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Magnetic multilayer film with antiferromagnetc interlayer coupling, and production method thereof

An antiferromagnetic layer and multi-layer film technology is applied to the magnetic multi-layer film with anti-ferromagnetic interlayer coupling and the field of preparation thereof, which can solve the problems such as the failure of the magnetic multi-layer film to make a breakthrough, and achieve a simplified structure, Good effect of epitaxial growth

Active Publication Date: 2015-12-23
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, how to obtain a magnetic multilayer film based on transition metal oxides that can achieve antiferromagnetic interlayer coupling between ferromagnetic layers has not been a breakthrough.

Method used

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  • Magnetic multilayer film with antiferromagnetc interlayer coupling, and production method thereof
  • Magnetic multilayer film with antiferromagnetc interlayer coupling, and production method thereof
  • Magnetic multilayer film with antiferromagnetc interlayer coupling, and production method thereof

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preparation example Construction

[0046] The present invention also provides a method for preparing a magnetic multilayer film with antiferromagnetic interlayer coupling, comprising:

[0047] sequentially depositing a barrier layer and a magnetic layer on the substrate, and repeatedly depositing the barrier layer and the magnetic layer to obtain a deposited magnetic multilayer film;

[0048] Wherein, the barrier material of the barrier layer is CaRu 0.5 Ti 0.5 o 3 ;

[0049] The number of layers of the barrier layer is N, N≥3;

[0050] The ferromagnetic material of the ferromagnetic layer is a perovskite transition metal oxide,

[0051] The number of layers of the magnetic layer is N-1;

[0052] The deposited magnetic multilayer film is annealed to obtain a magnetic multilayer film with antiferromagnetic interlayer coupling.

[0053] According to the present invention, a barrier layer and a magnetic layer are sequentially deposited on the substrate, and the barrier layer and the magnetic layer are deposi...

Embodiment 1

[0064] Preparation of [CaRu 0.5 Ti 0.5 o 3 (1.2nm) / La 0.67 Ca 0.33 MnO 3 (2.8nm)] 10 / CaRu 0.5 Ti 0.5 o 3 (1.2nm), that is, the magnetic multilayer film with N=11 antiferromagnetic interlayer coupling

[0065] 1) Preparation of La 0.67 Ca 0.33 MnO 3 Ferromagnetic material: CaO (99.99% pure), MnO 2 (purity ≥ 98.0%) and La 2 o 3 (purity 99.99%) powder according to La 0.67 Ca 0.33 MnO 3 The chemical molar ratio of Ca element, Mn element and La element is mixed, after grinding evenly, it is pre-fired three times at 1100°C, 1200°C, 1300°C respectively, and the time of each pre-burning is 12 hours, and then it is pressed under 40MPa pressure. Circular target, and calcined at 1350°C for 24 hours, sintered into La 0.67 Ca 0.33 MnO 3 target, ie La 0.67 Ca 0.33 MnO 3 ferromagnetic material.

[0066] 2) Preparation of CaRu 0.5 Ti 0.5 o 3 Barrier material: CaO (99.99% pure), RuO 2 (99.95% pure), TiO 2 (purity 99.99%) powder according to CaRu 0.5 Ti 0.5 o 3 ...

Embodiment 2

[0074] Preparation of [CaRu 0.5 Ti 0.5 o 3 (1.2nm) / La 0.67 Ca 0.33 MnO 3 (2.8nm)] 2 / CaRu 0.5 Ti 0.5 o 3 (1.2nm), that is, the magnetic multilayer film with N=3 antiferromagnetic interlayer coupling

[0075] 1) Preparation of La 0.67 Ca 0.33 MnO 3 Ferromagnetic material: CaO (99.99% pure), MnO 2 (purity ≥ 98.0%) and La 2 o 3 (purity 99.99%) powder according to La 0.67 Ca 0.33 MnO 3 The chemical molar ratio of Ca element, Mn element and La element is mixed in the mixture. After uniform grinding, it is pre-fired three times at 1100°C, 1200°C, and 1300°C. Shaped target, and calcined at 1350 °C for 24 hours, sintered into La 0.67 Ca 0.33 MnO 3 target, ie La 0.67 Ca 0.33 MnO 3 ferromagnetic material.

[0076] 2) Preparation of CaRu 0.5 Ti 0.5 o 3 Barrier material: CaO (99.99% pure), RuO 2 (99.95% pure), TiO 2 (purity 99.99%) powder according to CaRu 0.5 Ti 0.5 o 3 After mixing the chemical molar ratios of the elements Ca, Ru and Ti, they are uniforml...

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Abstract

The invention provides a magnetic multilayer film with antiferromagnetc interlayer coupling, and a production method thereof. The magnetic multilayer film with antiferromagnetc interlayer coupling, adopting CaRu0.5Ti0.5O3 as a barrier material and perovskite type transition metal oxide as a ferromagnetic material, can well epitaxially grow and realizes anti-parallel coupling among ferromagnetic layers under zero field. Compared with present spin valve type structures, the magnetic multilayer provided by the invention can realize parallel or anti-parallel arrangement between two ferromagnetic layers without pinning of the bottom anti-ferromagnetic layer, and is of great significance to simplify the structure of a tunnel junction; and overturning of the ferromagnetic layers in the multilayer film is very sensitive to change of the outer field, and the magnetization configuration among the ferromagnetic layers is sensitively controlled through the magnetic field, so application of the magnetic multilayer film in magnetic tunnel junctions is facilitated.

Description

technical field [0001] The invention relates to the field of magnetic materials, in particular to a magnetic multilayer film with antiferromagnetic interlayer coupling and a preparation method thereof. Background technique [0002] The interlayer exchange coupling phenomenon means that in a magnetic multilayer film, the magnetization of each magnetic layer can achieve parallel or antiparallel coupling according to the thickness of the intermediate layer material. In 1986, the French scientist Albert Fer and the German scientist Peter Greenberger successively observed the antiferromagnetic interlayer coupling behavior in Fe / Cr multilayer films, and found that the magnetization configuration of the system can be changed by using a magnetic field. It causes a significant change in resistance, the so-called giant magnetoresistance effect (GMR), which comes from the electron scattering related to spin at the interface, and has been widely used in the current hard disk reading and...

Claims

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Application Information

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IPC IPC(8): B32B9/00B32B37/24B32B38/00H01L45/00
CPCB32B9/00B32B37/24B32B38/00B32B2038/0048B32B2037/246H10N70/00
Inventor 吴文彬陈斌斌徐浩然
Owner UNIV OF SCI & TECH OF CHINA