Structure for detecting light fault injection attacks in integrated circuit and detection method thereof

Abstract

The invention discloses a structure for detecting light fault injection attacks in an integrated circuit. An inverter structure is adopted; the inverter is composed of two PMOSs arranged at the upper part and connected in parallel and an NMOS arranged at the lower part. During detection, a plurality of inverters INV0D2_PRO are arranged at the unoccupied positions on the chip; the structures of the inverters INV0D2_PRO are the same as that for detecting the light fault injection attacks in the integrated circuit, designed in the invention; the outputs of the multiple inverters are interconnected according to the bus topology structure, and the output signals of the plurality of inverters are integrated; the integrated signals are collected and used as early warning signals, so that the detection on the light fault injection attacks in the integrated circuit is completed. The structure provided by the invention can make a response in time after an attack is detected, so that key data in the chip is prevented from being analyzed and stolen.

Description

technical field [0001] The present invention uses the basic unit in integrated circuit design—the inverter (Inverter), to improve it to make it more sensitive to the photo-generated current caused by optical fault injection, and uses the improved inverter as the basic unit of the detector network, Building a chip-level optical fault injection detector network structure can detect the occurrence of an optical fault injection attack in time and generate an early warning signal when an optical fault injection attack occurs. Background technique [0002] Entering the 21st century, with the continuous progress of information technology, informatization has become the development trend of the world today, and accelerating the development of the information industry has become an increasingly urgent need for people [1] ; At the same time, information security issues have also emerged. How to improve the level of information security and how to ensure the security of information sys...

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Problems solved by technology

Another possible scenario is that the transient voltage caused by laser fault injection is directly injected into the SRAM or memory, which will directly cause the memory state to flip, thereby generating errors

[0004] Photosensors such as photodiodes can convert light into electric current, but these structures are not suitable as light detectors in integrated circuits because they are larger than general standard cells and are easy for attackers to find and avoid during the actual attack , and because the photodiode is an analog device, it cannot be integrated into the digital circuit design flow

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