Measuring method, etching method, and forming method of semiconductor device

Abstract

The invention provides a measuring method, etching method, and forming method of a semiconductor device. The semiconductor device is obtained by performing Barc Open on an organic antireflective layer used as a mask. According to the measuring method, the semiconductor device is subjected to thermal treatment within preset time and at a preset temperature and a measuring machine performs optical critical dimension measurement on the semiconductor device having been subjected to the thermal treatment, wherein in the thermal treatment process, the solvent and the water that are contained in a photoresistor in the semiconductor device volatilize and a housing is formed in the surface of the photoresistor and cannot generate electron absorption. The housing formed in the surface of the semiconductor device having been subjected to the thermal treatment is relatively hard and smooth and prevents a phenomenon of electron absorption such that optical critical dimension measurement is clear and accurate. As a result, a problem of inaccurate measurement is solved fundamentally; wafer verification is prevented; a process management and control capability is greatly improved; and high cost is saved.

Description

technical field [0001] The invention relates to the technical field of semiconductor packaging equipment, in particular to a measuring method, an etching method and a forming method of a semiconductor device. Background technique [0002] Using the organic anti-reflective layer as a mask (ie, etch barrier layer) to perform dry etching (BarcOpen) as a key process step in the formation of the low-voltage gate oxide layer (LVoxide) of the DualGate (DualGate) device, the critical dimension (CD) measurement of the Process control is very important, but since the wafer is directly measured for CD without dry debonding and wet cleaning after dry etching, the surface of the wafer (wafer) continues to accumulate charges under the irradiation of electron beams and has a negative impact on the wafer surface. The repulsive effect of the electron beam eventually causes the surface of the wafer to be out of focus under the lens, the measuring machine cannot distinguish the measurement pat...

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a measurement method, an etching method and a forming method of a semiconductor device, so as to solve the problem of semiconductor devices caused by dry etching using an organic anti-reflection layer as an etching barrier layer in the prior art. The problem of inaccurate critical dimension optical measurement (CD measurement)

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