A kind of preparation method and application of pmo film

A film and coating technology, applied in the field of the preparation of ordered mesoporous organic silicon films, can solve the problems of signal transmission delay, noise interference enhancement, power loss, etc., to improve mechanical strength, solve signal transmission delay, guarantee The effect of the degree of cross-linking

Active Publication Date: 2018-11-06
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The second technical problem to be solved by the present invention is to provide a kind of application of PMO thin film in VLSI, the specific PMO thin film used has ultra-low dielectric constant, thereby can solve the signal problem caused by high dielectric constant. Problems such as transmission delay, noise interference enhancement, power loss, etc.

Method used

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  • A kind of preparation method and application of pmo film
  • A kind of preparation method and application of pmo film
  • A kind of preparation method and application of pmo film

Examples

Experimental program
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Embodiment 1

[0049] When preparing the PMO thin film in this embodiment, the required raw materials are: 1,3-adamantanedicarboxylic acid (ADCA), Thichner's reagent, purity 95%, specification 25g; 3-aminopropyltriethoxysilane ( KH-550), Aladdin reagent, purity 97%, specifications 100g; chloroform, Sinopharm reagent, molecular sieve drying; ethanol, Sinopharm reagent, molecular sieve drying; hydrochloric acid, Sinopharm reagent; thionyl chloride, Sinopharm reagent; triethylamine , Sigma reagent, purity 99%, specification 100mL; Poloxamer (P-123), Sigma reagent, average molecular weight 5800, specification 250mL.

[0050] The preparation method of the PMO thin film of the present embodiment, comprises the steps:

[0051] (1) prepare the acid chloride compound shown in formula I;

[0052]

[0053] The specific preparation process is as follows: in 1,3-adamantanedicarboxylic acid (ADCA), add excess thionyl chloride solution (adding excess thionyl chloride means that the molar ratio of thion...

Embodiment 2

[0072] The difference between the preparation method of the PMO film of this example and Example 1 is that in step (3), the quality of the template agent is 25% of the molecular weight of the precursor; meanwhile, by adjusting the amount of ethanol and dilute hydrochloric acid, the coating film In the solution, the concentration of the precursor molecules is the same as in Example 1.

[0073] Other steps of the preparation method of the PMO thin film in this embodiment are the same as in Embodiment 1.

Embodiment 3

[0075] The difference between the preparation method of the PMO film of this example and Example 1 is that in step (3), the quality of the template agent is 50% of the molecular weight of the precursor; meanwhile, by adjusting the amount of ethanol and dilute hydrochloric acid, the coating film In the solution, the concentration of the precursor molecules is the same as in Example 1.

[0076] Other steps of the preparation method of the PMO thin film in this embodiment are the same as in Embodiment 1.

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Abstract

The invention relates to a preparation method and application of a periodic organosilica mesoporous (PMO) thin film. The preparation method comprises the following steps : (1), providing acid chlorides, which is represented by the formula I defined in the description; (2), preparing a precursor molecular solution : mixing the acid chlorides, 3-triethoxysilylpropylamine with triethylamine for reaction to obtain the precursor molecular solution, wherein the molar ratio of acid chlorides to 3-triethoxysilylpropylamine to triethylamine is (0.5-1):(1-2):(1.2-2.4); the structural formula of precursor molecules is which is represented by the formula II defined in the description; (3), preparing a coating solution : adding a template agent, a solvent and diluted hydrochloric acid into the precursor molecular solution to obtain the coating solution, and the additive amount of the template agent is 0-100%; (4), preparing the PMO thin film: coating the surface of a substrate with the coating solution, and curing to obtain the PMO thin film. According to the preparation method and application of the periodic organosilica mesoporous (PMO) thin film, provided by the invention, the dielectric constant of the novel PMO thin film is decreased while the mechanical property of the novel PMO thin film is ensured by enlarging the molecular pore volume, reducing the molecular polarity and improving the degree of crosslinking.

Description

technical field [0001] The invention relates to a method for preparing an ordered mesoporous organic silicon film, and also relates to the application of the ordered mesoporous organic silicon film prepared by the preparation method. Background technique [0002] In order to reduce the dielectric constant of the material, it has become a widely used experimental method to make porous dielectric materials by introducing air with a very low dielectric constant into the pores of the material. However, the introduction of pores also reduces the stability and thermal conductivity of the material. Therefore, it is necessary to establish a suitable model theoretically to guide experiments and predict the impact of porosity on thermal and electrical properties. [0003] The preparation of porous low dielectric materials usually includes sol-gel method, in-situ grafting method and template method. Among them, the template method is widely used by scientists in the research field of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08J5/18C08J9/26C08L83/08C08G77/26H01L23/532
Inventor 张国平孙蓉张贾伟
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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