9 results about "Plasma Enhancement" patented technology

The application discloses a kind of secondary batteries based on light-assisted plasma enhanced photoelectric performance.It uses plasma complex lithium-containing semiconductor material or lithium-free semiconductor material with plasma effect as positive electrode.The plasma complex lithium-containing semiconductor material is obtained by doping lithium-containing semiconductor material with nano material with plasma effect, and the nano material with plasma effect and semiconductor material have completely overlapping or partially overlapping light response range.Positive electrode captures incident light and generates plasma on the surface of positive electrode to increase the total number of external use electrons and improve the specific capacity of the battery.The secondary battery of the application can effectively reduce the battery interface resistance and increase the electronic conductivity of electrode material under the effect of plasma enhancement, thereby improving the battery capacity.

The invention relates to a transformer oil circulation plasma enhancement method and system, a dielectric barrier discharge plasma device is arranged in an oil duct of a transformer oil tank, the ionic wind effect generated by the dielectric barrier discharge plasma device is used for driving oil to accelerate flow circulation, and therefore traditional mechanical oil pump driving is replaced. The high-voltage electrode of the dielectric barrier discharge plasma device is completely wrapped in the dielectric barrier layer so as to ensure discharge safety, the control unit adaptively adjusts the discharge intensity through the sensor, and rapid cut-off protection is carried out when abnormity occurs. The dielectric barrier discharge plasma device synchronously decomposes fault gas in oil in the process of driving the oil to accelerate circulation, and integration of dual functions of transformer oil cooling and insulation purification is achieved. The device does not need moving parts, is low in power consumption, long in service life, intelligent and suitable for a high-voltage-class oil-immersed transformer.

The invention discloses a physical vapor deposition (PVD) coating method for a broken bridge aluminum profile, which is characterized in that a high-performance composite coating is formed on the surface of the profile through precise pretreatment, optimized multi-level PVD deposition and optional plasma polymerization post-treatment. Wherein the deposition process is completed in a special PVD coating system, and the system ensures that a complex-section profile with the length of 6 meters obtains a uniform film layer through the design of a planet carrier capable of revolving and rotating and a plasma enhancing device. According to the method, the problems of uniformity and binding force of long building materials treated through a traditional PVD technology are solved, the obtained coating has excellent hardness (larger than or equal to HV1500), corrosion resistance (neutral salt mist is larger than or equal to 1000 hours) and rich decoration effects, the whole process is environmentally friendly, and an innovative surface solution is provided for high-end broken bridge aluminum doors and windows.

This application relates to the field of semiconductor manufacturing and discloses a photodetector and its fabrication method, comprising: a substrate; a first cladding layer located on the upper surface of the substrate; a first waveguide located within the first cladding layer, the first waveguide and the upper surface of the first cladding layer being flush; graphene located on the upper surfaces of the first cladding layer and the first waveguide; a second waveguide located on the upper surface of the graphene; the second waveguide and the first waveguide forming a waveguide structure. The graphene is located between the first and second waveguides, and the first and second waveguides form the waveguide structure, that is, the graphene is located within the waveguide structure. The graphene is closer to the optical field center of the waveguide structure, which can enhance the interaction between the graphene and the optical field and enhance the optical absorption of the graphene. This application eliminates the need for plasma enhancement or increasing the area of ​​the graphene, thus avoiding optical losses caused by plasma structures and avoiding the limitation on the integration density of the photodetector imposed by large-area graphene.

The invention discloses a helium-assisted low-temperature thin film deposition method and device, and belongs to the technical field of thin film deposition. The method mainly comprises the steps that when reaction gas is introduced into a deposition cavity loaded with a to-be-deposited substrate, helium with the preset flow is introduced into the deposition cavity at the same time; helium and reaction gas are excited through a radio frequency electric field to generate mixed plasmas, low-temperature thin film deposition is carried out in a deposition cavity of the mixed plasmas, helium is preferentially ionized under the action of the radio frequency electric field to generate helium high-energy electrons, the helium high-energy electrons provide energy for dissociation of the reaction gas into the plasmas, and in addition, the reaction gas is separated into the mixed plasmas. Local heat generated in the helium plasma discharging process is conducted to the cavity outer wall cooling device through high thermal conductivity of helium high-energy electrons, and therefore temperature fluctuation in the cavity is reduced. The plasma enhancement and energy transfer characteristics of helium are utilized, and on the premise that the low-temperature deposition temperature is guaranteed, the deposition rate and the film performance are synchronously improved.

This invention relates to an AgNPs-Bi3NbTiO9 composite SERS substrate material, its preparation method, and its application in the detection of organic molecules, belonging to the field of surface-enhanced Raman spectroscopy and functional composite materials technology. This invention prepares a Bi3NbTiO9 support via a molten salt method and combines it with an ascorbic acid in-situ reduction strategy to uniformly load silver nanoparticles onto its surface, achieving a synergistic effect of plasma enhancement and interfacial charge transfer. The prepared material exhibits good structural stability and a high-density "hot spot" distribution, demonstrating excellent Raman enhancement performance for 4-mercaptobenzoic acid molecules. Experimental results show that this composite substrate has stronger signal enhancement and better uniformity than a single Ag substrate, achieving highly sensitive detection of target molecules at the ppm level in river water. The material preparation method described in this invention is simple, reproducible, and suitable for the rapid detection of trace organic pollutants in environmental water bodies.

The invention belongs to the technical field of thin film material preparation, and particularly relates to a method for large-area rapid deposition of a Ru-containing thin film and application. The deposition method of the Ru-containing thin film comprises the steps of substrate pretreatment, surface activation treatment, Ru-containing precursor pulse introduction and reaction gas introduction. Then, the steps of surface activation treatment, Ru-containing precursor pulse introduction and reaction gas introduction are cyclically repeated, and the metal Ru thin film is prepared; or in the cyclic and repeated deposition process, periodic oxidation enhancement treatment or plasma enhancement treatment is introduced, the oxidation state and performance of the thin film are optimized, and the ruthenium oxide thin film is prepared. According to the method, the Ru-containing thin film is efficiently and uniformly deposited on the substrate in a large area by optimizing the technological parameters and the flow, the method can be applied to a semiconductor device, and the problems that in the prior art, the Ru-containing thin film grows slowly and is poor in uniformity, and rapid large-area preparation is difficult are solved.

This invention discloses a method for preparing a low-stress superhard diamond-like carbon (DLC) coating based on composite plasma enhancement. The method employs a vacuum coating apparatus combining a magnetically controlled cathode arc source and a closed-loop unbalanced magnetron sputtering source. The plasma ionization rate is increased through a closed magnetic circuit, and large particles are dually suppressed by a dynamic scanning magnetic field and bent-tube filtration. The coating is a five-layer nano-gradient composite structure, consisting of a metal activation layer, a carbonitride gradient transition layer, a doped stress control layer, a tetrahedral amorphous carbon (ta-C) superhard framework layer, and a fluorinated diamond-like carbon (F-DLC) lubricating layer, sequentially from the substrate to the surface. The preparation process involves workpiece cleaning and furnace loading, ion cleaning and etching, gradient deposition of each functional layer, and cooling before unloading. The step-by-step deposition achieves compositional and stress gradient control, making it suitable for high-end applications such as precision molds, automotive engine parts, and 3C wear-resistant components.

The application discloses a low-power-consumption all-optical phase change memory based on a plasma enhancement effect, comprising a silicon-based planar optical waveguide, characterized in that a phase change ring structure capable of reversibly changing from a crystal state to an amorphous state under the evanescent field coupling effect of the waveguide is arranged on the waveguide, the phase change ring structure is clamped between a metal disc and a metal ring, a concentric circle structure formed by the phase change ring structure, the metal disc and the metal ring is integrally located on the upper surface of the waveguide or is semi-embedded in the waveguide or is completely embedded in the waveguide, the phase change ring structure is a phase change layer Ge2Sb2Te5 or Ge2Sb2Se4Te, has at least two stable states, namely a crystal state and an amorphous state, and the two states have obviously different absorption coefficients for probe light, and the phase change is uniform, the switching speed is faster and the power consumption is lower.