Ultraviolet temperature measuring method and apparatus for MOCVD epitaxial wafer surface temperature measurement

Abstract

An ultraviolet temperature measuring method applied to MOCVD epitaxial wafer surface temperature measurement, which belongs to the technical field of non-contact ultraviolet temperature measurement. Firstly, the thermal radiation signal intensity of an object to be measured under the selected wavelength is measured; based on the output response of a photoelectric detector, the sub-measuring range is regulated; secondly, based on the current sub-measuring range of the above step, the light source intensity matched with the gain stall of the photoelectric detector is selected; the reflectivity is measured to further acquire the emissivity; and based on the emissivity acquired in the above step, the emissivity of the measured thermal radiation signal intensity is rectified to acquire the accurate temperature of the surface of the object to be measured. According to the invention, by measuring the thermal radiation of the ultraviolet band and rectifying the emissivity, the surface temperature of the object is measured and the acquired temperature is accurate; and by adopting the single wavelength temperature measuring technology, the photoelectric response gain of the photoelectric detector and the light source intensity can be automatically regulated, thus realizing the temperature measurement with large measuring range and high accuracy.

Description

technical field [0001] The invention belongs to the technical field of non-contact ultraviolet temperature measurement, and in particular relates to a method and a device for measuring the real temperature on the surface of an epitaxial wafer used in the process growth of a metal organic chemical vapor deposition system (MOCVD). Background technique [0002] In the growth process of semiconductor thin film, the surface temperature is an important parameter to determine the quality of the thin film. It affects the thickness and warpage of the thin film surface and the growth of surface quantum wells. At present, MOCVD (metal-organic vapor deposition) is mostly used in the mass production of semiconductor thin films in industry. Therefore, it is of great significance to accurately detect and control the surface temperature of thin films in MOCVD. [0003] At present, infrared thermometers are mostly used to measure the surface temperature of thin films in MOCVD, but with the d...

AI Technical Summary

Problems solved by technology

The first method to achieve a large range is simple, but when it is applied to ultraviolet temperature measurement, a single magnification cannot meet the temperature measurement of a large range because the intensity of ultraviolet heat radiation changes too much with temperature;

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