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Process for treating a magnetic structure

A magnetic structure and process technology, applied in the fields of magnetic field controlled resistors, metal material coating process, electromagnetic device manufacturing/processing, etc., can solve the problems of reducing material characteristics, large amounts of energy, consumption, etc., to reduce thermal budget, Lowering and reducing the effect of temperature and synthesis time

Active Publication Date: 2015-12-16
CENT NAT DE LA RECHERCHE SCI +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, this high temperature degrades the properties of the material, which usually has more structural defects after thermal annealing, which are responsible for the poorer uniformity of the magnetic properties
[0008] Additionally, such high temperatures imply substantial energy consumption, which is undesirable in processes performed on an industrial scale

Method used

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  • Process for treating a magnetic structure
  • Process for treating a magnetic structure
  • Process for treating a magnetic structure

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Embodiment Construction

[0042] figure 1 Various steps of a process for processing a magnetic structure according to the invention are explained.

[0043] The first step S10 of the process includes providing a magnetic structure 100 .

[0044] refer to figure 2 , the magnetic structure 100 includes a first layer 102 made of a magnetic material including a cobalt iron boron (CoFeB) alloy.

[0045] The magnetic structure 100 further includes a substrate 104 on which the magnetic layer 102 is disposed.

[0046] The magnetic structure 100 may also include a "buffer" layer 101, such as a tantalum (Ta) film deposited between the substrate 104 and the magnetic layer 102, promoting a specific crystal structure and interfacial anisotropy of the magnetic layer.

[0047] exist image 3 In the first variant shown, the magnetic structure 100 is a multilayer structure comprising, in addition to a magnetic layer 102 deposited on a buffer layer 101, a second layer 106 made of an insulating material and deposited...

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Abstract

Process for treating a magnetic structure, characterised in that it comprises the following steps: providing (S10) a magnetic structure comprising at least one first layer of magnetic material comprising a CoFeB alloy; irradiating (S20) the magnetic structure with light low-energy ions; and simultaneously holding (S30) the magnetic structure with a preset temperature profile and for a preset time.

Description

technical field [0001] The invention relates to a process for processing magnetic structures, in particular for digital storage, such as MRAM (Magnetic Random Access Memory). Background technique [0002] Considering that the total amount of digital data generated globally has significantly increased (2.7Z bytes in 2012), the storage density (storage capacity per unit area) of non-volatile mass memory must also continue to increase. Such an increase must help control the proliferation of storage media while meeting the compactness requirements of mobile applications and reducing the energy footprint. [0003] The market for non-volatile mass memory is currently divided into hard disks (used in computers and data centers) and flash memory used in mobile applications (smartphones, ultraportables, etc.). Although the performance of these two technologies has improved significantly in recent years, as of 2015, both technologies will still face important technical barriers in te...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12C23C18/50H01F41/14H10N50/01H10N50/10H10N50/80
CPCH01F41/308H10N50/01H10N50/10H01F1/047H01F7/02H01F41/0253
Inventor 达菲内·拉维洛索纳
Owner CENT NAT DE LA RECHERCHE SCI