A polysilicon emitter transistor and its manufacturing method
A production method and emitter technology, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of high production cost, large chip area, and increased production cost, so as to reduce production cost and chip area , The effect of saving production costs
Active Publication Date: 2018-06-05
FOUNDER MICROELECTRONICS INT
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Problems solved by technology
[0006] In the above manufacturing method, when forming the N-type polysilicon emitter, if the N-type polysilicon layer after the rapid heat treatment is directly etched, the uniformity of the etching process is poor, and it is difficult to stably control the emitter in the process. Retention of polysilicon in the zone window
Therefore, in the above-mentioned manufacturing method, the N-type polysilicon emitter must be formed by photolithography and etching technology, and the production cost of the N-type polysilicon emitter is formed by the photolithography process, and there is a problem of alignment deviation due to the photolithography process. , so when the N-type polysilicon layer is processed by photolithography and etching processes, in order to ensure that the N-type polysilicon emitter can still completely cover the emission region window in the case of misalignment in the photolithography process, such as figure 1 As shown, the width of the N-type polysilicon emitter 05 is larger than the width of the emitter window 04, resulting in a larger chip area, which further increases the production cost
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example 1
[0060] like Figure 4a As shown, an N-type diffusion region and an N-type polysilicon emitter are fabricated on the substrate with an N-type collector region 100, a thick oxide layer 200, a P-type base region 300, and a thin oxide layer 400 sequentially formed, which may specifically include the following steps :
[0061] (1) The emission region window 500 is formed in the thin oxide layer 400 by photolithography and etching process, exposing the P-type base region 300 located in the region of the emission region window 500, such as Figure 4b shown;
[0062] Specifically, during specific implementation, the photoresist layer can be spin-coated on the substrate first, and after the photolithography process, the emission region window pattern is defined on the photoresist layer, and the photolithography with the emission region window pattern The adhesive layer is a mask, and the thin oxide layer is etched along the window pattern of the emission area to expose the P-type bas...
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The invention discloses a polysilicon emitter transistor and a manufacturing method thereof. In the manufacturing method, after a polysilicon layer for filling an emitting area window and covering surfaces of a thin oxidation layer and a thick oxidation layer is formed, the etching process is directly employed to remove the polysilicon layer of areas outside the area of the emitting area window. Therefore, compared with the prior art, photoetching treatment of the polysilicon layer is not needed so that the production cost is lowered; besides, the photoetching treatment of the polysilicon layer is not needed so that the condition that in the conventional method, the width of a polysilicon emitter is designed to be greater than the width of the emitting area window is prevented, the area of a chip can be reduced, and the production cost of the polysilicon emitter transistor is further reduced.
Description
technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a polysilicon emitter transistor and a manufacturing method thereof. Background technique [0002] Bipolar transistors are one of the common device structures that constitute modern large-scale integrated circuits. Because bipolar transistors have the advantages of fast operation speed, small saturation voltage drop, high current density, and low production cost, they are suitable for manufacturing analog circuits. . [0003] A bipolar transistor is mainly composed of an emitter region, a base region and a collector region. According to the conductivity type, bipolar transistors can be divided into NPN transistors and PNP transistors. Among them, in the NPN transistor, the material of the emitter region and the collector region is N-type semiconductor, and the material of the base region is P-type semiconductor; while in the PNP transistor, the material of the emi...
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IPC IPC(8): H01L21/331H01L29/72H01L29/08
Inventor 潘光燃文燕王焜石金成高振杰
Owner FOUNDER MICROELECTRONICS INT