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A kind of preparation method of photosensitive capacitor

A capacitor and photosensitive technology, applied in the field of capacitors, can solve the problem of insignificant semiconductor/insulator photocapacitance effect, and achieve the effect of improving compactness and working performance

Inactive Publication Date: 2017-06-16
HENAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Under normal conditions, the photocapacitance effect of most semiconductors / insulators is not significant

Method used

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  • A kind of preparation method of photosensitive capacitor

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Embodiment Construction

[0016] Embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0017] The photosensitive capacitor to be prepared in the present invention has a dielectric material layer 211, and the dielectric material layer adopts a photosensitive material with a small polaron effect (for example, a polycrystalline small polaron oxide raw material with a grinding purity of 99.9% rutile phase titanium dioxide, titanium barium oxide, strontium titanate, etc.). Both sides of the dielectric material layer 211 are sequentially provided with a conductive layer and an encapsulation layer, and the conductive layer is closely attached to the dielectric material layer for connecting electrodes and circuits. The encapsulation layer is used to protect the conductive layer and dielectric material layer therein, and play a role of support and fixation. In order to enable the dielectric material layer to change the dielectric constant with t...

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Abstract

The invention relates to a preparation method of a photosensitive capacitor. A photosensitive material of small polaron effect is pressed into sheets and then sintered to form ceramics, and a dielectric material layer is prepared; conductive silver slurry coatings are respectively arranged at the two sides of the dielectric material layer; two pieces of conductive glass are arranged at the two sides of the dielectric material layer, so that conductive films on the conductive glass make contact with the conductive silver slurry coatings respectively, both the conductive glass and the conductive silver slurry coatings are made of light transmitting materials, so that light can irradiate on the dielectric material layer through the conductive glass and the conductive silver slurry coatings to change the dielectric constant of the dielectric material layer; and the dielectric material layer and the conductive glass are fixed, placed in a heat treatment device, heated to 250-350 DEG C for heat treatment, and then cooled to the room temperature to obtain the photosensitive capacitor. The capacitance of the photosensitive capacitor can be adjusted by the intensity of external irradiation light, the photosensitive capacitor can serve as a frequency modulation part of different electronic devices, or can be used to prepare a photoelectric detector.

Description

technical field [0001] The invention relates to a capacitor, in particular to a preparation method of a photosensitive capacitor. Background technique [0002] Photoelectric technology has been widely used in national economy, military security, scientific research and other fields. The physical basis of optoelectronic technology is various photoelectric effects. Generally, the photoelectric effect is divided into the outer photoelectric effect and the inner photoelectric effect. The external photoelectric effect refers to the phenomenon that electrons in metals or semiconductors escape from the surface and emit outwards under the irradiation of light. It is mainly used in photoelectric tubes and photomultiplier tubes. The internal photoelectric effect refers to the electrical effect caused by the generation of electron-hole pairs inside the semiconductor under the irradiation of light. The internal photoelectric effect is more complicated, and the common ones are photoco...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/08
CPCH01L31/08H01L31/18Y02P70/50
Inventor 王志晓李国岭周锋子李立本臧国忠
Owner HENAN UNIV OF SCI & TECH