Measurement method, etching method and formation method of semiconductor device

Abstract

The invention provides a measuring method, etching method, and forming method of a semiconductor device. The semiconductor device is obtained by performing Barc Open on an organic antireflective layer used as a mask. According to the measuring method, the semiconductor device is subjected to thermal treatment within preset time and at a preset temperature and a measuring machine performs optical critical dimension measurement on the semiconductor device having been subjected to the thermal treatment, wherein in the thermal treatment process, the solvent and the water that are contained in a photoresistor in the semiconductor device volatilize and a housing is formed in the surface of the photoresistor and cannot generate electron absorption. The housing formed in the surface of the semiconductor device having been subjected to the thermal treatment is relatively hard and smooth and prevents a phenomenon of electron absorption such that optical critical dimension measurement is clear and accurate. As a result, a problem of inaccurate measurement is solved fundamentally; wafer verification is prevented; a process management and control capability is greatly improved; and high cost is saved.

Description

technical field [0001] The invention relates to the technical field of semiconductor packaging equipment, in particular to a measuring method, an etching method and a forming method of a semiconductor device. Background technique [0002] Using the organic anti-reflective layer as a mask (ie, etch barrier layer) for dry etching (Barc Open) as a key process step for forming a low-voltage gate oxide layer (LV oxide) for a dual gate (Dual Gate) device, its critical dimension (CD) Measurement is very important for process control, but since the wafer is directly measured for CD after dry etching without dry debonding and wet cleaning, the surface of the wafer (wafer) continues to accumulate under electron beam irradiation. The charge repulses the electron beam, which eventually causes the surface of the wafer to be out of focus under the lens, the measuring machine cannot distinguish the measurement pattern, and the CD measurement cannot obtain the correct value. [0003] Takin...

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a measurement method, an etching method and a forming method of a semiconductor device, so as to solve the problem of semiconductor devices caused by dry etching using an organic anti-reflection layer as an etching barrier layer in the prior art. The problem of inaccurate critical dimension optical measurement (CD measurement)

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