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Gallium nitride-based light-emitting diode chip and preparation method thereof

A light-emitting diode, gallium nitride-based technology, used in laser welding equipment, manufacturing tools, welding equipment, etc., can solve the problems of difficult to spontaneously eliminate, affect luminous efficiency, light absorption, etc., to improve the overall luminous efficiency and improve light output. Efficiency, increase the effect of side wall light

Active Publication Date: 2018-05-29
QUANZHOU SANAN SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, by-products such as burn marks and debris left after laser stealth cutting in this invention are located inside the device, and are not easy to be eliminated spontaneously, which will absorb light and affect the luminous efficiency. By-products such as chips are removed, the process is more cumbersome and the cost is higher

Method used

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  • Gallium nitride-based light-emitting diode chip and preparation method thereof
  • Gallium nitride-based light-emitting diode chip and preparation method thereof
  • Gallium nitride-based light-emitting diode chip and preparation method thereof

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Embodiment 1

[0026] This embodiment provides a method for manufacturing a gallium nitride light-emitting diode chip, the manufacturing steps of which include:

[0027] like figure 1 As shown, an N-GaN layer 102 , a light emitting layer 103 and a P-GaN layer 104 are epitaxially grown sequentially on a patterned sapphire substrate 101 by metal organic chemical vapor deposition (MOCVD).

[0028] like figure 2 As shown, the laser is scribed along the surface of the epitaxial layer, and the longitudinal linear cutting line B is formed in the direction perpendicular to the flat side, and the horizontal straight line cutting line A is formed in the direction parallel to the flat side, and the cutting lines A and B form a network structure cutting path.

[0029] like image 3 As shown, laser stealth dicing is used to focus at a position 10 μm to 40 μm inward from the back of the substrate, the laser energy is adjusted to 0.32W to 0.6W, the laser frequency is adjusted to 15KHz to 40KHz, and ...

Embodiment 2

[0033] like Figure 5 As shown, different from Embodiment 1, this embodiment has a distributed Bragg reflection layer 108 on the back of the substrate, so that the light extraction efficiency of the LED chip is further improved. It should be pointed out that the distributed Bragg reflection layer 108 can be prepared before the ablation hole is obtained by laser stealth dicing inside the substrate, or can be formed after the ablation hole is obtained by laser stealth dicing inside the substrate.

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Abstract

The invention provides a nitride-based light emitting diode chip and a manufacturing method thereof. Focusing at a position having a distance of 10mum-40mum to a back face of a substrate inwards is carried out, laser energy increases, laser frequency is adjusted, hidden laser cutting is realized in the substrate to form a hole through ablation penetrating through the back face of the exposed substrate, accessory substances such as burn marks and chippings generated during hidden laser cutting are effectively discharged, light absorption of the accessory substances can be reduced, light emission at side walls of the light emitting diode increases, and light emitting efficiency is improved, moreover, as the substrate and the hole have different refractive indexes, and laser scratch makes side faces of an LED chip coarsen similarly, a light removal angle is improved, increase of axial light is realized, and integral light emitting efficiency of the LED chip is improved.

Description

technical field [0001] The invention relates to the field of preparation of semiconductor devices, in particular to a gallium nitride-based light-emitting diode chip and a preparation method thereof. Background technique [0002] At present, gallium nitride-based light-emitting diode chips (Light Emitting Diode, referred to as LED in English) have excellent characteristics such as long life, impact resistance, shock resistance, high efficiency and energy saving, and are widely used in image display, signal indication, lighting and basic research. GaN-based LEDs have developed rapidly in recent years, but their luminous efficiency has always been the main bottleneck restricting the wide application of LEDs in the lighting field. For this reason, the research on improving LED luminous efficiency is relatively active. The main technologies include surface (interface) roughening technology, growth distribution Bragg reflective layer structure, transparent substrate technology, s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/78H01L21/268H01L33/00B23K26/36
CPCB23K26/361H01L21/268H01L21/78H01L33/0066H01L33/0075
Inventor 陈功林素慧张家宏彭康伟许圣贤刘传桂林潇雄
Owner QUANZHOU SANAN SEMICON TECH CO LTD