32 results about "Plasma Enhancement" patented technology

The present invention relates to an assembly for chemical plasma deposition under low pressure conditions, more specifically plasma enhanced chemical vapor deposition, comprising a support component that integrates both a waveguide and a support component in one piece, where the waveguide is incorporated within the support component.

The invention relates to a method for preparing nano graphene and a composite material thereof at low temperature. The method is mainly realized by taking metal oxide or metal salt powder as a precursor and carbon-containing gas as a carbon source and combining means such as a plasma enhancement technology. Firstly, a precursor is placed in a vacuum furnace; then vacuumizing to a background; introducing a certain proportion of carbon source gas and auxiliary gas, and keeping the gas pressure at 10-5000 Pa; performing plasma treatment on the gas in the furnace in a certain manner; raising the temperature to 150-500 DEG C at a certain heating rate, and keeping the temperature for a period of time; and then closing the carbon source gas, stopping plasmatization, and cooling to room temperature to prepare the nano graphene and the composite material thereof. The method has the advantages that the growth temperature of the graphene is low (can be as low as 150 DEG C), and the nano graphene with the superfine particle level (1-10 nm) and the graphene / metal particle composite material perfectly coated with the graphene can be prepared.

The invention discloses a perovskite narrow-band photoelectric detector based on local plasma enhancement and a preparation method thereof, and the perovskite narrow-band photoelectric detector utilizes specially-made metal nanoparticles to accurately adjust a local surface plasma resonance band of the perovskite narrow-band photoelectric detector, thereby achieving the purpose of overlapping with a perovskite target narrow-band response range. Therefore, penetrating long-wavelength incident photons and an electromagnetic field around the metal nanoparticles generate strong coupling interaction, light absorption is effectively improved through a near-field enhancement induction excitation effect, light current is remarkably enhanced, a local surface plasmon resonance band is regulated and controlled, harmonious enhancement of a detection wave band is achieved, and the detection sensitivity is improved. And the detection performance regulation and control enhancement in the spectral response range of the photoelectric detector is further realized.

The invention relates to the technical field of detection, and discloses an MCP image enhancement high-sensitivity detection system, which comprises a photoelectric cathode, which adopts a multi-quantum well structure and a surface plasma enhancement technology, is used for converting incident photons into primary electrons, and comprises a quantum well formed by gallium arsenide and gallium aluminum arsenide; a microchannel plate for amplifying primary electrons generated from the photocathode; the microchannel plate is coated with a superconducting thin film so as to reduce noise and improve electronic gain; various types of sensors include optical sensors, thermal imaging sensors, acoustic sensors, and chemical sensors. By adopting a multi-quantum well structure and a surface plasma enhanced photoelectric cathode, the spectral response and photoelectric conversion efficiency are remarkably improved, and the sensitivity and response speed of the system to non-specific wavelengths are enhanced. Meanwhile, the microchannel plate coated with the superconducting thin film effectively reduces the noise level, improves the signal definition and the image quality, and solves the high-gain limitation of a traditional system.

The application discloses a kind of secondary batteries based on light-assisted plasma enhanced photoelectric performance.It uses plasma complex lithium-containing semiconductor material or lithium-free semiconductor material with plasma effect as positive electrode.The plasma complex lithium-containing semiconductor material is obtained by doping lithium-containing semiconductor material with nano material with plasma effect, and the nano material with plasma effect and semiconductor material have completely overlapping or partially overlapping light response range.Positive electrode captures incident light and generates plasma on the surface of positive electrode to increase the total number of external use electrons and improve the specific capacity of the battery.The secondary battery of the application can effectively reduce the battery interface resistance and increase the electronic conductivity of electrode material under the effect of plasma enhancement, thereby improving the battery capacity.

The invention relates to a transformer oil circulation plasma enhancement method and system, a dielectric barrier discharge plasma device is arranged in an oil duct of a transformer oil tank, the ionic wind effect generated by the dielectric barrier discharge plasma device is used for driving oil to accelerate flow circulation, and therefore traditional mechanical oil pump driving is replaced. The high-voltage electrode of the dielectric barrier discharge plasma device is completely wrapped in the dielectric barrier layer so as to ensure discharge safety, the control unit adaptively adjusts the discharge intensity through the sensor, and rapid cut-off protection is carried out when abnormity occurs. The dielectric barrier discharge plasma device synchronously decomposes fault gas in oil in the process of driving the oil to accelerate circulation, and integration of dual functions of transformer oil cooling and insulation purification is achieved. The device does not need moving parts, is low in power consumption, long in service life, intelligent and suitable for a high-voltage-class oil-immersed transformer.

The laser-induced plasma enhanced welding process comprises the following steps that firstly, active gas and protective gas are synchronously conveyed through a coaxial gas path composite gas supply system, secondly, a pulse laser beam is adopted to act on the surface of a workpiece, and controlled plasma is induced to be generated, and thirdly, laser-induced plasma enhanced welding is conducted. A plasma emission spectrum is collected in real time through a spectrum diagnosis unit, and the characteristic spectral line intensity and broadening characteristics are detected; and 4, the laser power, the pulse frequency and the gas component proportion are dynamically adjusted based on the spectral analysis result. By adopting a coaxial gas path composite gas supply system and arranging an inner-layer active gas channel and an outer-layer protective gas channel, an axial velocity gradient composite gas curtain is formed, plasma expansion is dynamically restrained, and the form of plasma is accurately controlled, so that the problem that the form of the plasma is difficult to accurately control is solved; the energy loss caused by the plasma shielding effect is reduced, and the utilization rate of laser energy is improved.

The present invention proposes a method for calculating the interior ballistic characteristic parameters of a mixed charge under plasma ignition. The method includes determining the discharge parameters of a pulse power supply; establishing a formula for the gunpowder burning rate under plasma enhancement; determining the shape functions of two gunpowders; establishing a projectile motion equation and an electrothermal chemical launch interior ballistic equation; substituting the input electrical energy into the electrothermal chemical launch interior ballistic equation, combining the gunpowder burning rate formula and the shape function to perform a time-advancing solution, and finally using the projectile motion equation and the electrothermal chemical launch interior ballistic equation to obtain the internal pressure and projectile velocity curve during the projectile's discharge process. The present invention solves the problem of existing electrothermal chemical launch interior ballistic models that only consider a single charge structure, and can quickly and effectively calculate the internal pressure and projectile velocity curve during the discharge process of an electrothermal chemical launch projectile with a mixed charge structure.

The present invention discloses a composite solder and a preparation method thereof, a packaging method, and a composite solder preparation method comprising the following steps: providing a basic solder, wherein the basic solder composition comprises 20% to 35% of metallic copper, 55% to 70% of metallic silver, and 10% to 15% of an auxiliary agent, wherein the mass ratio of metallic silver to metallic copper is (20 to 35): (50 to 70); placing metallic silver and metallic copper in an atmosphere containing a carbon source gas for plasma chemical vapor deposition treatment, preparing a prefabricated solder, and mixing the prefabricated solder and the auxiliary agent. Plasma enhanced chemical vapor deposition is used to in-situ grow nanographene on a basic solder containing metallic silver and metallic copper, the grown graphene is dispersedly distributed, and fine crystal strengthening can solve the problem that graphene is easy to agglomerate and hinder the flow of solder to cause hole formation, and the prepared composite solder can effectively improve the welding strength and realize the gradient transition of thermal expansion coefficient between ceramic-solder-metal.

The present invention relates to a method for radiation enhancement based on non-uniform plasma. This method aims to overcome the relatively simple physical models of existing plasma enhancement technologies and the lack of general discussion on how to achieve optimal enhancement using non-uniform plasma. The method is based on a plasma-enhanced small electric antenna, which includes a spherical plasma shroud and a small electric antenna located within the shroud. Furthermore, the plasma within the shroud is non-uniformly distributed along the radius of the shroud. The radiation enhancement method is as follows: the plasma density and the size of the plasma shroud are adjusted to meet the following conditions, thereby enhancing the radiation of the small electric antenna with the non-uniform plasma.

Showerhead assemblies for semiconductor manufacturing processing chambers and semiconductor manufacturing processing chambers using the showerhead assemblies are described. The showerhead assemblies comprise a backing plate with an embedded heater and a faceplate. The embedded heater has a radius sufficient to located the heater over a sidewall of the processing chamber and reduces temperature non-uniformity of a wafer during processing.

The invention provides a simulation method and system considering energy conversion of a plasma ignition system, and belongs to the technical field of plasma-assisted combustion numerical simulation. The method comprises the following steps: acquiring combustion parameters and kinetic parameters in a plasma ignition simulation process; classifying plasma dynamics and combustion dynamics according to reaction types, and performing global sensitivity analysis based on combustion parameters and kinetic parameters; determining key substances by adopting a plasma thermochemical unstable model and energy decomposition according to the result of the global sensitivity analysis; and processing the key substance by using an element-based plasma global flux model, determining a specific global path and dynamic effects of a chemical reaction in different time periods, further determining a fuel decomposition path, and quantifying the dynamic enhancement process of plasma ignition. The problem of explaining the plasma enhanced ignition rule is effectively solved, and further application of the PAC technology is promoted.

A method of plasma processing that includes: flowing a first gas and a second gas into a plasma processing chamber including a substrate, the second gas including a film precursor; at a first time instance, while maintaining the flow of the first gas, shutting off the flow of the second gas into the plasma processing chamber; and at a second time instance after the first time instance, powering an electrode of the plasma processing chamber to generate a plasma within the plasma processing chamber, the surface of the substrate being exposed to the generated plasma to form a film over the substrate.

The invention discloses a physical vapor deposition (PVD) coating method for a broken bridge aluminum profile, which is characterized in that a high-performance composite coating is formed on the surface of the profile through precise pretreatment, optimized multi-level PVD deposition and optional plasma polymerization post-treatment. Wherein the deposition process is completed in a special PVD coating system, and the system ensures that a complex-section profile with the length of 6 meters obtains a uniform film layer through the design of a planet carrier capable of revolving and rotating and a plasma enhancing device. According to the method, the problems of uniformity and binding force of long building materials treated through a traditional PVD technology are solved, the obtained coating has excellent hardness (larger than or equal to HV1500), corrosion resistance (neutral salt mist is larger than or equal to 1000 hours) and rich decoration effects, the whole process is environmentally friendly, and an innovative surface solution is provided for high-end broken bridge aluminum doors and windows.

Showerhead assemblies for semiconductor manufacturing processing chambers and semiconductor manufacturing processing chambers using the showerhead assemblies are described. The showerhead assemblies comprise a backing plate with an embedded heater and a faceplate. The embedded heater has a radius sufficient to located the heater over a sidewall of the processing chamber and reduces temperature non-uniformity of a wafer during processing.

The application discloses a kind of double-layer silicon dioxide structure's plasma enhanced fluorescence miRNA nanoprobe and its preparation method and application.The application uses the distance between the separation fluorescent group and nanometer gold particle by surface modification amino-modified silica coating layer, so as to achieve plasma enhancement effect;Then using the extinction peak generated when metal nanoparticle local surface plasmon resonance and the mutual overlap of fluorescence group (FITC or RITC) excitation peak or absorption peak, so as to further optimize plasma enhancement effect, and then prepare the plasma enhanced fluorescence miRNA nanoprobe with good stability, specificity and sensitivity, which can be used for quantitative detection miRNA-21 and miRNA-150 in T cell, for monitoring its differentiation state, for monitoring T cell phenotype and providing promising tool for promoting immunotherapy.

The invention relates to a plasma enhanced photoelectric detector based on a GaN / TiO2 nano array and a preparation method thereof, and the method comprises the steps: firstly preparing a TiO2 nano column array on an N-type Si substrate, and enabling the TiO2 nano column array to be inversely soaked in metal Ga, so as to enable the TiO2 nano column array to be covered by a Ga2O3 film; and after the quality of the Ga2O3 film is improved through oxygen annealing, the Ga2O3 film is placed in the NH3 atmosphere to be annealed, and the GaN film is obtained. And then adding silver nanoparticles, covering graphene on the particles, and finally preparing a cathode and an anode to prepare the device. According to the structure, high specific surface area and carrier transmission efficiency of the GaN / TiO2 nano array are utilized, and a plasma enhancement effect is combined, so that efficient detection of ultraviolet light and visible light is realized. The graphene covering layer enhances the plasma effect of the silver nanoparticles and provides good conductivity, and the electrodes ensure effective electron injection and hole collection to form current. The photoelectric detector has the advantages of high sensitivity, low dark current, high response speed and the like, and is suitable for ultraviolet and visible light detection application.

This application relates to the field of semiconductor manufacturing and discloses a photodetector and its fabrication method, comprising: a substrate; a first cladding layer located on the upper surface of the substrate; a first waveguide located within the first cladding layer, the first waveguide and the upper surface of the first cladding layer being flush; graphene located on the upper surfaces of the first cladding layer and the first waveguide; a second waveguide located on the upper surface of the graphene; the second waveguide and the first waveguide forming a waveguide structure. The graphene is located between the first and second waveguides, and the first and second waveguides form the waveguide structure, that is, the graphene is located within the waveguide structure. The graphene is closer to the optical field center of the waveguide structure, which can enhance the interaction between the graphene and the optical field and enhance the optical absorption of the graphene. This application eliminates the need for plasma enhancement or increasing the area of ​​the graphene, thus avoiding optical losses caused by plasma structures and avoiding the limitation on the integration density of the photodetector imposed by large-area graphene.

The invention discloses a helium-assisted low-temperature thin film deposition method and device, and belongs to the technical field of thin film deposition. The method mainly comprises the steps that when reaction gas is introduced into a deposition cavity loaded with a to-be-deposited substrate, helium with the preset flow is introduced into the deposition cavity at the same time; helium and reaction gas are excited through a radio frequency electric field to generate mixed plasmas, low-temperature thin film deposition is carried out in a deposition cavity of the mixed plasmas, helium is preferentially ionized under the action of the radio frequency electric field to generate helium high-energy electrons, the helium high-energy electrons provide energy for dissociation of the reaction gas into the plasmas, and in addition, the reaction gas is separated into the mixed plasmas. Local heat generated in the helium plasma discharging process is conducted to the cavity outer wall cooling device through high thermal conductivity of helium high-energy electrons, and therefore temperature fluctuation in the cavity is reduced. The plasma enhancement and energy transfer characteristics of helium are utilized, and on the premise that the low-temperature deposition temperature is guaranteed, the deposition rate and the film performance are synchronously improved.

The invention relates to the technical field of loom part production, in particular to an efficient grinding device for loom part production, which comprises a mounting frame, a height adjusting mechanism is mounted above the mounting frame, a grinding machine and an ion emitter are mounted at the working end of the height adjusting mechanism, and an ionization device is fixedly mounted on the rear side of the mounting frame. An ion tube is connected between the output end of the ionization device and the input end of the ion emitter, a recycling and smashing mechanism is installed below the ionization device, the recycling end of the recycling and smashing mechanism is close to one side of a part to be machined, and an electrode device is fixedly installed on the side wall of the ionization device. All-posture grinding of the steel collar is achieved through five-axis linkage, chippings are recycled in real time and subjected to closed-loop treatment to form plasma raw materials, pollution is reduced, and meanwhile resources are recycled; the plasma strengthening technology synchronously cleans the surface and forms a wear-resistant coating, so that the performance is remarkably improved; and air return circulation and graphite electrode design ensure stable ionization and reduce energy consumption.

The invention discloses a carbon capture conversion and plasma enhanced biomass and energetic waste thermal conversion hydrogen production system and method, and aims to improve biomass gasification hydrogen production efficiency, reduce generation of byproducts, reduce greenhouse gas emission and realize continuous and stable operation of the system. The system mainly comprises a biomass continuous feeding unit, an energetic waste batch feeding unit, a water vapor generating and conveying unit, a thermal conversion reactor, a dust removal unit, a plasma enhanced catalysis unit, a liquid product separation and collection unit and a hydrogen separation and storage unit. The plasma enhanced catalysis unit is a core part, and the synergistic effect of the plasma reactor and the multifunctional catalyst not only promotes the reforming reaction of biomass volatile matter and water vapor, but also can enhance hydrogen production through a carbon capture technology and reduce CO2 emission at the same time. The unit comprises two sets of plasma power supplies and reactors which alternately work, one set of plasma power supplies and reactors can perform reforming reaction while the other set of plasma power supplies and reactors can perform catalyst regeneration, and plasmas also have a strengthening effect on CO2 desorption, dry reforming and catalyst regeneration in a regeneration stage, so that continuous operation of the system is ensured. The device can be widely applied to efficient gasification hydrogen production of various biomass energy sources, meanwhile, various new energy sources can be flexibly used for power generation to supply power to the plasma reactor, energy conservation and emission reduction are achieved while the biomass energy source conversion efficiency is improved, and efficient cleaning treatment and resource utilization of solid waste are achieved.

The present disclosure provides methods and apparatus that facilitate the formation of high-quality carbon gapfill structures and that address the issues related to conventional carbon gapfill methods. In certain embodiments, the carbon gapfill methods and apparatus described herein include plasma enhanced CVD (PECVD) or flowable CVD (FCVD) processes to gapfill structures with high-quality, and stable carbon films.

This invention relates to an AgNPs-Bi3NbTiO9 composite SERS substrate material, its preparation method, and its application in the detection of organic molecules, belonging to the field of surface-enhanced Raman spectroscopy and functional composite materials technology. This invention prepares a Bi3NbTiO9 support via a molten salt method and combines it with an ascorbic acid in-situ reduction strategy to uniformly load silver nanoparticles onto its surface, achieving a synergistic effect of plasma enhancement and interfacial charge transfer. The prepared material exhibits good structural stability and a high-density "hot spot" distribution, demonstrating excellent Raman enhancement performance for 4-mercaptobenzoic acid molecules. Experimental results show that this composite substrate has stronger signal enhancement and better uniformity than a single Ag substrate, achieving highly sensitive detection of target molecules at the ppm level in river water. The material preparation method described in this invention is simple, reproducible, and suitable for the rapid detection of trace organic pollutants in environmental water bodies.

The invention belongs to the technical field of thin film material preparation, and particularly relates to a method for large-area rapid deposition of a Ru-containing thin film and application. The deposition method of the Ru-containing thin film comprises the steps of substrate pretreatment, surface activation treatment, Ru-containing precursor pulse introduction and reaction gas introduction. Then, the steps of surface activation treatment, Ru-containing precursor pulse introduction and reaction gas introduction are cyclically repeated, and the metal Ru thin film is prepared; or in the cyclic and repeated deposition process, periodic oxidation enhancement treatment or plasma enhancement treatment is introduced, the oxidation state and performance of the thin film are optimized, and the ruthenium oxide thin film is prepared. According to the method, the Ru-containing thin film is efficiently and uniformly deposited on the substrate in a large area by optimizing the technological parameters and the flow, the method can be applied to a semiconductor device, and the problems that in the prior art, the Ru-containing thin film grows slowly and is poor in uniformity, and rapid large-area preparation is difficult are solved.

This invention discloses a method for preparing a low-stress superhard diamond-like carbon (DLC) coating based on composite plasma enhancement. The method employs a vacuum coating apparatus combining a magnetically controlled cathode arc source and a closed-loop unbalanced magnetron sputtering source. The plasma ionization rate is increased through a closed magnetic circuit, and large particles are dually suppressed by a dynamic scanning magnetic field and bent-tube filtration. The coating is a five-layer nano-gradient composite structure, consisting of a metal activation layer, a carbonitride gradient transition layer, a doped stress control layer, a tetrahedral amorphous carbon (ta-C) superhard framework layer, and a fluorinated diamond-like carbon (F-DLC) lubricating layer, sequentially from the substrate to the surface. The preparation process involves workpiece cleaning and furnace loading, ion cleaning and etching, gradient deposition of each functional layer, and cooling before unloading. The step-by-step deposition achieves compositional and stress gradient control, making it suitable for high-end applications such as precision molds, automotive engine parts, and 3C wear-resistant components.

The present disclosure relates to plasma-enhanced processing for semiconductor manufacturing and related processing chambers, methods, and systems. In one or more embodiments, a method of substrate processing comprises the steps of igniting a plasma, flowing a deposition precursor to interact with the plasma, and flowing the deposition precursor over a substrate located in a process volume to form a layer on the substrate. The method comprises the steps of maintaining the process volume at a pressure of less than 100 mTorr, and heating the substrate to a target temperature of 500 degrees Celsius or less.

A novel diamond Resin Composite (DRC) includes 30-60 wt % diamond particles and a multi-monomer resin blend, enhanced with select photoinitiators and coinitiators. The diamond particles can be synthetic, acquired through high-pressure high-temperature (HPHT), or chemical vapor deposition (CVD) methods or hot-filament chemical vapor deposition (HFCVD) or DC plasma enhanced chemical vapor deposition (DC-PECVD) methods. The DRC contains fluorine doping of diamonds, achieved via reactive gas precursors or fluorine-rich plasma. Supplementary agents enrich the composite's versatility. The diamonds within the DRC are diverse in size, shape, and surface treatments, notably featuring terminations by hydrogen, oxygen, or fluorine. In dental restorations, diamonds are combined with a light-sensitive resin, and the mixture undergoes light-induced photopolymerization.

The application discloses a low-power-consumption all-optical phase change memory based on a plasma enhancement effect, comprising a silicon-based planar optical waveguide, characterized in that a phase change ring structure capable of reversibly changing from a crystal state to an amorphous state under the evanescent field coupling effect of the waveguide is arranged on the waveguide, the phase change ring structure is clamped between a metal disc and a metal ring, a concentric circle structure formed by the phase change ring structure, the metal disc and the metal ring is integrally located on the upper surface of the waveguide or is semi-embedded in the waveguide or is completely embedded in the waveguide, the phase change ring structure is a phase change layer Ge2Sb2Te5 or Ge2Sb2Se4Te, has at least two stable states, namely a crystal state and an amorphous state, and the two states have obviously different absorption coefficients for probe light, and the phase change is uniform, the switching speed is faster and the power consumption is lower.

The invention discloses a plasma enhanced fluorescence miRNA nano probe with a double-layer silicon dioxide structure as well as a preparation method and application of the plasma enhanced fluorescence miRNA nano probe. According to the invention, the distance between the fluorophore and the gold nanoparticles is separated by using the surface-modified aminated silicon dioxide coating layer, so that the plasma enhancement effect is achieved; an extinction peak generated during local surface plasmon resonance of the metal nanoparticles is mutually overlapped with an excitation peak or an absorption peak of a fluorophore (FITC or RITC), so that the plasma enhancement effect is further optimized, and the plasma enhanced fluorescent miRNA nanoprobe with good stability, specificity and sensitivity is prepared. The kit can be used for quantitatively detecting miRNA-21 and miRNA-150 in T cells and monitoring the differentiation state of the T cells, and a promising tool is provided for monitoring the phenotype of the T cells and promoting immunotherapy.

To provide: methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process; and methods of forming a silicon oxide film selectively either over horizontal surfaces of a non-planar substrate or over vertical surfaces of a non-planar substrate.SOLUTION: The methods include: forming a topographically selective silicon oxide film on a substrate by a cyclical plasma-enhanced deposition process; forming a silicon oxide film by a plasma enhanced atomic layer deposition (PEALD) process or a cyclical plasma-enhanced chemical vapor deposition (cyclical PECVD) process; and forming a silicon oxide film selectively either over horizontal surfaces of a non-planar substrate or over vertical surfaces of a non-planar substrate.SELECTED DRAWING: Figure 2