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Copper indium gallium selenide thin-film solar cell uniform in gallium distribution and preparation method thereof

A solar cell and element uniform technology, which is applied to circuits, photovoltaic power generation, electrical components, etc., can solve the problems of poor gallium on the surface of copper indium gallium selenide films, uneven distribution of gallium elements, and two-phase separation of films, and achieves favorable diffusion. Penetration, uniform distribution, increased surface area effect

Active Publication Date: 2016-12-14
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention aims at the uneven distribution of gallium element in the copper indium gallium selenide thin film prepared by the step-by-step electrodeposition followed by selenization method, which leads to poor gallium on the surface of the copper indium gallium selenide thin film and rich gallium on the bottom, and even causes copper indium gallium selenide (CIS) to appear in the thin film. ) and copper-gallium-selenide (CGS) two-phase separation problem, providing a preparation method of copper-indium-gallium-selenide thin-film solar cells with uniform distribution of gallium elements

Method used

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  • Copper indium gallium selenide thin-film solar cell uniform in gallium distribution and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0031] (1) Clean the surface of soda-lime glass with a semiconductor cleaning agent, then soak it in deionized water and ultrasonically clean it for 30 minutes, twice before and after, take it out, rinse it with deionized water, and finally dry it with nitrogen;

[0032] (2) Place the cleaned soda-lime glass in 2×10 -4 In the Pa vacuum chamber, the molybdenum back electrode is sputtered by sputtering method, with a thickness of 730nm;

[0033] (3) On the soda-lime glass sputtered with molybdenum back electrode, the copper layer is electrodeposited by the pulsed direct current method, the pulse frequency is 3000Hz, the duty cycle is 5%, and the current density is 55mA / cm 2 , the time is 13s, the solution system used contains CuSO 4 and H 2 SO 4 The mixed solution (CuSO in the mixed solution 4 The concentration is 0.75mol / L, H 2 SO 4 The concentration is 0.765mol / L);

[0034] (4) On the copper layer obtained in step (3), use pulsed direct current method to electrodeposit ...

Embodiment 2

[0042] (1) Clean the surface of soda-lime glass with a semiconductor cleaning agent, then soak it in deionized water and ultrasonically clean it for 30 minutes, twice before and after, take it out, rinse it with deionized water, and finally dry it with nitrogen;

[0043] (2) Place the cleaned soda-lime glass in 2×10 -4 In the Pa vacuum chamber, the molybdenum back electrode is sputtered by sputtering method, with a thickness of 730nm;

[0044] (3) On the soda-lime glass sputtered with molybdenum back electrode, the copper layer is electrodeposited by the pulsed direct current method, the pulse frequency is 3000Hz, the duty cycle is 5%, and the current density is 55mA / cm 2 , the time is 13s, the solution system used contains CuSO 4 and H 2 SO 4 The mixed solution (CuSO in the mixed solution 4 The concentration is 0.75mol / L, H 2 SO 4 The concentration is 0.765mol / L);

[0045] (4) On the copper layer obtained in step (3), use pulsed direct current method to electrodeposit ...

Embodiment 3

[0053] (1) Clean the surface of soda-lime glass with a semiconductor cleaning agent, then soak it in deionized water and ultrasonically clean it for 30 minutes, twice before and after, take it out, rinse it with deionized water, and finally dry it with nitrogen;

[0054] (2) Place the cleaned soda-lime glass in 2×10 -4 In the Pa vacuum chamber, the molybdenum back electrode is sputtered by sputtering method, with a thickness of 730nm;

[0055] (3) On the soda-lime glass sputtered with molybdenum back electrode, the copper layer was electrodeposited by the pulsed direct current method, the pulse frequency was 4000Hz, the duty cycle was 10%, and the current density was 57.5mA / cm 2 , the time is 12s, the solution system used contains CuSO 4 and H 2 SO 4 The mixed solution (CuSO in the mixed solution 4 The concentration is 0.75mol / L, H 2 SO 4 The concentration is 0.765mol / L);

[0056] (4) On the copper layer obtained in step (3), use the pulsed direct current method to elec...

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Abstract

The invention discloses a copper indium gallium selenide thin-film solar cell uniform in gallium distribution and a preparation method thereof. The plasma enhancement selenylation etching composite technology is introduced in the selenylation reaction process, the activity of selenium steam is improved by means of plasma, meanwhile an alloy prefabricated layer is etched by means of the plasma, redundant selenium in the alloy prefabricated layer is removed, the surface area of the alloy prefabricated layer is increased so as to achieve better diffusion and permeation of activated selenium steam, reaction of the activated selenium steam, copper, indium and gallium is made more sufficient, and uniform distribution of gallium in a thin film is achieved. All elements in components, especially gallium, of the prepared copper indium gallium selenide thin film are uniform in distribution, and conversion efficiency of the prepared copper indium gallium selenide thin-film solar cell is greatly improved.

Description

technical field [0001] The invention relates to the technical field of copper indium gallium selenide thin film solar cells, in particular to a copper indium gallium selenide thin film solar cell with uniform gallium element distribution and a preparation method thereof. Background technique [0002] In all thin-film solar cells, copper indium gallium selenide (Cu(In,Ga)Se 2 , CIGS) thin-film solar cells are considered to be the most promising solar cells. Its visible light absorption coefficient is high (10 5 cm -1 ), adjustable bandgap (1.04~1.67eV), high photoelectric conversion efficiency, good stability and strong radiation resistance. Currently, the highest conversion efficiency has reached 22.6%. [0003] The copper indium gallium selenide thin film is prepared by effectively doping an appropriate amount of metal gallium in the copper indium gallium selenide thin film to replace part of the metal indium, thereby preparing the copper indium gallium selenide thin f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/032
CPCH01L31/0322Y02E10/541Y02P70/50
Inventor 张晓清汤勇黄云翔陆龙生袁伟万珍平李宗涛
Owner SOUTH CHINA UNIV OF TECH
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