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Solar cells and diffusion method thereof

A technology of solar cells and diffusion methods, applied in the field of solar cells, can solve the problems of low conversion efficiency of solar cells, achieve the effects of increasing concentration gradient distribution and carrier life, increasing absorption rate, and improving spectral responsivity

Active Publication Date: 2016-06-29
YINGLI GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] However, in the process of actual production, the inventors have found through research that the conversion efficiency of solar cells produced by the diffusion method of the prior art is generally low

Method used

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  • Solar cells and diffusion method thereof
  • Solar cells and diffusion method thereof
  • Solar cells and diffusion method thereof

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Experimental program
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Embodiment 1

[0044] The flow chart of the diffusion method disclosed in this embodiment is as follows: figure 1 shown, including steps:

[0045] S101: Put the silicon wafer into the diffusion furnace.

[0046] Wherein, the silicon wafer is the silicon wafer to be diffused during the solar cell production process.

[0047] S102: Raise the temperature in the diffusion furnace to the first temperature, and at the same time, feed nitrogen and oxygen containing phosphorus oxychloride into the diffusion furnace for the first time.

[0048]Wherein, the range of the first temperature is 780°C~800°C, including the endpoint value, the range of the first time is 11.5min~13.5min, including the endpoint value, and the nitrogen and oxygen gas containing phosphorus oxychloride Flow ratios range from 2:1 to 3:1, including endpoints. The function of this step is to deposit impurities on the surface of the silicon wafer to form a certain concentration, which facilitates the further diffusion of impuritie...

Embodiment 2

[0056] The flow chart of the diffusion method disclosed in this embodiment is as follows: figure 2 As shown, the specific steps are as follows:

[0057] Steps S201-S204 are the same as steps S101-S104, and will not be repeated here.

[0058] S205: Decrease the temperature in the diffusion furnace to the third temperature, and at the same time, feed nitrogen gas into the diffusion furnace for a fifth time.

[0059] Wherein, the range of the third temperature is 730°C~750°C, inclusive, the range of the fifth time is 10min~15min, inclusive, and the flow rate of nitrogen is 1000sccm~2000sccm, inclusive. If the silicon wafer is directly cooled out of the furnace after the diffusion is completed, the temperature difference will be too large. At this time, the residual thermal stress in the silicon wafer will bend or crack the silicon wafer. Therefore, in the diffusion method provided in this embodiment, after the temperature of the diffusion furnace drops to 730°C~750°C, nitrogen...

Embodiment 3

[0063] The flow chart of the diffusion method disclosed in this embodiment is as follows: image 3 As shown, the specific steps are as follows:

[0064] S301: Putting the silicon wafer into a diffusion furnace.

[0065] Wherein, the silicon wafer is a silicon wafer to be diffused in the solar cell production process.

[0066] S302: Pass oxygen into the diffusion furnace, and keep it for a fourth time.

[0067] Wherein, the fourth time ranges from 1 min to 3 min, including endpoint values. Although the step of oxidizing the silicon wafer before diffusion is eliminated, the problem that the silicon dioxide layer on the surface of the silicon wafer is too thick and affects the diffusion of impurities can be avoided, but oxygen is introduced into the diffusion furnace before the diffusion of the silicon wafer, and the formed A silicon dioxide layer with a certain thickness is used as a masking film during diffusion to reduce the damage caused by the high concentration of impuri...

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Abstract

The invention discloses solar cells and a diffusion method thereof. The diffusion method includes: placing silicon wafers in a diffusion furnace; raising inner temperature of the diffusion furnace to first temperature, introducing phosphorus-oxychloride-bearing nitrogen and oxygen into the diffusion furnace, and holding for a first time; raising the inner temperature of the diffusion furnace to second temperature, introducing oxygen into the diffusion furnace, and holding for a second time; maintain the inside of the diffusion furnace at the second temperature, stopping introduction of the oxygen into the diffusion furnace, and holding for a third time; cooling the diffusion furnace and taking out the silicon wafers after cooling. Phosphorus diffusion is boosted by high-temperature aerobic process and high-temperature anaerobic process, so that diffusion uniformity is improved and surface impurity concentration of the silicon wafers is lowered. Light absorption rate of solar cells is increased, and accordingly conversion efficiency of the solar cells is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, more specifically, to a solar cell sheet and a diffusion method thereof. Background technique [0002] A solar cell, also known as a photovoltaic cell, is a semiconductor device that converts the sun's light energy directly into electrical energy. Because it is a green product, does not cause environmental pollution, and is a renewable resource, solar cells are a new energy source with broad development prospects in today's energy shortage situation. [0003] The current production process of solar cells can be divided into the following main steps: [0004] 1. Removal of the damaged layer and preparation of the suede surface, remove the cutting damaged layer on the surface of the silicon wafer through chemical reaction, and obtain a reasonable rough surface to enhance light absorption. [0005] 2. Diffusion to make a PN junction, put the P-type silicon wafer into the diffusion furnace, and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18C30B31/06
CPCY02P70/50
Inventor 刘莉丽
Owner YINGLI GRP
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