Quantum dot light-emitting layer, preparation method thereof and QLED

A quantum dot light-emitting and quantum dot technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of high QLED start-up voltage, poor charge transfer properties, and low QLED energy efficiency, and reduce the start-up voltage. , improve the transport properties, overcome the effect of poor charge transport properties

Inactive Publication Date: 2015-12-23
TCL CORPORATION
View PDF5 Cites 63 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a quantum dot luminescent layer, aiming at solving the problem that the quantum dot ligand in the existing quantum dot lum

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0018] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below with reference to the embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

[0019] The embodiment of the present invention provides a quantum dot light-emitting layer, the quantum dot light-emitting layer includes quantum dots and ligands chelated with the quantum dots, and the ligands are C2- C10 compound, the ligand has charge transport properties.

[0020] Specifically, in the embodiment of the present invention, the quantum dots, as the matrix component of the quantum dot light-emitting layer, may be colloidal quantum dots or nanorod quantum dots with a single distribution. The type of the quantum dots is not strictly limited, and can be II-VI compound sem...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the field of quantum dot light-emitting diodes and provides a quantum dot light-emitting layer, a preparation method thereof and a QLED. The quantum dot light-emitting layer comprises quantum dots and ligands chelated with the quantum dots. Each ligand comprises C2-C10 compounds containing polar coordinating groups and has the charge transmission property. The preparation method comprises the steps of providing a mixed solution of the quantum dots and the ligands having the charge transmission property, preparing a quantum dot solution containing the ligands having the charge transmission property, and forming a quantum dot light-emitting layer by utilizing the quantum dot solution in the deposition manner. Or, the method comprises the steps of respectively providing a ligand solution having the charge transmission property and the quantum dot light-emitting layer, subjecting the quantum dot light-emitting layer and the ligands having the charge transmission property to the replacement reaction, and obtaining a quantum dot light-emitting layer containing chelated ligands having the charge transmission property. The QLED comprises a cathode layer, an anode layer and an organic functional layer. The organic functional layer comprises the above quantum dot light-emitting layer.

Description

technical field [0001] The invention belongs to the field of quantum dot light-emitting diodes, and in particular relates to a quantum dot light-emitting layer, a preparation method thereof and a QLED. Background technique [0002] Quantum dots (quantumdot, QD), also known as semiconductor nanocrystals, are nanocrystalline particles with a radius smaller than or close to the radius of the Bohr excitons. The size is very small, and the particle size is generally between 1-20nm. Quantum dots have a quantum confinement effect, can emit fluorescence after being excited, and quantum dots have unique luminescence characteristics, such as wide excitation peak, narrow emission peak, and adjustable luminescence spectrum, making them widely used in the field of optoelectronics prospect. Quantum dot light-emitting diode display (quantum dot light emitting device, QLED) is a device prepared by using colloidal quantum dots as the light-emitting layer with a sandwich structure, that is, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K71/12H10K85/30H10K50/115
Inventor 李雪付东
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap