QLED device with high light-emitting efficiency and preparation method thereof

Abstract

The invention discloses a QLED device with high light-emitting efficiency and a preparation method thereof. The preparation method comprises steps of: depositing a composite hole injection layer on an ITO substrate, wherein the composite hole injection layer is prepared by dispersing and uniformly stirring metallic nano particles in a hole injection layer; depositing a hole transport layer on the composite hole injection layer; depositing a quantum dot light-emitting layer on the hole transport layer; and successively depositing an electron transport layer and an electron injection layer on the quantum dot light-emitting layer and finally vapor plating the electron injection layer with a cathode in order to prepare the QLED device. A metallic nano particle surface plasma enhancement effect is applied to the QLED device and a few metallic nano particles is doped into the hole injection layer to be used as composite hole injection layer to be applied to the QLED device. Thus, the transport and radiative recombination of carriers in the QLED device are effectively promoted such that the light-emitting efficiency of the QLED device is effectively increased.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a QLED device with high luminous efficiency and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diodes (QLEDs) have received extensive attention and research in the fields of lighting and display in recent years due to their many advantages such as high brightness, low power consumption, wide color gamut, and easy processing. After years of development, QLED technology has achieved tremendous development. According to publicly reported literature, the external quantum efficiency of the highest red and green QLEDs has exceeded or approached 20%, indicating that the internal quantum efficiency of red and green QLEDs is actually close to the limit of 100%. However, most of the quantum dots used in high-efficiency QLEDs currently contain heavy metal chromium, which is highly toxic and harmful to the human body. How to avoid the use of chromium...

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Problems solved by technology

[0004] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a QLED device with high luminous efficiency and its preparation method, aiming at solving the problems of low luminous efficiency, low performance repeatability and difficulty in large-scale practical use of existing QLED devices. production problem

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