Black silicon nano-pin photodetector structure and its preparation method
A photodetector and nanostructure technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as restricting national defense capabilities, increasing the economic burden of ordinary people, and restricting exploration capabilities.
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[0034] The disclosure also provides a method for preparing a black silicon nano-PIN photodetector structure, such as figure 2 Shown, the preparation method of described its black silicon nanometer PIN photodetector structure comprises the following steps:
[0035] S1, cleaning the P-type crystalline silicon substrate with standard RCA;
[0036] S2, preparing a silicon oxide film on both sides of the cleaned silicon substrate;
[0037] S3, opening a boron diffusion window on the front surface and back surface of the silicon substrate covered with silicon oxide film, and performing boron doping to form a front surface protection ring (that is, a front surface boron-doped protection ring) and a back surface P+ heavily doped region;
[0038] S4, opening a phosphorus diffusion window on the front surface of the boron-doped silicon substrate, and preparing a black silicon nanostructure;
[0039] S5, performing phosphorus doping in the black silicon nanostructure region to form a...
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