Silicon-based pressure sensor and manufacturing method thereof

Abstract

The invention relates to a silicon-based pressure sensor and a manufacturing method thereof. The sensor comprises a differential pressure sensitive device, a static pressure compensation unit and a packaging structure, wherein the differential pressure sensitive device employs a differential capacitor structure, the differential pressure sensitive device is characterized in by comprising an upper glass fixing pole board, a movable silicon sensitive chip pole board, a lower glass fixing pole board, a glass bottom board and a pressure guide tube from up to down through packaging; the static pressure compensation unit employs a silicon piezoresistive chip in an absolute packaging mode to measure static pressure magnitude and is characterized by employing a point type suspension mode to be fixed above the differential pressure sensitive device, signal drifting amount is small, space is saved, and the static pressure compensation unit and the differential pressure sensitive device form a compound stacked structure welded in the packaging structure in a suspension mode; the packaging structure comprises a sensor foundation, a pressure leading guide tube and a wire leading seat and is characterized by employing a suspension type structure, the compound differential and static pressure structure is packaged in the sensor foundation in a suspension mode, the wire leading seat is arranged at one end of the foundation, the pressure leading guide tube is arranged at the other end of the foundation, each part is welded on the sensor foundation through the improved welding technology.

Description

technical field [0001] The invention belongs to the technical field of sensors, and in particular relates to a silicon-based pressure sensor manufactured by adopting the fusion technology of microelectronics and micromachining and a manufacturing method thereof. Background technique [0002] With the rapid development of sensor technology, the application of silicon-based pressure sensors is becoming more and more extensive, and gradually develops in the direction of high precision, high stability, high reliability, networking, intelligence, and integration; among them, capacitive silicon-based pressure sensors The sensor is recognized as a new generation of silicon-based pressure sensor with broad development prospects for its outstanding technical advantages such as high precision, high stability, and high reliability, and is an indispensable key component in the field of automation control. The capacitive silicon-based pressure sensor uses the principle of capacitance to ...

AI Technical Summary

Problems solved by technology

However, due to the limitation and influence of factors such as the state of raw materials, process equipment conditions, and the perfection of processing technology, the main problems existing in the manufacturing process of existing silicon-based pressure sensors are low production yield and certain dispersion of static pressure errors. , Oil leakage from the welding joint of the packaging structure, these problems directly affect the performance, reliability and yield of the sensor, and play a restrictive role in the promotion and application of this silicon-based pressure sensor

Images