Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Large-size whole wafer nano-impressing device and impressing method thereof

A nano-imprint, large-scale technology, applied in the direction of photolithography, optics, optomechanical equipment, etc. on the pattern surface, to achieve the effect of low defect, simple structure, simple structure and process

Active Publication Date: 2015-12-09
兰红波
View PDF8 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problem of large-size wafer-level micro-nano patterning, provide a device and method for nano-imprinting of large-size wafers, and realize high-efficiency and low-cost wafer processing on large-size substrates level graphics

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Large-size whole wafer nano-impressing device and impressing method thereof
  • Large-size whole wafer nano-impressing device and impressing method thereof
  • Large-size whole wafer nano-impressing device and impressing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0062] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention.

[0063] figure 1 It is a structural schematic diagram of the nano-imprinting device for a large-sized wafer of the present invention, which includes: a second lifting mechanism 1, a first lifting mechanism 2, a lower cavity 3, a wafer carrier 4, a wafer 5, an imprinting material 6, Sealing ring 7, mold 8, upper cavity 9, transparent glass (quartz glass) 10, exposure light source 11, vacuum pipeline 12, pressure pipeline 13; wherein, the workbench is placed at the bottom of the center of the device, and the workbench wears Through the lower cavity 3, the inside of the workbench is provided with a second lifting mechanism, and the carrier table 4 is horizontally placed inside the lower cavity 3; The bottom is connected; the wafer holder 4 is placed on the workbench; the wafer 5 is...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a large-size whole wafer nano-impressing device and an impressing method thereof. The device comprises an upper cavity and a lower cavity, the lower cavity is driven by first lifting mechanisms to move up and down to make contact with or be separated from the upper cavity, the bottom of the upper cavity is provided with an elastic mold used for impressing, a wafer bearing platform is horizontally arranged in the lower cavity, and the bottom of the wafer bearing platform is provided with a second lifting mechanism; an upper cavity air inlet which is movably connected with a pressure pipeline is formed in the cavity wall of the upper cavity, a lower cavity air inlet which is movably connected with a vacuum pipeline and the pressure pipeline is formed in the cavity wall of the lower cavity, and a wafer bearing platform air inlet which is communicated with the vacuum pipeline is formed in the wafer bearing platform; the device further comprises an exposure light source. The large-size whole wafer nano-impressing device and the impressing method thereof have the advantages that high-efficiency low-cost batched manufacturing of large-area micro-nanostructures with super large size or unsmooth substrates or fragile substrates is achieved, and an industrial-level solution is provided for manufacturing large-size wafer-level large-area micro-nanostructures.

Description

technical field [0001] The invention relates to a device for nano-imprinting of a large-sized wafer and an imprinting method thereof, in particular to a method and device for mass-manufacturing large-area micro-nano structures with high efficiency and low cost, and belongs to the technical field of micro-nano manufacturing. Background technique [0002] Nanoimprint Lithography (NIL), as a new micro-nano manufacturing technology, has high resolution and ultra-low cost compared with the current projection lithography and next-generation lithography technology NIL is at least an order of magnitude lower than that of traditional optical projection lithography) and high productivity, and its most significant advantages lie in the ability to manufacture large-area, complex three-dimensional micro-nano structures and the patterning of non-flat substrates, especially soft UV The nanoimprint process also has the potential to realize wafer-level nanoimprint on non-planar (curved, warp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/00
CPCG03F7/0002
Inventor 兰红波
Owner 兰红波
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com