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A magnetic multilayer film with antiferromagnetic interlayer coupling and its preparation method

An antiferromagnetic layer and multi-layer film technology, which is applied in the field of magnetic multi-layer films with anti-ferromagnetic interlayer coupling and its preparation, can solve the problems such as failure of breakthroughs in magnetic multi-layer films, and achieve simplified structure, Good effect of epitaxial growth

Active Publication Date: 2017-04-12
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, how to obtain a magnetic multilayer film based on transition metal oxides that can achieve antiferromagnetic interlayer coupling between ferromagnetic layers has not been a breakthrough.

Method used

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  • A magnetic multilayer film with antiferromagnetic interlayer coupling and its preparation method
  • A magnetic multilayer film with antiferromagnetic interlayer coupling and its preparation method
  • A magnetic multilayer film with antiferromagnetic interlayer coupling and its preparation method

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preparation example Construction

[0046] The present invention also provides a method for preparing a magnetic multilayer film with antiferromagnetic interlayer coupling, comprising:

[0047] sequentially depositing a barrier layer and a magnetic layer on the substrate, and repeatedly depositing the barrier layer and the magnetic layer to obtain a deposited magnetic multilayer film;

[0048] Wherein, the barrier material of the barrier layer is CaRu 0.5 Ti 0.5 o 3 ;

[0049] The number of layers of the barrier layer is N, N≥3;

[0050] The ferromagnetic material of the ferromagnetic layer is a perovskite transition metal oxide,

[0051] The number of layers of the magnetic layer is N-1;

[0052] The deposited magnetic multilayer film is annealed to obtain a magnetic multilayer film with antiferromagnetic interlayer coupling.

[0053] According to the present invention, a barrier layer and a magnetic layer are sequentially deposited on the substrate, and the barrier layer and the magnetic layer are deposi...

Embodiment 1

[0064] Preparation of [CaRu 0.5 Ti 0.5 o 3 (1.2nm) / La 0.67 Ca 0.33 MnO 3 (2.8nm)] 10 / CaRu 0.5 Ti 0.5 o 3 (1.2nm), that is, the magnetic multilayer film with N=11 antiferromagnetic interlayer coupling

[0065] 1) Preparation of La 0.67 Ca 0.33 MnO 3 Ferromagnetic material: CaO (99.99% pure), MnO 2 (purity ≥ 98.0%) and La 2 o 3 (purity 99.99%) powder according to La 0.67 Ca 0.33 MnO 3 The chemical molar ratio of Ca element, Mn element and La element is mixed, after grinding evenly, it is pre-fired three times at 1100°C, 1200°C, 1300°C respectively, each time for 12 hours, and then pressed under 40MPa pressure. Circular target, and calcined at 1350°C for 24 hours, sintered into La 0.67 Ca 0.33 MnO 3 target, ie La 0.67 Ca 0.33 MnO 3 ferromagnetic material.

[0066] 2) Preparation of CaRu 0.5 Ti 0.5 o 3 Barrier material: CaO (99.99% pure), RuO 2 (99.95% pure), TiO 2 (purity 99.99%) powder according to CaRu 0.5 Ti 0.5 o 3 After mixing the chemical mo...

Embodiment 2

[0074] Preparation of [CaRu 0.5 Ti 0.5 o 3 (1.2nm) / La 0.67 Ca 0.33 MnO 3 (2.8nm)] 2 / CaRu 0.5 Ti 0.5 o 3 (1.2nm), that is, the magnetic multilayer film with N=3 antiferromagnetic interlayer coupling

[0075] 1) Preparation of La 0.67 Ca 0.33 MnO 3 Ferromagnetic material: CaO (99.99% pure), MnO 2 (purity ≥ 98.0%) and La 2 o 3 (purity 99.99%) powder according to La 0.67 Ca 0.33 MnO 3 The chemical molar ratio of Ca element, Mn element and La element is mixed in the mixture. After uniform grinding, it is pre-fired three times at 1100°C, 1200°C, and 1300°C. Shaped target, and calcined at 1350 °C for 24 hours, sintered into La 0.67 Ca 0.33 MnO 3 target, ie La 0.67 Ca 0.33 MnO 3 ferromagnetic material.

[0076] 2) Preparation of CaRu 0.5 Ti 0.5 o 3 Barrier material: CaO (99.99% pure), RuO 2 (99.95% pure), TiO 2 (purity 99.99%) powder according to CaRu 0.5 Ti 0.5 o 3 After mixing the chemical molar ratios of the elements Ca, Ru and Ti, they are uniforml...

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Abstract

The invention provides a magnetic multilayer film with antiferromagnetic interlayer coupling and a preparation method thereof. The magnetic multilayer film with antiferromagnetic interlayer coupling provided by the invention uses CaRu0.5Ti0.5O3 as a barrier material , using perovskite-type transition metal oxides as ferromagnetic materials, the prepared magnetic multilayer film with antiferromagnetic interlayer coupling can not only be epitaxially grown well, but also can realize ferromagnetic interlayer under zero field. Compared with the current spin valve structure, the parallel or antiparallel arrangement between the two ferromagnetic layers can be realized without the pinning of the bottom antiferromagnetic layer, which is of great significance for simplifying the structure of the tunnel junction. ; and the reversal of the ferromagnetic layer in the multilayer film is very sensitive to the change of the external field, and the magnetization configuration between the ferromagnetic layers can be sensitively controlled by the magnetic field, which is beneficial to its application in the magnetic tunnel junction.

Description

technical field [0001] The invention relates to the field of magnetic materials, in particular to a magnetic multilayer film with antiferromagnetic interlayer coupling and a preparation method thereof. Background technique [0002] The interlayer exchange coupling phenomenon means that in a magnetic multilayer film, the magnetization of each magnetic layer can achieve parallel or antiparallel coupling according to the thickness of the intermediate layer material. In 1986, the French scientist Albert Fer and the German scientist Peter Greenberger successively observed the antiferromagnetic interlayer coupling behavior in Fe / Cr multilayer films, and found that the magnetization configuration of the system can be changed by using a magnetic field. It causes a significant change in resistance, the so-called giant magnetoresistance effect (GMR), which comes from the electron scattering related to spin at the interface, and has been widely used in the current hard disk reading and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B32B9/00B32B37/24B32B38/00H01L45/00
CPCB32B9/00B32B37/24B32B38/00B32B2038/0048B32B2037/246H10N70/00
Inventor 吴文彬陈斌斌徐浩然
Owner UNIV OF SCI & TECH OF CHINA