49 results about "Plasma Enhancement" patented technology

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below:In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

Examples are disclosed that relate to the use of inhibited plasma-enhanced atomic layer deposition (PEALD) comprising sputtering to fill a gap in a substrate. One example provides a method comprising performing a plurality of PEALD cycles. A PEALD cycle comprises, in an inhibition step, forming a plasma using a gas mixture comprising an inhibitor to deposit inhibitor into a gap on a substrate such that a concentration of the inhibitor deposited at a first depth is greater than a concentration of the inhibitor deposited deeper within the gap. The PEALD cycle further comprises, in a deposition step, adsorbing a silicon-containing film precursor to the substrate, and forming a plasma to convert the silicon-containing film precursor into a silicon-containing film within the gap. At least one of the inhibition step or the deposition step comprises exposing the substrate to a plasma under conditions configured to sputter the silicon-containing film.

The present invention relates to an assembly for chemical plasma deposition under low pressure conditions, more specifically plasma enhanced chemical vapor deposition, comprising a support component that integrates both a waveguide and a support component in one piece, where the waveguide is incorporated within the support component.

The invention relates to a method for preparing nano graphene and a composite material thereof at low temperature. The method is mainly realized by taking metal oxide or metal salt powder as a precursor and carbon-containing gas as a carbon source and combining means such as a plasma enhancement technology. Firstly, a precursor is placed in a vacuum furnace; then vacuumizing to a background; introducing a certain proportion of carbon source gas and auxiliary gas, and keeping the gas pressure at 10-5000 Pa; performing plasma treatment on the gas in the furnace in a certain manner; raising the temperature to 150-500 DEG C at a certain heating rate, and keeping the temperature for a period of time; and then closing the carbon source gas, stopping plasmatization, and cooling to room temperature to prepare the nano graphene and the composite material thereof. The method has the advantages that the growth temperature of the graphene is low (can be as low as 150 DEG C), and the nano graphene with the superfine particle level (1-10 nm) and the graphene / metal particle composite material perfectly coated with the graphene can be prepared.

The invention discloses a perovskite narrow-band photoelectric detector based on local plasma enhancement and a preparation method thereof, and the perovskite narrow-band photoelectric detector utilizes specially-made metal nanoparticles to accurately adjust a local surface plasma resonance band of the perovskite narrow-band photoelectric detector, thereby achieving the purpose of overlapping with a perovskite target narrow-band response range. Therefore, penetrating long-wavelength incident photons and an electromagnetic field around the metal nanoparticles generate strong coupling interaction, light absorption is effectively improved through a near-field enhancement induction excitation effect, light current is remarkably enhanced, a local surface plasmon resonance band is regulated and controlled, harmonious enhancement of a detection wave band is achieved, and the detection sensitivity is improved. And the detection performance regulation and control enhancement in the spectral response range of the photoelectric detector is further realized.

The invention relates to the technical field of detection, and discloses an MCP image enhancement high-sensitivity detection system, which comprises a photoelectric cathode, which adopts a multi-quantum well structure and a surface plasma enhancement technology, is used for converting incident photons into primary electrons, and comprises a quantum well formed by gallium arsenide and gallium aluminum arsenide; a microchannel plate for amplifying primary electrons generated from the photocathode; the microchannel plate is coated with a superconducting thin film so as to reduce noise and improve electronic gain; various types of sensors include optical sensors, thermal imaging sensors, acoustic sensors, and chemical sensors. By adopting a multi-quantum well structure and a surface plasma enhanced photoelectric cathode, the spectral response and photoelectric conversion efficiency are remarkably improved, and the sensitivity and response speed of the system to non-specific wavelengths are enhanced. Meanwhile, the microchannel plate coated with the superconducting thin film effectively reduces the noise level, improves the signal definition and the image quality, and solves the high-gain limitation of a traditional system.

The application discloses a kind of secondary batteries based on light-assisted plasma enhanced photoelectric performance.It uses plasma complex lithium-containing semiconductor material or lithium-free semiconductor material with plasma effect as positive electrode.The plasma complex lithium-containing semiconductor material is obtained by doping lithium-containing semiconductor material with nano material with plasma effect, and the nano material with plasma effect and semiconductor material have completely overlapping or partially overlapping light response range.Positive electrode captures incident light and generates plasma on the surface of positive electrode to increase the total number of external use electrons and improve the specific capacity of the battery.The secondary battery of the application can effectively reduce the battery interface resistance and increase the electronic conductivity of electrode material under the effect of plasma enhancement, thereby improving the battery capacity.

A method for forming an oxide layer includes forming a protective interlayer oxide on sidewalls of a trench formed on a substrate, forming a silicon nitride layer on the protective interlayer oxide, by a plasma-enhanced atomic layer deposition (PE ALD) process utilizing nitrogen-containing process gas, the silicon nitride layer having a concentration gradient of nitrogen varying from high concentration away from the protective interlayer oxide to low concentration near the protective interlayer oxide, and performing a conversion process to oxidize the formed silicon nitride layer to at least partially convert the formed silicon nitride layer to a silicon oxide layer.

The invention relates to a transformer oil circulation plasma enhancement method and system, a dielectric barrier discharge plasma device is arranged in an oil duct of a transformer oil tank, the ionic wind effect generated by the dielectric barrier discharge plasma device is used for driving oil to accelerate flow circulation, and therefore traditional mechanical oil pump driving is replaced. The high-voltage electrode of the dielectric barrier discharge plasma device is completely wrapped in the dielectric barrier layer so as to ensure discharge safety, the control unit adaptively adjusts the discharge intensity through the sensor, and rapid cut-off protection is carried out when abnormity occurs. The dielectric barrier discharge plasma device synchronously decomposes fault gas in oil in the process of driving the oil to accelerate circulation, and integration of dual functions of transformer oil cooling and insulation purification is achieved. The device does not need moving parts, is low in power consumption, long in service life, intelligent and suitable for a high-voltage-class oil-immersed transformer.

The laser-induced plasma enhanced welding process comprises the following steps that firstly, active gas and protective gas are synchronously conveyed through a coaxial gas path composite gas supply system, secondly, a pulse laser beam is adopted to act on the surface of a workpiece, and controlled plasma is induced to be generated, and thirdly, laser-induced plasma enhanced welding is conducted. A plasma emission spectrum is collected in real time through a spectrum diagnosis unit, and the characteristic spectral line intensity and broadening characteristics are detected; and 4, the laser power, the pulse frequency and the gas component proportion are dynamically adjusted based on the spectral analysis result. By adopting a coaxial gas path composite gas supply system and arranging an inner-layer active gas channel and an outer-layer protective gas channel, an axial velocity gradient composite gas curtain is formed, plasma expansion is dynamically restrained, and the form of plasma is accurately controlled, so that the problem that the form of the plasma is difficult to accurately control is solved; the energy loss caused by the plasma shielding effect is reduced, and the utilization rate of laser energy is improved.

Examples are disclosed that relate to depositing a carbon mask to thicken a partially etched mask. One example provides a method comprising forming a mask layer on a substrate, and etching the substrate to partially form one or more etched features, the etching of the substrate also causing etching of the mask layer. The method further comprises, after etching a portion of the one or more etched features but before completing etching of the one or more etched features, depositing, by plasma-enhanced chemical vapor deposition (PECVD), a carbon mask over the mask layer.

Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

The invention discloses deposition film forming equipment, plasma enhancement process equipment and a supporting assembly.The supporting assembly is applied to the deposition film forming equipment or the plasma enhancement process equipment and comprises a supporting pipe, an electrode stem and an electrode connecting part, and at least part of the electrode stem is assembled in the supporting pipe in an inserted mode; an inserting hole is formed in the tube wall of the supporting tube, the electrode connecting part is assembled in the inserting hole in an inserting mode, and the electrode connecting part is connected with the electrode rod. The supporting assembly is integrated with the electrode stem and the electrode connecting part, the structure is compact, the integration degree is high, the mounting occupied space can be reduced, the mounting structure can be simplified, mounting or dismounting can be conveniently carried out, and the surface of the electrode stem can be prevented from being coated with a film.

Disclosed are embodiments of a thin-film photovoltaic technology including a single-junction crystalline silicon solar cell with a photonic-plasmonic back-reflector structure for lightweight, flexible energy conversion applications. The back-reflector enables high absorption for long-wavelength and near-infrared photons via diffraction and light-concentration, implemented by periodic texturing of the bottom-contact layer by nanoimprint lithography. The thin-film crystalline silicon solar cell is implemented in a heterojunction design with amorphous silicon, where plasma enhanced chemical vapor deposition (PECVD) is used for all device layers, including a low-temperature crystalline silicon deposition step. Excimer laser crystallization is used to integrate crystalline and amorphous silicon within a monolithic process, where a thin layer of amorphous silicon is converted to a crystalline silicon seed layer prior to deposition of a crystalline silicon absorber layer via PECVD. The crystalline nature of the absorber layer and the back-reflector enable efficiencies higher than what is achievable in other thin-film silicon devices.

The present invention proposes a method for calculating the interior ballistic characteristic parameters of a mixed charge under plasma ignition. The method includes determining the discharge parameters of a pulse power supply; establishing a formula for the gunpowder burning rate under plasma enhancement; determining the shape functions of two gunpowders; establishing a projectile motion equation and an electrothermal chemical launch interior ballistic equation; substituting the input electrical energy into the electrothermal chemical launch interior ballistic equation, combining the gunpowder burning rate formula and the shape function to perform a time-advancing solution, and finally using the projectile motion equation and the electrothermal chemical launch interior ballistic equation to obtain the internal pressure and projectile velocity curve during the projectile's discharge process. The present invention solves the problem of existing electrothermal chemical launch interior ballistic models that only consider a single charge structure, and can quickly and effectively calculate the internal pressure and projectile velocity curve during the discharge process of an electrothermal chemical launch projectile with a mixed charge structure.

The present invention discloses a composite solder and a preparation method thereof, a packaging method, and a composite solder preparation method comprising the following steps: providing a basic solder, wherein the basic solder composition comprises 20% to 35% of metallic copper, 55% to 70% of metallic silver, and 10% to 15% of an auxiliary agent, wherein the mass ratio of metallic silver to metallic copper is (20 to 35): (50 to 70); placing metallic silver and metallic copper in an atmosphere containing a carbon source gas for plasma chemical vapor deposition treatment, preparing a prefabricated solder, and mixing the prefabricated solder and the auxiliary agent. Plasma enhanced chemical vapor deposition is used to in-situ grow nanographene on a basic solder containing metallic silver and metallic copper, the grown graphene is dispersedly distributed, and fine crystal strengthening can solve the problem that graphene is easy to agglomerate and hinder the flow of solder to cause hole formation, and the prepared composite solder can effectively improve the welding strength and realize the gradient transition of thermal expansion coefficient between ceramic-solder-metal.

The present invention relates to a method for radiation enhancement based on non-uniform plasma. This method aims to overcome the relatively simple physical models of existing plasma enhancement technologies and the lack of general discussion on how to achieve optimal enhancement using non-uniform plasma. The method is based on a plasma-enhanced small electric antenna, which includes a spherical plasma shroud and a small electric antenna located within the shroud. Furthermore, the plasma within the shroud is non-uniformly distributed along the radius of the shroud. The radiation enhancement method is as follows: the plasma density and the size of the plasma shroud are adjusted to meet the following conditions, thereby enhancing the radiation of the small electric antenna with the non-uniform plasma.

Showerhead assemblies for semiconductor manufacturing processing chambers and semiconductor manufacturing processing chambers using the showerhead assemblies are described. The showerhead assemblies comprise a backing plate with an embedded heater and a faceplate. The embedded heater has a radius sufficient to located the heater over a sidewall of the processing chamber and reduces temperature non-uniformity of a wafer during processing.

The invention provides a simulation method and system considering energy conversion of a plasma ignition system, and belongs to the technical field of plasma-assisted combustion numerical simulation. The method comprises the following steps: acquiring combustion parameters and kinetic parameters in a plasma ignition simulation process; classifying plasma dynamics and combustion dynamics according to reaction types, and performing global sensitivity analysis based on combustion parameters and kinetic parameters; determining key substances by adopting a plasma thermochemical unstable model and energy decomposition according to the result of the global sensitivity analysis; and processing the key substance by using an element-based plasma global flux model, determining a specific global path and dynamic effects of a chemical reaction in different time periods, further determining a fuel decomposition path, and quantifying the dynamic enhancement process of plasma ignition. The problem of explaining the plasma enhanced ignition rule is effectively solved, and further application of the PAC technology is promoted.

A method of plasma processing that includes: flowing a first gas and a second gas into a plasma processing chamber including a substrate, the second gas including a film precursor; at a first time instance, while maintaining the flow of the first gas, shutting off the flow of the second gas into the plasma processing chamber; and at a second time instance after the first time instance, powering an electrode of the plasma processing chamber to generate a plasma within the plasma processing chamber, the surface of the substrate being exposed to the generated plasma to form a film over the substrate.

The invention discloses a physical vapor deposition (PVD) coating method for a broken bridge aluminum profile, which is characterized in that a high-performance composite coating is formed on the surface of the profile through precise pretreatment, optimized multi-level PVD deposition and optional plasma polymerization post-treatment. Wherein the deposition process is completed in a special PVD coating system, and the system ensures that a complex-section profile with the length of 6 meters obtains a uniform film layer through the design of a planet carrier capable of revolving and rotating and a plasma enhancing device. According to the method, the problems of uniformity and binding force of long building materials treated through a traditional PVD technology are solved, the obtained coating has excellent hardness (larger than or equal to HV1500), corrosion resistance (neutral salt mist is larger than or equal to 1000 hours) and rich decoration effects, the whole process is environmentally friendly, and an innovative surface solution is provided for high-end broken bridge aluminum doors and windows.

Showerhead assemblies for semiconductor manufacturing processing chambers and semiconductor manufacturing processing chambers using the showerhead assemblies are described. The showerhead assemblies comprise a backing plate with an embedded heater and a faceplate. The embedded heater has a radius sufficient to located the heater over a sidewall of the processing chamber and reduces temperature non-uniformity of a wafer during processing.

Plasma enhanced chemical vapour deposition (PECVD) is used to deposit silicon nitride onto a semiconductor substrate. A stack of silicon nitride layers are deposited onto a rear surface of the semiconductor substrate by PECVD. The stack of silicon nitride layers comprises at least four layers of silicon nitride which alternate between tensile layers which are subject to a tensile stress and compressive layers which are subject to a compressive stress.

The application discloses a kind of double-layer silicon dioxide structure's plasma enhanced fluorescence miRNA nanoprobe and its preparation method and application.The application uses the distance between the separation fluorescent group and nanometer gold particle by surface modification amino-modified silica coating layer, so as to achieve plasma enhancement effect;Then using the extinction peak generated when metal nanoparticle local surface plasmon resonance and the mutual overlap of fluorescence group (FITC or RITC) excitation peak or absorption peak, so as to further optimize plasma enhancement effect, and then prepare the plasma enhanced fluorescence miRNA nanoprobe with good stability, specificity and sensitivity, which can be used for quantitative detection miRNA-21 and miRNA-150 in T cell, for monitoring its differentiation state, for monitoring T cell phenotype and providing promising tool for promoting immunotherapy.

The invention relates to a plasma enhanced photoelectric detector based on a GaN / TiO2 nano array and a preparation method thereof, and the method comprises the steps: firstly preparing a TiO2 nano column array on an N-type Si substrate, and enabling the TiO2 nano column array to be inversely soaked in metal Ga, so as to enable the TiO2 nano column array to be covered by a Ga2O3 film; and after the quality of the Ga2O3 film is improved through oxygen annealing, the Ga2O3 film is placed in the NH3 atmosphere to be annealed, and the GaN film is obtained. And then adding silver nanoparticles, covering graphene on the particles, and finally preparing a cathode and an anode to prepare the device. According to the structure, high specific surface area and carrier transmission efficiency of the GaN / TiO2 nano array are utilized, and a plasma enhancement effect is combined, so that efficient detection of ultraviolet light and visible light is realized. The graphene covering layer enhances the plasma effect of the silver nanoparticles and provides good conductivity, and the electrodes ensure effective electron injection and hole collection to form current. The photoelectric detector has the advantages of high sensitivity, low dark current, high response speed and the like, and is suitable for ultraviolet and visible light detection application.

Techniques are disclosed for protecting a lithographic mask and its lithographic pattern during the lifecycle of the mask. This is accomplished by deposited an extremely uniform and geometrically conformal protective coating on the mask that provides it mechanical and electrostatic protection. The coating is doped by introducing a controlled amount of hydrogen in it. The coating envelopes or surrounds the pattern on the mask thereby providing it protection during the various operations in the lifecycle of the mask, including cleanings, repairs, inspections, etc. The conformal coating is deposited in a hybrid reactor by a plasma-enhanced ALD (PEALD) or preferably still a continuous-flow PEALD, and is then carefully doped with a controlled amount of hydrogen.

1. The name of the product of this design: plasma enhanced atomic layer deposition device. 2. Purpose of the product of this design: to perform thin film deposition reaction on wafers by plasma enhancement. 3. The design key point of this appearance design product lies in the overall shape of the product. 4. The picture or photo that best illustrates the design points: three-dimensional picture.

A method for forming an oxide layer includes forming a protective interlayer oxide on sidewalls of a trench formed on a substrate, forming a silicon nitride layer on the protective interlayer oxide, by a plasma-enhanced atomic layer deposition (PE ALD) process utilizing nitrogen-containing process gas, the silicon nitride layer having a concentration gradient of nitrogen varying from high concentration away from the protective interlayer oxide to low concentration near the protective interlayer oxide, and performing a conversion process to oxidize the formed silicon nitride layer to at least partially convert the formed silicon nitride layer to a silicon oxide layer.

This application relates to the field of semiconductor manufacturing and discloses a photodetector and its fabrication method, comprising: a substrate; a first cladding layer located on the upper surface of the substrate; a first waveguide located within the first cladding layer, the first waveguide and the upper surface of the first cladding layer being flush; graphene located on the upper surfaces of the first cladding layer and the first waveguide; a second waveguide located on the upper surface of the graphene; the second waveguide and the first waveguide forming a waveguide structure. The graphene is located between the first and second waveguides, and the first and second waveguides form the waveguide structure, that is, the graphene is located within the waveguide structure. The graphene is closer to the optical field center of the waveguide structure, which can enhance the interaction between the graphene and the optical field and enhance the optical absorption of the graphene. This application eliminates the need for plasma enhancement or increasing the area of ​​the graphene, thus avoiding optical losses caused by plasma structures and avoiding the limitation on the integration density of the photodetector imposed by large-area graphene.