Method for preparing hydrogen-containing diamond-like carbon film

A technology of diamond-like carbon film and hydrogen gas is applied in the field of preparation of hydrogen-containing diamond-like carbon film, which can solve the problems of difficulty in practical application and low growth rate, and achieve the effect of an effective preparation method and increasing growth rate.

Inactive Publication Date: 2011-04-06
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The low growth rate will bring great di

Method used

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  • Method for preparing hydrogen-containing diamond-like carbon film
  • Method for preparing hydrogen-containing diamond-like carbon film
  • Method for preparing hydrogen-containing diamond-like carbon film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] 1) Substrate pretreatment: standard cleaning is carried out on the quartz wafers used for the preparation of hydrogen-containing diamond-like films. Ultrasonic cleaning for 10 minutes with a numerically controlled ultrasonic cleaner, followed by rinsing the quartz slices with hot and cold deionized water for 10 minutes, and drying the quartz slices with a nitrogen gun. Then, the dried quartz slices were soaked in chromic acid solution for more than 12h. After taking out the quartz plate from the chromic acid, rinse it with hot and cold deionized water for 15 minutes respectively, and dry it with a nitrogen gun. Finally, the cleaned quartz wafer substrate was baked in a vacuum oven at 120° C. for 30 minutes, and then used.

[0038] 2) Substrate antiparallel placement: In the plasma-enhanced chemical vapor deposition growth chamber, put a quartz sample holder with a height of 1.0 cm, and then place the cleaned quartz wafer substrate on the glass sample stage in reverse ...

Embodiment 2

[0047] 1) Substrate pretreatment: the treatment process is the same as in Example 1;

[0048] 2) The substrate is placed in reverse: in the plasma-enhanced chemical vapor deposition growth chamber, a quartz sample holder with a height of 1.5 cm is placed, and then the cleaned quartz wafer substrate is placed on the glass sample stage in reverse, And an insulating masking sheet is covered on the back of the substrate, so that the front of the substrate used for growing the hydrogen-containing diamond-like film faces the source electrode.

[0049] 3) Use plasma sputtering to clean the growth chamber and the surface of the substrate: the oxygen flow rate of 60 sccm is passed into the plasma-enhanced chemical vapor deposition growth chamber, and plasma gas is formed after glow discharge, which is beneficial to the plasma-enhanced chemical vapor deposition. The chemical vapor deposition growth chamber and the surface of the substrate are cleaned by sputtering. During the cleaning ...

Embodiment 3

[0054] 1) Substrate pretreatment: Bottom pretreatment: The treatment process is the same as that in Embodiment 1.

[0055] 2) The substrate is placed in reverse: in the plasma-enhanced chemical vapor deposition growth chamber, a quartz sample holder with a height of 2.5 cm is placed, and then the cleaned quartz wafer substrate is placed on the glass sample stage in reverse, And an insulating masking sheet is covered on the back of the substrate, so that the front of the substrate used for growing the hydrogen-containing diamond-like film faces the source electrode.

[0056] 3) Use plasma sputtering to clean the growth chamber and the surface of the substrate: the flow rate of 80sccm oxygen is passed into the plasma-enhanced chemical vapor deposition growth chamber, and plasma gas is formed after glow discharge, which is beneficial to the plasma-enhanced chemical vapor deposition. The chemical vapor deposition growth chamber and the surface of the substrate are cleaned by sputt...

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Abstract

The invention relates to a method for preparing a hydrogen-containing diamond-like carbon film, relating to diamond-like carbon films. The preparation method of the hydrogen-containing diamond-like carbon film comprises the following steps of: placing a substrate with a front surface over against a source electrode into a plasma enhancement type chemical vapor deposition growth cavity, and cleaning the plasma enhancement type chemical vapor deposition growth cavity and the surface of the substrate in a sputtering way by using plasmas; vacuumizing the plasma enhancement type chemical vapor deposition growth cavity, accessing a hydrogen-containing gas, regulating working pressure and radio frequency power, and growing the hydrogen-containing diamond-like carbon film; after the growth is closed, stopping introducing the hydrogen-containing gas, and completely extracting a tail gas so as to obtain the hydrogen-containing diamond-like carbon film. The plasma enhancement type chemical vapor deposition method which reversely places the substrate into the growth cavity parallel to the source electrode and then regulates the distance between the substrate and the source electrode and changes the working pressure and the radio frequency power can modulate an optical band gap of the diamond-like carbon film in a wider range, obviously enhance the growth rate of the diamond-like carbon film and meet the requirements for future application of the diamond-like carbon film.

Description

technical field [0001] The invention relates to a diamond-like film, in particular to a method for preparing a hydrogen-containing diamond-like film. Background technique [0002] Diamond-like carbon film (Diamond-Like Carbon, referred to as DLC) is an amorphous carbon material, carbon atoms in sp 2 and sp 3 hybrid bonding. sp 3 The presence of hybrid bonds makes diamond-like carbon films have excellent properties similar to diamond, such as high hardness, wear resistance, low friction coefficient, high electrical resistivity, high thermal conductivity and high chemical stability. Since its discovery in the 1970s, due to its unique properties in mechanics, chemistry, optics, heat, electricity, etc., diamond-like films have attracted a lot of research work and achieved many practical application results (1, Deng Xinlu , Ma Guojia, Application and Preparation of Diamond-like Films, "Vacuum", 2002, 05: 27-31). As a new type of optoelectronic material, the application of di...

Claims

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Application Information

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IPC IPC(8): C23C16/27C23C16/505
Inventor 王辅明张玲崔万国黎琼钰
Owner XIAMEN UNIV
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