCP thin film layer 2 . The graphene film layer 4 is connected on the LCP film layer 2, and the graphene film layer 4 fills the gap between the metal electrodes 3 and covers the metal electrodes 3. The graphene array layer 7 is filled in the through hole of the LCP film 2, and the graphene film layer 4 and the graphene array layer 7 are connected.

[0034] Liqu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a piezoresistive pressure sensor and a preparation method thereof. The pressure sensor comprises an LCP substrate, an LCP thin film layer, metal electrodes, a graphene thin film layer and a graphene array layer. The LCP thin film layer is fixedly connected to the LCP substrate; the LCP thin film layer is provided with through holes in an array structure; the metal electrodes are connected above the two ends of the LCP thin film layer; the graphene thin film layer is connected on the LCP thin film layer; the graphene thin film layer fills a gap between the metal electrodes and covers the metal electrodes; and the graphene array layer fills the through holes in the LCP thin film layer, and the graphene thin film layer is connected with the graphene array layer. The piezoresistive pressure sensor not only has the advantage that the substrate can be bent and deformable, but also has good sensitivity, and can be widely applied to the fields of biomedicine and wearable equipment and the like.

Description

technical field [0001] The invention relates to a pressure sensor, in particular to a piezoresistive pressure sensor and a preparation method thereof. Background technique [0002] Traditional silicon-based pressure sensors are rarely used in many fields such as biomedicine due to the inflexibility of their substrates. At the same time, there is an urgent need for flexible substrate pressure sensors that can be bent and deformed for use in many fields. The structure of the existing silicon-based piezoresistive pressure sensor is to make four pressure-sensitive resistors in the stress concentration area by diffusion or ion implantation on a square or circular silicon strained film, and the four resistors are interconnected to form a Whiston bridge. Through the Wheatstone bridge, the change of the resistance value of the four pressure-sensitive resistors caused by the external pressure is converted into an output voltage, and the measurement of the pressure can be realized b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01L1/18G01L9/06
Inventor 聂萌章丹黄庆安
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap