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A Gaussian-doped pπn ultraviolet detector with active region

A UV detector and doping technology, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., to achieve the effect of improving light absorption efficiency and spectral responsivity

Active Publication Date: 2017-03-08
CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional PIN detectors have encountered difficulties in further improving the responsivity without changing the thickness of the absorption region to ensure the response speed of the device.

Method used

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  • A Gaussian-doped pπn ultraviolet detector with active region
  • A Gaussian-doped pπn ultraviolet detector with active region
  • A Gaussian-doped pπn ultraviolet detector with active region

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Embodiment Construction

[0027] The present invention will be further described below in conjunction with accompanying drawing and specific embodiment:

[0028] Such as figure 1 As shown, in this specific embodiment, an active region Gaussian-doped GaN-based PπN structure ultraviolet detector of the present invention includes a substrate 1, a buffer layer 2, an N-type ohmic contact layer 3, and a π-type Gaussian gradient doped absorption layer 4, a P-type ohmic contact layer 5, a ring-shaped P-type ohmic contact electrode 6, and a ring-shaped N-type ohmic contact electrode 7. The buffer layer 2 is epitaxy on the substrate 1, the N-type ohmic contact layer 3 is fabricated on the buffer layer 2, the π-type Gaussian gradient doped absorbing layer 4 is fabricated on the N-type ohmic contact layer 3, and the P-type ohmic contact layer 5 is fabricated On the π-type Gaussian gradient doped absorbing layer 4 , the P-type ohmic electrode 6 is fabricated on the P-type ohmic contact layer 5 , and the N-type ohm...

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Abstract

The invention discloses an active-region Gaussian doped p-pi-n ultraviolet detector, belonging to the technical field of a semiconductor device. The device comprises a substrate (1), a buffer layer (2), a N-type ohmic contact layer (3), a N-type ohmic contact electrode (7), a pi-type absorption layer (4), a P-type ohmic contact layer (5) and a P-type ohmic contact electrode (6), wherein the buffer layer is epitaxially arranged on the substrate, the N-type ohmic contact layer is fabricated on the buffer layer, the N-type ohmic contact electrode is of an annular structure and is also fabricated on the N-type ohmic contact layer, the pi-type absorption layer is gradually Gaussian doped along a vertical epitaxial direction and is fabricated on the N-type ohmic contact layer, the P-type ohmic contact layer is fabricated on the pi-type absorption layer, and the P-type ohmic contact electrode is fabricated on the P-type ohmic contact layer. The active-region Gaussian doped p-pi-n ultraviolet detector has the advantages that the responsivity of the detector can be effectively improved through doping and adjusting electric field distribution of an absorption region.

Description

[0001] Technical field: [0002] The invention belongs to the technical field of semiconductor optoelectronic devices, and in particular relates to a Gaussian-doped pπn ultraviolet detector in an active region. [0003] Background technique: [0004] Ultraviolet detection technology is another dual-use photoelectric detection technology after infrared detection and laser detection technology. As an important supplement to infrared detection technology, ultraviolet detection technology has a wide range of applications, such as missile early warning, precision guidance, ultraviolet secure communication, biochemical analysis, open flame detection, biomedical analysis, offshore oil monitoring, ozone concentration monitoring, solar index monitoring and other fields . GaN-based UV detectors have unique advantages over traditional photomultiplier tubes and Si detectors. Although photomultiplier tubes can achieve high-response ultraviolet detection, photomultiplier tubes require high...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0304H01L31/09
CPCH01L31/03048H01L31/09
Inventor 王俊郭进谢峰王国胜吴浩然王唐林宋曼
Owner CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST
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