109 results about "Plasma Enhancement" patented technology

The invention relates to a graphene and metal nanoparticle composite film preparation method. The graphene and metal nanoparticle composite film mainly comprises a first graphene film layer (1), a second graphene film layer (3), a third graphene film layer (5), a first metal nanoparticle film layer (2) and a second metal nanoparticle film layer (4). The graphene film layers and the metal nanoparticle film layers are overlapped alternatively to form the graphene and metal nanoparticle composite film and then are composited with a base material (6) into a whole serving as a molecular Raman signal detection substrate or a transparent efficacy-enhancement solar cell electrode. The graphene and metal nanoparticle composite film has characteristics of transparency, conductivity, surface plasma enhancement and the like, can be used as the molecular signal detection substrate or the transparent solar cell electrode having a trapping effect, and is expected to be applied to surface Raman scattering enhancement, photovoltaic efficacy enhancement or other related fields widely.

A method for depositing a nanostructured coating comprising chromium or a copper-chromium mixture on a workpiece. The workpiece may comprise a hollowed structure such as a rocket or jet engine combustion chamber liner. The method comprises providing a magnetron and an external sputter target material comprising chromium or a copper-chromium composite and effecting a magnetron sputter deposition to deposit a substantially uniform nanostructured coating comprising said sputter target material on said workpiece. The method may include plasma enhancement wherein a filament is utilized to produce a plasma that effects an ion bombardment on the workpiece during the magnetron sputter deposition process. The invention also includes the nanostructured coatings deposited by these methods and workpieces coated thereby.

A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.

The invention discloses a low temperature polycrystalline silicon thin film transistor making method, firstly forming a polycrystalline silicon thin film, a grid insulating layer and a grid on a substrate surface, successively forming a source and a drain around the gird, then making two plasma enhancement chemical gas phase deposition processes to respectively form a silicon nitride layer and a silicone layer with tetraethoxy silane as the principal covering the grid and the polycrystalline silicon thin film surface, and finally forming a contact hole above the source and drain, respectively and filling an electric conduction layer to connect with them, respectively.

The invention discloses a preparation method for a resistive random access memory. The resistive random access memory comprises a bottom electrode, a resistance change dielectric layer material and a top electrode which are assembled in sequence. Preparation of the resistance change dielectric layer material includes the following steps that firstly, a first precursor, first inert gas, a second precursor and second inert gas are fed into a reactor in order, and a monolayer metallic oxide film is deposited on the bottom electrode through a cycle of hot atomic layer deposition; secondly, a plasma enhancement process is carried out on the film; finally, the steps are carried out circularly and alternately. In the preparation process of a resistance change dielectric layer, a brand new in-situ plasma enhancement hot atomic layer deposition technology is brought in, so the surface appearance and defects of the metallic oxide film can be adjusted on a large scale; the resistive random access memory obtained through the preparation method can achieve precision control over device resistance switching characteristics to enable the device switch ratio and erase/write voltage to be adjusted, and has excellent resistance change stability.

The invention discloses a method for preparing a graphene film on a nonmetallic substrate at low temperature. By adopting the method disclosed by the invention, a plasma source is introduced to the graphene film preparation process by using a technology of chemical vapor deposition method to prepare a uniform graphene film on the non-catalytic non-metallic substrate, the technology for preparing the graphene by means of traditional chemical vapor deposition method is improved, the direct growth of the graphene on the surface of a semiconductor base material and an insulator medium base material are achieved to realize target application, the shortcoming that the uniform and high-quality graphene film on a curved surface or a surface with a three-dimensional structure cannot be prepared by using the traditional method is overcome, and the subsequent necessary metal etching and graphene transfer steps during graphene preparation by the traditional chemical vapor deposition method are eliminated; as plasma enhancement effect is utilized, the method disclosed by the invention effectively reduces graphene preparation temperature, not only is energy saving, but also is practical, simultaneously, the method reduces working procedures, reduces cost, and has a pretty good application prospect in the aspects of preparing a transparent electrode material and constructing an electronic component and a photoelectron component.

The invention discloses a light-emitting device and a preparation method thereof. The light-emitting device comprises, from the bottom up, a substrate, a pixel electrode, a light-emitting layer, a charge transport layer and a top electrode, wherein the upper surface of the charge transport layer is distributed by metal nanoparticles. By blending the metal nanoparticles with the charge transport material, the metal nanoparticles are gathered on the surface of the charge transport layer of the light-emitting device, thereby realizing control of space between the metal nanoparticles and the light-emitting layer easily and effectively, and furthermore, improving the performance of the light-emitting device by effectively utilizing a surface plasma enhancement effect of the metal nanoparticles.

The invention discloses a three-terminal parallel polymer solar cell based on metal nanoparticle doping and a preparation method of the solar cell, and belongs to the technical field of polymer solar cells. The solar cell sequentially consists of ITO (Indium Tin Oxide) conductive glass serving as a substrate and a cathode, a TiO2 electronic transmission layer, a PSBTBT:PC70BM:NPs active layer, an MoO3 hole transmission layer, an Ag anode, a WO3 hole transmission layer, a P3HT:PC70BM:NPs active layer, an LiF electronic transmission layer and an Al cathode, wherein a mass ratio of the P3HT:PC70BM:NPs active layer is 1:1:(0.02-0.05), and NPs represents Au or Ag nanoparticles. According to the solar cell and the preparation method, two subcells form a parallel structure, light absorbing ranges of active layers of the subcells are complementary, metal nanoparticles are doped in the active layer of each subcell, and a utilization ratio of sunlight by the solar cell is increased by utilizing a plasma enhancement effect nearby the metal nanoparticles, so that the performance of the solar cell is improved.

The invention relates to microelectronics, more particularly, to methods of manufacturing solid-state devices and integrated circuits utilizing microwave plasma enhancement under conditions of electron cyclotron resonance (ECR), as well as to use of plasma treatment technology in manufacturing of different semiconductor structures. Also proposed are semiconductor device and integrated circuit and methods for their manufacturing. Technical result consists in improvement of reproducibility parameters of semiconductor structures and devices processed, enhancement of devices parameters, elimination of possibility of defects formation in different regions, and speeding-up of the treatment process.

The invention relates to a method of making low temperature polycrystalline silicon thin film transistor (LTPS TFT), firstly forming a polycrystalline silicon layer containing a channel region, successively making first and second plasma enhancement chemical gas phase deposition procedures so as to in sequence form a silicon oxide layer with tetraethyl silicon hydroxide as the principal and a compound grid insulating layer composed of a silicon nitride layer, and finally forming a grid electrode and source/drain of the LTPS TFT.

The invention discloses a surface plasma enhancement-based nano laser, belongs to the fields of micro-nano optics and photoelectronics, and particularly relates to a nanowire laser. According to the solving scheme, an insulating medium with a certain thickness is firstly sputtered on the surface of a zinc oxide nanowire as a buffer layer, so that the insulating medium evenly coats the surface of the nanowire; and a metal film layer is sputtered, and evenly coats the surface of an insulating layer to form the surface plasma laser of an annular mechanism of the nanowire/insulating medium/metal film. The surface plasma enhancement-based nano laser has the advantages of being small in volume, simple in structure, high in reliability and the like; and a bran-new technical approach is provided for improvement of the performance of the nano laser.

The invention discloses an energy saving preparation method for an aluminum electrolytic capacitor anodic aluminum foil and belongs to the field of aluminum electrolytic capacitors. The energy savingpreparation method comprises the steps that an aluminum metal organic compound is used as a precursor by utilizing a vapour deposition method supplemented by plasma enhancement, an aluminium oxide dielectric medium is grown on the surface of a corroded aluminum foil and then is subjected to high-temperature heat treatment, then anodic oxidation, annealing and filling formation are performed, and the aluminum electrolytic capacitor anodic aluminum foil is obtained. According to the energy saving preparation method for the aluminum electrolytic capacitor anodic aluminum foil, by means of the vapour deposition technology supplemented by plasma, a layer of Al2O3 can be rapidly and evenly deposited on the surface of the corroded foil directly, compared with a traditional water treatment method,conversion by the strong electric field action is not needed, therefore, the energy consumption in the anodic oxidation process is reduced by 33.8%-66.2%.

The invention relates to a method for preparing a hydrogen-containing diamond-like carbon film, relating to diamond-like carbon films. The preparation method of the hydrogen-containing diamond-like carbon film comprises the following steps of: placing a substrate with a front surface over against a source electrode into a plasma enhancement type chemical vapor deposition growth cavity, and cleaning the plasma enhancement type chemical vapor deposition growth cavity and the surface of the substrate in a sputtering way by using plasmas; vacuumizing the plasma enhancement type chemical vapor deposition growth cavity, accessing a hydrogen-containing gas, regulating working pressure and radio frequency power, and growing the hydrogen-containing diamond-like carbon film; after the growth is closed, stopping introducing the hydrogen-containing gas, and completely extracting a tail gas so as to obtain the hydrogen-containing diamond-like carbon film. The plasma enhancement type chemical vapor deposition method which reversely places the substrate into the growth cavity parallel to the source electrode and then regulates the distance between the substrate and the source electrode and changes the working pressure and the radio frequency power can modulate an optical band gap of the diamond-like carbon film in a wider range, obviously enhance the growth rate of the diamond-like carbon film and meet the requirements for future application of the diamond-like carbon film.

The invention discloses a preparation method of a compressor blade coating and a surface modifier. The preparation method comprises the following steps: putting a blade into the vacuum chamber of the surface modifier and vacuuming, and connecting a first arc source, a second arc source, an MEVVA ion source, a kaufmann ion source and a nitrogen source to the vacuum chamber; cleaning the surface of the blade by use of the kaufmann ion source; performing ion injection on the surface of the blade by use of the MEVVA ion source; coating the surface of the blade with a Ta-Cr-Al film by use of the first arc source and the second arc source; depositing a (Ta, Cr, Al)*N film on the surface of the blade by use of the first arc source, the second arc source and the nitrogen source; and orderly and repeatedly completing coating. According to the preparation method of the compressor blade coating, the problem of poor deposition uniformity of the complex-structure film of the blade is improved by use of cathode magnetic filtration and plasma enhancement technologies; and meanwhile, the high temperature corrosion resistance and the erosion resisting capacity of the blade surface are improved by adopting a novel Al doped Ta-Cr-N nano multi-layer film.

The invention relates to a preparation method of a low-temperature multi-component composite coating based on a plasma enhancement and rare earth modification technology. The method is characterized by comprising the following steps of: 1) in a process of preparing a rare earth modified multi-component composite coating, performing the preparation process (ion plating) of the rear earth modified multi-component composite coating in gas discharge and arc discharge through a set of plasma enhanced coating device; performing omnibearing bombardment on a workpiece by use of ions in a coating technology; and soaking the workpiece in the plasma to increase the binding force of the coating and the frictional wear performance and improve the binding force, wear resistance and oxidation resistance of the coating; and 2) in the process of preparing the rare earth modified multi-component composite coating, performing low-temperature deposition at a temperature of 200-400 DEG C to form a low-temperature multi-component composite coating based on the plasma enhancement and rare earth modification technology and having high hardness, good binding force and long service life under low-temperature conditions. According to the invention, by adopting the plasma enhanced coating and rare earth modification technology, the product performance is remarkably improved, and the service life is prolonged by more than twice over an uncoated shuttle of a sewing machine.

The invention discloses a secondary airtightness sealing method of a quantum dot On-chip white light LED. The method comprises steps of fixing a blue light chip on the bottom of an LED support; through the low-temperature deposition technology including the plasma enhancement chemical vapor deposition or atomic layer deposition, deposing waterproof and oxygen-proof transparent thin film layers onthe bottom and the inner side wall of the LED support; mixing quantum dots and transparent sealing glue into quantum dot sealing glue colloid and coating the interior of the LED support with the quantum dot sealing colloid; after carrying out heating solidification, gluing ultraviolet curing glue on the solidified quantum dot fluorescent colloid and covering the solidified quantum dot fluorescentcolloid with a glass sheet; and then carrying out ultraviolet curing, thereby finishing the secondary airtightness sealing of the quantum dot On-chip white light LED. According to the invention, waterand oxygen in the air can be further isolated; a problem of poor sealing airtightenss of the current LED device is effectively solved; and high light emitting efficiency and high stability of the quantum dot On-chip white light LED are achieved.

The invention discloses a tunable, high-resolution and multi-band enhanced plasma generating device, and relates to the technical field of low-temperature plasma application. The invention aims to solve the problems that an existing multi-band signal transmission device is low in transmission efficiency and needs to be used in cooperation with a signal amplifier, and a single-layer plasma enhancement device is poor in band-pass frequency characteristic. N plasma covers are coaxially nested, and the N plasma covers are sequentially a first plasma cover, a second plasma cover to an N plasma cover from inside to outside; an antenna system is located in the cover of the first plasma cover; a dipole antenna is used for emitting a plurality of target waveband electromagnetic waves or receiving target waveband electromagnetic waves input by the background electromagnetic field through the N plasma covers; each plasma cover enhances the intensity of the target waveband electromagnetic wave signals emitted by the dipole antenna or extracts and enhances the target waveband electromagnetic wave signals from the background electromagnetic field, and the enhancement range is that the logarithmic gain of the power of the signals emitted by the N plasma covers is greater than or equal to 10dB. The device disclosed by the invention is used for enhancing signals.

A low resistance middle-of-line interconnect structure is formed without liner layers. A contact metal layer is deposited on source/drain regions of field-effect transistors and directly on the surfaces of trenches within a dielectric layer using plasma enhancement. Contact metal fill is subsequently provided by thermal chemical vapor deposition. The use of low-resistivity metal contact materials such as ruthenium is facilitated by the process. The process further facilitates the formation of metal silicide regions on the source/drain regions.

A method for producing a disk shaped workpiece with a dielectric substrate includes treatment in a plasma process volume between two electrode faces bounding a high-frequency plasma discharge. One electrode face is of dielectric material and is at a high-frequency potential with a varying distribution along the face. The other electrode face is metallic. Reactive gas is introduced into the process volume through an aperture pattern. The dielectric substrate, before treatment, is at least regionally coated with a layer material to whose specific resistance applies: 10⁻⁵ Ωcm≦≦10⁻¹ Ωcm, and to the resulting surface resistance R_S of the layer applies: 0<R_S≦10⁴ Ω. Subsequently, the coated substrate is positioned on the metallic electrode face and is etched or coated reactively under plasma enhancement in the plasma process volume.

A semiconductor manufacturing process for depositing a tungsten silicide film on a substrate includes deposition of a tungsten silicide nucleation layer on the substrate using a (CVD) process with a silane source gas followed by deposition of the tungsten silicide film with a dichlorosilane source gas. This two step process allows dichlorosilane to be used as a silicon source gas for depositing a tungsten silicide film at a lower temperature than would otherwise by possible and without plasma enhancement. Tungsten silicide films deposited by this process are characterized by low impurities, good step coverage, and low stress with the silicon substrate.

The invention is a method for realizing electromagnetic wave functional device based on metal micro-nano structure, firstly according to the requirement of the required functional device for outgoing light field, designing substrate material and metal layer structural parameters, and according to the diffraction theory, finding the phase relation of the surface of the functional device; then using the optical axis of the functional device as a center to arrange metallic through hole, and according to the requirement for surface plasma enhancement, arranging a plurality of grooves or concave holes on two sides of or around the through hole, according to the directional requirement of the outgoing light field, calculating the structural parameters of each groove or concave hole; and finally with the depth trace of the grooves or concave holes as a period, repeating them, thus composing the metal micro-nano structural array functional device. The invention breaks through the restriction of diffraction limit and provides an important means for nano optical and nano electronic researches.